Patent classifications
G
PHYSICS
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G11
INFORMATION STORAGE
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G11C
STATIC STORES
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16/00
Erasable programmable read-only memories
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G11C16/02
electrically programmable
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G11C16/06
Auxiliary circuits, e.g. for writing into memory
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G11C16/34
Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
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G11C16/3436
Arrangements for verifying correct programming or erasure
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G11C16/3468
Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
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G11C16/3477
Circuits or methods to prevent overerasing of nonvolatile memory cells, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate erasing
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