Patent classifications
G01J1/429
Methods, systems, and apparatuses for accurate measurement and real-time feedback of solar ultraviolet exposure
System and methods for accurate measurement and real-time feedback of solar ultraviolet exposure for management of ultraviolet dose. The systems can include a wearable device and a mobile device, the system performing accurate measurement of UV exposure.
OPTICAL RECEIVER, PORTABLE ELECTRONIC DEVICE, AND METHOD OF PRODUCING OPTICAL RECEIVER
Provided are an optical receiver that can realize a reduction in the variation of sensitivity in the ultraviolet light region and a reduction in noise in the visible light region and the infrared light region, a portable electronic device, and a method of producing an optical receiver. The first light-receiving device (PD1) and the second light-receiving device (PD2) of the optical receiver (1) are each constituted by forming a second conductivity-type N-type well layer (N_well) on a first conductivity-type P-type substrate (P_sub), forming a first conductivity-type P-type well layer (P_well) in the N-type well layer (N_well), and forming a second conductivity-type N-type diffusion layer (N) in the P-type well layer (P_well). The P-type substrate P_sub, the N-type well layer (N_well), and the P-type well layer (P_well) are electrically at the same potential or are short-circuited.
DISPLAY BRIGHTNESS UPDATING
Computing devices and methods for controlling light output of a display are disclosed. In one example, a default brightness setting is set to an indoor light output level. A UV light sensor is activated to detect UV radiation levels. Based on determining that one or more of the UV radiation levels exceed a UV threshold, the default brightness setting is updated to correspond to an outdoor light output level that is greater than the indoor light output level. Without using information from an ambient light sensor, the display is activated from a deactivated state to illuminate at the updated default brightness setting corresponding to the outdoor light output level.
METHOD FOR DETERMINING THE THICKNESS OF A CONTAMINATING LAYER AND/OR THE TYPE OF CONTAMINATING MATERIAL, OPTICAL ELEMENT AND EUV-LITHOGRAPHY SYSTEM
The invention relates to a method for determining the thickness of a contaminating layer and/or the type of a contaminating material on a surface (7) in an optical system, in particular on a surface (7) in an EUV lithography system, comprising: irradiating the surface (7) on which plasmonic nanoparticles (8a,b) are formed with measurement radiation (10), detecting the measurement radiation (10a) scattered at the plasmonic nanoparticles (8a,b), and determining the thickness of the contaminating layer and/or the type of the contaminating material on the basis of the detected measurement radiation (10a). The invention also relates to an optical element (1) for reflecting EUV radiation (4), and to an EUV lithography system.
UV dosimetry system with optimal sun exposure prediction
A UV exposure dosimetry system includes at least one UV sensor that accurately measures the UV irradiance intensity. The UV dosimetry system integrates the measured UV irradiance intensity over time to calculate the real-time UV dosage and the vitamin D production by taking into account factors comprising UV sensor location, body surface area, clothing coverage, and sunscreen usage. Based on the measurement, the system can predict the time remaining to skin burn and the time remaining to reach daily goal of vitamin D production. The system can also estimate UV intensity for a time in the future at a geographic location based on the forecast UV index data, and predict UV dose and vitamin D generation for the user corresponding to user defined scenarios. The UV dosimetry system supports multi-user control through an advanced and user friendly input and output interface.
Method and system for measuring radiation and temperature exposure of wafers along a fabrication process line
A measurement wafer device for measuring radiation intensity and temperature includes a wafer assembly including one or more cavities. The measurement wafer device further includes a detector assembly. The detector assembly is disposed within the one or more cavities of the wafer assembly. The detector assembly includes one or more light sensors. The detector assembly is further configured to perform a direct or indirect measurement of the intensity of ultraviolet light incident on a surface of the wafer assembly. The detector assembly is further configured to determine a temperature of one or more portions of the wafer assembly based on one or more characteristics of the one or more light sensors.
System and method of estimating spectral contributions in ambient light and correcting field of view errors
The present disclosure describes systems, methods, and devices for estimating spectral contributions in ambient light. The present disclosure also describes systems, methods, and devices for compensating for field of view errors resulting from the user, contextual structures (e.g., buildings, trees, fixtures, or geological formations), atmospheric effects (e.g., ozone coverage, smog, fog, haze, or clouds), device structures, and/or device orientation/tilt relative to a light source being measured (e.g., sun, indoor/outdoor light emitter, or an at least partially reflective surface). The present disclosure also describes systems, methods, and devices for estimating spectral contributions in light or color measurements and accounting for field of view errors to obtain a refined estimate.
UV radiometry instruments and methods
Instruments and methods are disclosed which measure absolute energy and irradiance of UV light sources. The response curves of exemplary optical stacks of the radiometry instruments are substantially rectangular with steep transitions at the cutoff frequencies. Angle of incidence (AOI) control in combination with one or more interference filters in the optical stack enable the full optical stack to produce repeatable and accurate measurements. Inverse response filters are disclosed for leveling optical stack response.
EXTREME ULTRAVIOLET LIGHT GENERATING SYSTEM, EXTREME ULTRAVIOLET LIGHT GENERATING METHOD, AND THOMSON SCATTERING MEASUREMENT SYSTEM
An extreme ultraviolet light generating system may include: a chamber; a target feeding unit configured to feed a target into the chamber; a drive laser unit configured to irradiate the target with a drive pulsed laser light beam to generate a plasma to thereby generate extreme ultraviolet light; a probe laser unit configured to irradiate the plasma with a probe pulsed laser light beam to thereby generate Thomson scattered light; a spectrometer configured to measure a spectrum waveform of an ionic term in the Thomson scattered light; and a wavelength filter disposed upstream of the spectrometer, and configured to suppress light with a predetermined wavelength from entering the spectrometer. The light with the predetermined wavelength may be part of light containing the Thomson scattered light, and the predetermined wavelength may be substantially same as a wavelength of the probe pulsed laser light beam.
BEAM DELIVERY SYSTEM AND CONTROL METHOD THEREFOR
A beam delivery system may include: beam adjusters configured to adjust a divergence angle of a pulse laser beam; a beam sampler configured to separate a part of the pulse laser beam outputted from a first beam adjuster provided at the most downstream among the beam adjusters to acquire a sample beam; a beam monitor configured to receive the sample beam and output a monitored diameter; and a beam delivery controller configured to control the beam adjusters based on the monitored diameter. The beam delivery controller may adjust each of beam adjusters other than the first beam adjuster selected one after another from the most upstream so that the monitored diameter at the beam monitor becomes a predetermined value specific to the beam adjuster, and adjust the first beam adjuster so that the pulse laser beam becomes focused at a position downstream of a target position.