The present invention provides a QD material, a preparation method, and a semiconductor device. The QD material includes at least one QD structural unit arranged sequentially along a radial direction of the QD material. Each QD structural unit has a gradient alloy composition structure with a changing energy level width along the radial direction or a homogeneous alloy composition structure with a constant energy level width along the radial direction. The disclosed QD material not only achieves higher light-emission efficiency of QD material, but also meets the comprehensive requirements of semiconductor devices and the corresponding display technologies on QD materials. Therefore, the disclosed QD material is a desired QD light-emitting material suitable for semiconductor devices and display technologies.

The present disclosure provides an OLED display device, a display panel and a manufacturing method of the OLED display device, and belongs to the field of display technology. The OLED display device includes a light-emitting layer, a material of the light-emitting layer includes a host light-emitting material and a carrier balance material doped in the host light-emitting material; and the carrier balance material is used for balancing an electron mobility and a hole mobility of the light-emitting layer.

A display panel includes: a plurality of light emitting units each having a light emitting side and a back side; a transparent substrate disposed over the light emitting side of the light emitting unit; a transparent film disposed over a side of the transparent substrate opposing the light emitting unit, wherein: the transparent film has an effective refractive index smaller than a refractive index of the transparent substrate; and the transparent film has a position-dependent refractive index progressively smaller along a light emitting direction from the light emitting unit

To provide a display device including a light emitting element layer including an anode electrode, a light emissive layer formed on the anode electrode, and a cathode electrode formed on the light emissive layer, and a bank formed on the lower electrode and having an opening, in which the lower electrode is partially exposed, wherein the light emissive layer includes a p-doped hole transport layer containing p-dopant, and the p-doped hole transport layer contains a larger amount of p-dopant in an area close to an end portion of the opening of the bank than the amount of p-dopant contained in other areas.

A vertical fin field effect transistor including a doped region in a substrate, wherein the doped region has the same crystal orientation as the substrate, a first portion of a vertical fin on the doped region, wherein the first portion of the vertical fin has the same crystal orientation as the substrate and a first portion width, a second portion of the vertical fin on the first portion of the vertical fin, wherein the second portion of the vertical fin has the same crystal orientation as the first portion of the vertical fin, and the second portion of the vertical fin has a second portion width less than the first portion width, a gate structure on the second portion of the vertical fin, and a source/drain region on the top of the second portion of the vertical fin.

A vertical fin field effect transistor including a doped region in a substrate, wherein the doped region has the same crystal orientation as the substrate, a first portion of a vertical fin on the doped region, wherein the first portion of the vertical fin has the same crystal orientation as the substrate and a first portion width, a second portion of the vertical fin on the first portion of the vertical fin, wherein the second portion of the vertical fin has the same crystal orientation as the first portion of the vertical fin, and the second portion of the vertical fin has a second portion width less than the first portion width, a gate structure on the second portion of the vertical fin, and a source/drain region on the top of the second portion of the vertical fin.

A display panel including a power supplying auxiliary electrode above the substrate in at least one gap among gaps between pixel electrodes in row and column directions, not in contact with the pixel electrodes, extending in the row and/or column direction. An intermediate layer is on or above light-emitting layers and the auxiliary electrode, and includes a fluoride of an alkali metal or an alkaline earth metal. A functional layer is on or above the intermediate layer, and includes an organic material that facilitates electron transport and/or facilitates electron injection and a rare earth metal dopant. A counter electrode is on or above the functional layer. Further, 1≤x≤3, 20≤y≤40, and y≥10x+10, where x is film thickness of the intermediate layer in nanometers, and y is percentage by weight of the rare earth metal dopant in the functional layer.

A vertical fin field effect transistor including a doped region in a substrate, wherein the doped region has the same crystal orientation as the substrate, a first portion of a vertical fin on the doped region, wherein the first portion of the vertical fin has the same crystal orientation as the substrate and a first portion width, a second portion of the vertical fin on the first portion of the vertical fin, wherein the second portion of the vertical fin has the same crystal orientation as the first portion of the vertical fin, and the second portion of the vertical fin has a second portion width less than the first portion width, a gate structure on the second portion of the vertical fin, and a source/drain region on the top of the second portion of the vertical fin.

The present disclosure provides a cover window structure, including a transparent substrate and a hard coating layer disposed on the transparent substrate, wherein a region near a contact surface between the transparent substrate and the hard coating layer forms a molecular exchange layer by a molecular exchange method, and a hardness of the molecular exchange layer is greater than a hardness of the transparent substrate and is less than a hardness of the hard coating layer. The present disclosure further provides an organic light-emitting diode (OLED) display device which includes the cover window structure of the present disclosure, and by using this cover window structure design, bending resistance of the cover window structure is effectively improved.

An organic light-emitting diode (OLED) structure includes a stack of OLED layers; a light extraction layer (LEL) comprising a UV-cured ink; and a UV blocking layer between the LEL and the stack of OLED layers.