Disclosed is a plastic semiconductor material and a preparation method thereof. The semiconductor material comprises an argentite-based compound represented by the following formula (I): Ag.sub.2-δX.sub.δS.sub.1-ηY.sub.η(I), in which 0≤δ<0.5, 0≤η<0.5, X is at least one of Cu, Au, Fe, Co, Ni, Zn, Ti, or V, and Y is at least one of N, P, As, Sb, Se, Te, O, Br, Cl, I, or F. The material can withstand certain deformations, similar to organic materials, and has excellent semiconductor properties with adjustable electrical properties, thereby enabling the preparation of high-performance flexible semiconductor devices.

Set forth herein are garnet material compositions, e.g., lithium-stuffed garnets and lithium-stuffed garnets doped with alumina, which are suitable for use as electrolytes and catholytes in solid state battery applications. Also set forth herein are lithium-stuffed garnet thin films having fine grains therein. Disclosed herein are novel and inventive methods of making and using lithium-stuffed garnets as catholytes, electrolytes and/or anolytes for all solid state lithium rechargeable batteries. Also disclosed herein are novel electrochemical devices which incorporate these garnet catholytes, electrolytes and/or anolytes. Also set forth herein are methods for preparing novel structures, including dense thin (<50 um) free standing membranes of an ionically conducting material for use as a catholyte, electrolyte, and, or, anolyte, in an electrochemical device, a battery component (positive or negative electrode materials), or a complete solid state electrochemical energy storage device. Also, the methods set forth herein disclose novel sintering techniques, e.g., for heating and/or field assisted (FAST) sintering, for solid state energy storage devices and the components thereof.

A spark plug according to one embodiment of the present invention includes an insulator formed of an alumina-based sintered body, wherein the insulator contains 90 wt % or more of an aluminum component in terms of oxide, and wherein crystal grains of the insulator has an average grain size of 1.5 mm or smaller and a grain size standard deviation of 1.2 μm or smaller.

A nanoparticle containing monoclinic lutetium oxide. A method of: dispersing a lutetium salt solution in a stream of oxygen gas to form droplets, and combusting the droplets to form nanoparticles containing lutetium oxide. The combustion occurs at a temperature sufficient to form monoclinic lutetium oxide in the nanoparticles. An article containing lutetium oxide and having an average grain size of at most 10 microns.

Set forth herein are garnet material compositions, e.g., lithium-stuffed garnets and lithium-stuffed garnets doped with alumina, which are suitable for use as electrolytes and catholytes in solid state battery applications. Also set forth herein are lithium-stuffed garnet thin films having fine grains therein. Disclosed herein are novel and inventive methods of making and using lithium-stuffed garnets as catholytes, electrolytes and/or anolytes for all solid state lithium rechargeable batteries. Also disclosed herein are novel electrochemical devices which incorporate these garnet catholytes, electrolytes and/or anolytes. Also set forth herein are methods for preparing novel structures, including dense thin (<50 um) free standing membranes of an ionically conducting material for use as a catholyte, electrolyte, and, or, anolyte, in an electrochemical device, a battery component (positive or negative electrode materials), or a complete solid state electrochemical energy storage device. Also, the methods set forth herein disclose novel sintering techniques, e.g., for heating and/or field assisted (FAST) sintering, for solid state energy storage devices and the components thereof.

A silicon carbide-graphite composite is described, including (i) interior bulk graphite material and (ii) exterior silicon carbide matrix material, wherein the interior bulk graphite material and exterior silicon carbide matrix material inter-penetrate one another at an interfacial region therebetween, and wherein graphite is present in inclusions in the exterior silicon carbide matrix material. Such material may be formed by contacting a precursor graphite article with silicon monoxide (SiO) gas under chemical reaction conditions that are effective to convert an exterior portion of the precursor graphite article to a silicon carbide matrix material in which graphite is present in inclusions therein, and wherein the silicon carbide matrix material and interior bulk graphite material interpenetrate one another at an interfacial region therebetween. Such silicon carbide-graphite composite is usefully employed in applications such as implant hard masks in manufacturing solar cells or other optical, optoelectronic, photonic, semiconductor and microelectronic products, as well as in ion implantation system materials, components, and assemblies, such as beam line assemblies, beam steering lenses, ionization chamber liners, beam stops, and ion source chambers.

A shaped ceramic abrasive grain, in particular based on alpha-Al.sub.2O.sub.3, includes two substantially parallel base surfaces with a polygonal base shape, said surfaces being connected by means of at least one stand surface, which is arranged substantially perpendicularly to the base surfaces, in order to position the abrasive grain on an abrasive article underlay. The abrasive grain has at least one cutting element which is arranged substantially opposite the at least one stand surface, wherein the cutting element includes at least one facet which is oriented obliquely to the base surfaces. The disclosure additionally relates to an abrasive article with abrasive grain and to a method for producing such abrasive grain.

An Al.sub.2O.sub.3 sputtering target having a purity of 99.99 wt % or higher, a relative density of 85% or higher and 95% or less, a volume resistivity of 10×10.sup.14 Ω.Math.cm or less, and a dielectric tangent of 15×10.sup.−4 or more. An object of the present invention is to provide an Al.sub.2O.sub.3 sputtering target having favorable sputtering characteristics, and in particular an Al.sub.2O.sub.3 sputtering target and a production method thereof capable of increasing the deposition rate without having to increase the sputtering power.

A sintered body includes a solid solution containing cobalt and iron, with the balance being zirconia. The total content of cobalt in terms of CoO and iron in terms of Fe.sub.2O.sub.3 is more than 0.1 wt % and less than 3.0 wt %, and the proportion of cobalt regions larger than 5.5 μm.sup.2 in an elemental map obtained using an electron probe microanalyzer is 25% or less.

An oxide sintered body having metal elements composed of In, Ga, Zn and Sn and containing a hexagonal layered compound represented by InGaO.sub.3(ZnO).sub.m (m is an integer of 1 to 6). When ratios (atomic %) of contents of In, Zn and Sn to all metal elements excluding oxygen contained in the oxide sintered body are taken as [In], [Zn] and [Sn], respectively, the relations [Zn]≥40 atomic %, [In]≤15 atomic %, [Sn]≤4 atomic % are satisfied.