An EUV lithographic structure and methods according to embodiments of the invention includes an EUV photosensitive resist layer disposed directly on an oxide hardmask layer, wherein the oxide hardmask layer is doped with dopant ions to form a doped oxide hardmask layer so as to improve adhesion between the EUV lithographic structure and the oxide hardmask. The EUV lithographic structure is free of a separate adhesion layer.

An EUV lithographic structure and methods according to embodiments of the invention includes an EUV photosensitive resist layer disposed directly on an oxide hardmask layer, wherein the oxide hardmask layer is doped with dopant ions to form a doped oxide hardmask layer so as to improve adhesion between the EUV lithographic structure and the oxide hardmask. The EUV lithographic structure is free of a separate adhesion layer.

A photoresist composition includes a photoresist polymer including a repeating unit to which a silicon-containing leaving group is combined, a photo-fluorine generator including a sulfonium fluoride, and a solvent.

An etch process that includes removing an oxide containing surface layer from a semiconductor surface to be etched by applying a hydrofluoric (HF) based chemistry, wherein the hydrofluoric (HF) based chemistry terminates the semiconductor surface to be etched with silicon-hydrogen bonds, and applying a vapor priming agent bearing chemical functionality based on the group consisting of alkynes, alcohols and a combination thereof to convert the silane terminated surface to a hydrophobic organic surface. The method continues with forming a photoresist layer on the hydrophobic organic surface; and patterning the photoresist layer. Thereafter, the patterned portions of the photoresist are developed to provide an etch mask. The portions of the semiconductor surface exposed by the etch mask are then etched.

The present invention provides a resist underlayer film-forming composition for lithography for forming a resist underlayer film that can be used as a hard mask with use of hydrolysis-condensation product of a hydrolyzable silane which also absorbs KrF laser. A resist underlayer film-forming composition for lithography comprising, as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable silane includes a hydrolyzable silane of Formula (1):

R.sup.1.sub.aR.sup.2.sub.bSi(R.sup.3).sub.4(a+b)Formula (1)

[where R.sup.1 is an organic group of Formula (2):

##STR00001##

and is bonded to a silicon atom through a SiC bond; R.sup.3 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3], and a ratio of sulfur atoms to silicon atoms is 7% by mole or more in the whole of the silane. A resist underlayer film obtained by applying the resist underlayer film-forming composition onto a semiconductor substrate and baking it.

An adhesion promoter as shown in Formula (I) and a photosensitive resin composition containing the adhesion promoter are disclosed: ##STR00001## where R.sub.1, R.sub.2 and R.sub.3 each refer to a hydrogen atom, an optionally substituted C.sub.1-C.sub.20 alkyl, an optionally substituted C.sub.2-C.sub.20 alkenyl, an optionally substituted C.sub.2-C.sub.20 alkynyl, an optionally substituted phenyl, or other optionally substituted carbon atom; A refers to an optionally substituted C.sub.1-C.sub.20 alkyl, an optionally substituted C.sub.2-C.sub.20 alkenyl, an optionally substituted C.sub.2-C.sub.20 alkynyl, an optionally substituted phenyl, or other an optionally substituted carbon atom substituents; and the carbon in the alkyl, the alkenyl, the alkynyl, the phenyl, or the carbon atom substituents is optionally substituted with one or more of N, O and S; and X refers to an optionally substituted aromatic heterocyclic group. The adhesion promoter and the photosensitive resin composition can be used for manufacturing a semiconductor integrated circuit (IC), a LED and a flat-panel display.

A fluid ejection head for a fluid jet ejection device and a method for improving adhesion between a nozzle plate and a flow feature layer of the ejection head. The fluid ejection head includes a silicon substrate containing at least one array of fluid ejectors deposited thereon. At least one fluid supply via is etched through the silicon substrate adjacent to the at array of fluid ejectors. A flow feature layer is attached to the silicon substrate. The flow feature layer contains at fluid chambers and fluid flow channels corresponding the array of fluid ejectors for ejecting fluid provide fluid from the at least one fluid supply via to fluid chambers. At least a portion of the flow feature layer comprises an attachment surface having improved surface adhesion characteristics, and a nozzle plate containing nozzle holes is laminated to the flow feature layer to provide the fluid ejection head.

The present invention is a thermosetting silicon-containing material containing one or more of a repeating unit shown by the following general formula (Sx-1), a repeating unit shown by the following general formula (Sx-2), and a partial structure shown by the following general formula (Sx-3): ##STR00001##
where R.sup.1 represents an iodine-containing organic group; and R.sup.2 and R.sup.3 are each independently identical to R.sup.1, a hydrogen atom, or a monovalent organic group having 1 to 30 carbon atoms. This provides: a thermosetting silicon-containing material used for forming a resist underlayer film which is capable of contributing to sensitivity enhancement of an upper layer resist while keeping LWR thereof from degrading; a composition for forming a silicon-containing resist underlayer film, the composition containing the thermosetting silicon-containing material; and a patterning process using the composition.

A method for fabricating a semiconductor device is described that includes forming a base layer over a top layer of a substrate, the base layer includes a silicon based dielectric having a thickness less than or equal to 5 nm and greater than or equal to 0.5 nm; forming a photoresist layer over the base layer, the photoresist including a first side and an opposite second side; exposing a first portion of the photoresist layer to a pattern of extreme ultraviolet (EUV) radiation from the first side; exposing a second portion of the photoresist layer with a pattern of electron flux from the second side, the electron flux being directed into the photoresist layer from the base layer in response to the EUV radiation; developing the exposed photoresist layer to form a patterned photoresist layer; and transferring the pattern of the patterned photoresist layer to the base layer and the top layer.

Disclosed is a fluorine-containing composition containing a fluorine-containing compound represented by general formula (1) and a fluorine-based solvent. ##STR00001##