The present invention provides a non-cyanide based AuSn alloy plating solution capable of performing a AuSn alloy plating treatment by a plating solution composition that is neutral and does not contain cyanide. In the present invention, a non-cyanide soluble gold salt, a Sn compound composed of tetravalent Sn, and a thiocarboxylic acid-based compound are contained. The non-cyanide based AuSn alloy plating solution of the present invention can further contain sugar alcohols, and, in addition, can further contain a dithioalkyl compound.

A galvanic bath, containing: gold metal in the form of alkaline aurocyanide; organometallic components; a wetting agent; a complexing agent; free cyanide; copper metal in the form of copper II cyanide and potassium; and indium metal in the form of a complex indium metal, where the galvanic bath does not contain cadmium and zinc, and where the galvanic bath deposits a yellow gold alloy comprising gold, copper, and indium as main components.

A galvanic bath, containing: gold metal in the form of alkaline aurocyanide; organometallic components; a wetting agent; a complexing agent; free cyanide; copper metal in the form of copper II cyanide and potassium; and indium metal in the form of a complex indium metal, where the galvanic bath does not contain cadmium and zinc, and where the galvanic bath deposits a yellow gold alloy comprising gold, copper, and indium as main components.

A photovoltaic device, such as a solar cell, including a copper-containing-grid metallization structure that contains a metal phosphorus layer as a diffusion barrier is provided. The copper-containing-grid metallization structure includes, from bottom to top, an electroplated metal phosphorus layer that does not include copper or a copper alloy located within a grid pattern formed on a front side surface of a semiconductor substrate, and an electroplated copper-containing layer. A method of forming such a structure is also provided.

A photovoltaic device, such as a solar cell, including a copper-containing-grid metallization structure that contains a metal phosphorus layer as a diffusion barrier is provided. The copper-containing-grid metallization structure includes, from bottom to top, an electroplated metal phosphorus layer that does not include copper or a copper alloy located within a grid pattern formed on a front side surface of a semiconductor substrate, and an electroplated copper-containing layer. A method of forming such a structure is also provided.

Electrical contacts having good corrosion resistance. These contacts may include a set of three layers. The three layers may include a first or top layer and two layers below the top layer. The second or middle layer may be more electrochemically active than either the first layer or the third layer. The first layer may include cracks, pores, or other discontinuities. Corrosive substances may pass through these cracks, pores, and other discontinuities and corrode the second, more electrochemically active layer below the first layer. The cracks, pores, and other discontinuities may spread the corrosion homogenously and laterally across the surface of the contact, thereby protecting the remainder of the contact.

Superconformally filling a recessed feature includes: contacting the recessed feature with superconformal filling composition that includes: Au(SO.sub.3).sub.2.sup.3 anions; SO.sub.3.sup.2 anions; and Bi.sup.3+ cations; convectively transporting Au(SO.sub.3).sub.2.sup.3 and Bi.sup.3+ to the bottom member of the recessed feature; subjecting the recessed feature to an electrical current to superconformally deposit gold from the Au(SO.sub.3).sub.2.sup.3 on the bottom member relative to the sidewall and the field, the electrical current providing a cathodic voltage; and increasing the electrical current subjected to the field and the recessed feature to maintain the cathodic voltage between 0.85 V and 1.00 V relative to the SSE during superconformally depositing gold on the substrate to superconformally fill the recessed feature of the article with gold as a superconformal filling of gold, the superconformal filling being void-free and seam-free.

The invention relates to an electrolytic deposition in the form of a gold alloy with a thickness of between 1 and 800 microns and which includes copper. According to the invention, the deposition includes indium as the third main compound. The invention concerns the field of electroplating methods.

The invention relates to an electrolytic deposition in the form of a gold alloy with a thickness of between 1 and 800 microns and which includes copper. According to the invention, the deposition includes indium as the third main compound. The invention concerns the field of electroplating methods.

A method for the galvanoplastic deposition of a gold alloy on an electrode dipped into a bath including gold metal, organometallic compounds, a wetting agent, a sequestering agent and free cyanide, the alloy metals being copper metal and silver metal allowing a mirror-bright yellow gold alloy to be deposited on the electrode characterized in that the bath respects a proportion of 21.53% gold, 78.31% copper and 0.16% silver.