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G
PHYSICS
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G11
INFORMATION STORAGE
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G11C
STATIC STORES
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16/00
Erasable programmable read-only memories
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G11C16/02
electrically programmable
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G11C16/06
Auxiliary circuits, e.g. for writing into memory
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G11C16/34
Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
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G11C16/3418
Disturbance prevention or evaluation; Refreshing of disturbed memory data
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G11C16/3427
Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
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