Provided is a semiconductor device including a substrate, a semiconductor chip on the substrate, and a bonding layer between the substrate and the semiconductor chip, wherein the bonding layer includes a transition metal, a low-melting-point metal having a melting point lower than a melting point of the transition metal, a noble metal, and an alloy thereof, and a percentage of the noble metal in the bonding layer is greater in a central portion of the bonding layer than at peripheral portions of the bonding layer in a first direction of the bonding layer.