Embodiments described herein relate to graded slope bottom reflective electrode layer structures for top-emitting organic light-emitting diode (OLED) display pixels. An EL device includes a pixel definition layer having a top surface, a bottom surface, and graded sidewalls interconnecting the top and bottom surfaces and a bottom reflective electrode layer disposed over the pixel definition layer. The bottom reflective electrode layer includes a planar electrode portion disposed over the bottom surface and a graded reflective portion disposed over the graded sidewalls, where the graded reflective portion has a concave profile. The EL device includes an organic layer disposed over the bottom reflective electrode layer and a top electrode disposed over the organic layer. Also described herein are methods for fabricating the EL device.

A display apparatus includes a substrate, a pixel layer arranged over the substrate and including a plurality of display elements, an encapsulation member sealing the pixel layer, and a refractive layer arranged on the encapsulation layer and including a first refractive layer and a second refractive layer. The first refractive layer includes openings that correspond to the plurality of display elements, and the second refractive layer includes high refractive particles. The second refractive layer includes a first layer and a second layer, the first layer includes the high refractive particles dispersed in a first concentration, and the second layer includes the high refractive particles dispersed in a second concentration different from the first concentration.

The present invention provides a QD material, a preparation method, and a semiconductor device. The QD material includes a number of N QD structural units arranged sequentially along a radial direction of the QD material, where N≥1. Each QD structural unit has a gradient alloy composition structure with an energy level width increasing along the radial direction from the center to the surface of the QD material. Moreover, the energy level widths of adjacent QD structural units are continuous. The present invention provides a QD material having a gradient alloy composition along the radial direction from the center to the surface. The disclosed QD material not only achieves higher QD light-emitting efficiency, but also meets the comprehensive requirements of semiconductor devices and corresponding display technologies on QD materials. Therefore, the disclosed QD material is a desired QD light-emitting material suitable for semiconductor devices and display technologies.

Display panel stack-up structures are described. In an embodiment, a display panel includes a substrate, a light source, and a multiple layer thin film encapsulation over the light source. In an embodiment, the display panel additionally includes an anti-reflection layer over the light source. In an embodiment, an incoherence layer is located within the thin film encapsulation.

This disclosure provides a perovskite light-emitting diode with an adjustable light field, including a glass layer, an anode, a hole transport layer, an emission layer, an electron transport layer and a cathode in sequence from top to bottom. The electron transport layer is provided with a periodic nano-grating structure.

A quantum dots light emitting diode is provided. The quantum dots light emitting diode includes a first electrode layer; an electron transport layer on the first electrode layer; and a quantum dots layer on a side of the electron transport layer away from the first electrode layer. The electron transport layer includes a gradient alloy composite sub-layer including an electron transport oxide material and an electron transport non-oxide chalcogen-containing material. The non-oxide chalcogen is selected from a group consisting of sulfide ion, selenium ion, and tellurium ion. The electron transport non-oxide chalcogen-containing material has a gradient distribution such that a content of the electron transport non-oxide chalcogen-containing material decreases along a direction from the quantum dots layer to the first electrode layer.

An electroluminescent device including an anode; a cathode; a light emitting layer disposed between the anode and the cathode; and an electron transport layer disposed between the light emitting layer and the cathode, wherein the light emitting layer includes a plurality of semiconductor nanoparticles, the electron transport layer includes zinc oxide nanoparticles including a Group IIA metal and an acid salt of an alkali metal that has an oxycarbonyl moiety, and the zinc oxide nanoparticles have an average size of less than or equal to about 20 nanometers (nm).

An information handling system display with zero bezel defines a perimeter with a square side of a cover glass having a curved interior surface and a gradient refractive index portion that focuses visual images from a folded display film to a flat upper surface of the cover glass. The folded display film provides a display image across a full length of the cover glass while fitting under the cover glass with the fold and presenting undistorted visual images through the lens focus provided by the gradient refractive index portion.

A light-emitting device including a first electrode; a second electrode facing the first electrode; and interlayer arranged between the first electrode and the second electrode and including an emission layer, wherein the emission layer includes a first emission layer and a second emission layer, the first emission layer includes a first dopant, wherein the second dopant is an electron-trapping dopant, and the second emission layer includes a third dopant and a fourth dopant, wherein the fourth dopant is a hole-trapping dopant.

Provided are a display panel and a manufacturing method therefor, and a display apparatus. The display panel includes a plurality of sub-pixels of at least two colors and further comprises: a base substrate; a first electrode on the base substrate; an electron transport layer at the side of the first electrode facing away from the base substrate; a quantum dot light-emitting layer at the side of the electron transport layer facing away from the base substrate; and a second electrode at the side of the quantum dot light-emitting layer facing away from the base substrate. Materials of the quantum dot light-emitting layer of the sub-pixels of different colors are different. The electron transport layer is of an alloy heterostructure at least composed of a metal oxide and a metal chalcogenide. Contents of the metal chalcogenide in the alloy heterostructure at positions of the sub-pixels of different colors are different.