Embodiments of deposition rings for use in a process chamber are provided herein. In some embodiments, a deposition ring includes: an annular body; an inner wall extending upward from an inner portion of the annular body; and an outer wall extending upward form an outer portion of the annular body to define a large deposition cavity between the inner wall and the outer wall, wherein a width of the large deposition cavity is about 0.35 inches to about 0.60 inches, wherein the outer wall includes an outer ledge and an inner ledge raised with respect to the outer ledge.

A substrate carrier for an epitaxy chamber is described that has an elongated base member supporting two substrate supports in an angled relationship and a center substrate support between the two substrate supports. The center substrate support has one or more openings at which a substrate is positioned for processing, enabling both sides of the substrate to be processed concurrently.

In a plasma processing apparatus according to an exemplary embodiment, a gas supply system supplies a gas into a processing container. A plasma source excites the gas supplied by the gas supply system. A support structure holds a processing target within the processing container. The support structure is configured to rotatably and tiltably support the processing target. The plasma processing apparatus further includes a bias power supply unit that applies a pulse-modulated DC voltage, as a bias voltage for ion attraction, to the support structure.

In a plasma processing apparatus according to an exemplary embodiment, a gas supply system supplies a gas into a processing container. A plasma source excites the gas supplied by the gas supply system. A support structure holds a processing target within the processing container. The support structure is configured to rotatably and tiltably support the processing target. The plasma processing apparatus further includes a bias power supply unit that applies a pulse-modulated DC voltage, as a bias voltage for ion attraction, to the support structure.

Sputtering systems and methods for packaging applications. In some embodiments, a method for processing a plurality of packaged devices can include forming or providing a first assembly having a stencil and a two-sided adhesive member attached to a first side of the stencil, with the stencil having a plurality of openings, and the two-sided adhesive member having a plurality of openings corresponding to the openings of the stencil. The method can further include attaching the first assembly to a ring to provide a second assembly, with the ring being dimensioned to facilitate a deposition process. The method can further include loading a plurality of packaged devices onto the second assembly such that each packaged device is held by the two-sided adhesive member of the first assembly and a portion of each packaged device extends into the corresponding opening of the two-sided adhesive member.

Sputtering systems and methods for packaging applications. In some embodiments, a method for processing a plurality of packaged devices can include forming or providing a first assembly having a stencil and a two-sided adhesive member attached to a first side of the stencil, with the stencil having a plurality of openings, and the two-sided adhesive member having a plurality of openings corresponding to the openings of the stencil. The method can further include attaching the first assembly to a ring to provide a second assembly, with the ring being dimensioned to facilitate a deposition process. The method can further include loading a plurality of packaged devices onto the second assembly such that each packaged device is held by the two-sided adhesive member of the first assembly and a portion of each packaged device extends into the corresponding opening of the two-sided adhesive member.

An etching chamber is equipped with an actively-cooled element preferentially adsorbs volatile compounds that are evolved from a polymeric layer of a wafer during etching, which compounds will act as contaminants if re-deposited on the wafer, for example on exposed metal contact portions where they may interfere with subsequent deposition of metal contact layers. In desirable embodiments, a getter sublimation pump is also provided in the etching chamber as a source of getter material. Methods of etching in such a chamber are also disclosed.

An etching chamber is equipped with an actively-cooled element preferentially adsorbs volatile compounds that are evolved from a polymeric layer of a wafer during etching, which compounds will act as contaminants if re-deposited on the wafer, for example on exposed metal contact portions where they may interfere with subsequent deposition of metal contact layers. In desirable embodiments, a getter sublimation pump is also provided in the etching chamber as a source of getter material. Methods of etching in such a chamber are also disclosed.

Methods and related apparatus support a work piece during a physical vapor deposition. An aluminium support having a support surface coated with a heat absorbent coating is provided. The support is cooled to around 100° C. and a PVD process is performed such that, with cooling, the work piece temperature is between 350° C. and 450° C. The coating is inert and/or ultra-high voltage compatible.

Methods and related apparatus support a work piece during a physical vapor deposition. An aluminium support having a support surface coated with a heat absorbent coating is provided. The support is cooled to around 100° C. and a PVD process is performed such that, with cooling, the work piece temperature is between 350° C. and 450° C. The coating is inert and/or ultra-high voltage compatible.