A method is provided for manufacturing a semiconductor structure. The method includes providing a through hole penetrating a stacked layer and exposing a surface of an interconnecting conductive layer; forming a side wall material layer covering at least a side wall and a bottom of the through hole; forming a protective material layer covering the side wall material layer; performing thermal processing on the protective material layer, to cause the protective material layer to implement a material phase change process; etching and removing materials located at the bottom of the through hole to expose the surface of the interconnecting conductive layer, covering the side wall of the through hole, of the side wall material layer as a side wall layer, and taking a remaining protective material layer covering the side wall layer as a protective layer. Working performance of the semiconductor structure is improved.