A semiconductor device includes a die layer comprising a main surface. A plurality of first terminals are mounted on the main surface of the die layer, the first terminals forming a grid of unit cells with hexagon contours arranged side-by-side across the main surface of the die layer. A plurality of second terminals are mounted on the main surface of the die layer, each second terminal forming a hexagon contour arranged within a unit cell of a respective first terminal. A plurality of third terminals is mounted on the main surface of the die layer, each third terminal formed as a hexagon and arranged within the hexagon contour of a respective second terminal. At least two metallization layers are arranged over the plurality of first, second and third terminals and are configured to receive electrical currents from the plurality of first, second and third terminals.

Pursuant to some embodiments of the present invention, transistor devices are provided that include a semiconductor structure, a drain finger extending on the semiconductor structure in a first direction, and a drain interconnect extending in the first direction and configured to be coupled to a drain signal at an interior position of the drain interconnect, where the drain interconnect is connected to the drain finger at a position offset from the interior position of the drain interconnect.

Representative techniques and devices including process steps may be employed to mitigate the potential for delamination of bonded microelectronic substrates due to metal expansion at a bonding interface. For example, a through-silicon via (TSV) may be disposed through at least one of the microelectronic substrates. The TSV is exposed at the bonding interface of the substrate and functions as a contact surface for direct bonding.

According to an embodiment, provided is a semiconductor device includes a semiconductor layer; a first electrode; a second electrode; an electrode pad; a wiring layer electrically connected to the gate electrode; a first polycrystalline silicon layer electrically connected to the electrode pad and the wiring layer; and an insulating layer provided between the first polycrystalline silicon layer and the electrode pad and between the first polycrystalline silicon layer and the wiring layer and having a first opening and a second opening. The electrode pad and the first polycrystalline silicon layer are electrically connected via an inside of the first opening. The wiring layer and the first polycrystalline silicon layer are electrically connected via an inside of the second opening, A first opening area of the first opening is larger than a second opening area of the second opening.

According to one embodiment, a semiconductor device includes a first electrode, a first region, and a first insulating layer. The first electrode includes a first electrode portion. The first region contains Ga and N. The first region includes a first subregion, a second subregion, and a third subregion. The first subregion and the third subregion contain at least one first element selected from the group consisting of Ar, B, P, N, and Fe. The first subregion is located between the first electrode portion and the second subregion in a first direction. The second subregion does not contain the first element, or concentration of the first element in the second subregion is lower than concentration of the first element in the first subregion and lower than concentration of the first element in the third subregion. The first insulating layer is provided between the first electrode and the first region.

An ohmic contact includes a first semiconductor layer a second semiconductor layer, and a heterointerface between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer has a two-dimensional electron sheet region in which a two-dimensional electron sheet is formed. The ohmic contact further includes a metal terminal covering the first semiconductor layer and filling a plurality of direct access pathways that provide direct lateral contact with the two-dimensional electron sheet region. The semiconductor device is fabricated by providing the semiconductor layers, etching the direct access pathways, and depositing metal material to fill the direct access pathways and cover the semiconductor layers. The ohmic contact may be part of a high-electron-mobility transistor that achieves low contact resistance with either no annealing at all (as-deposited metal), or at an anneal temperature that is much lower than industry-standard anneal temperatures to achieve sufficiently low contact resistance.

A semiconductor device according to the present embodiment comprises a first metallic line. The first metallic line is provided above a substrate and extends in a first direction with a first width. At least one second metallic line is connected to the first metallic line and extends in a second direction from the first metallic line with a second width that is smaller than the first width. A dummy metallic line is arranged adjacently to the at least one second metallic line, connected to the first metallic line, and extends in the second direction from the first metallic line. The dummy metallic line is not electrically connected to lines other than the first metallic line.

There is provided a field-effect transistor including: a gate electrode; a semiconductor layer having a source region and a drain region with the gate electrode in between; contact plugs provided on the source region and the drain region; first metals stacked on the contact plugs; and a low-dielectric constant region provided in a region between the first metals along an in-plane direction of the semiconductor layer and provided at least in a first region below bottom surfaces of the first metals along a stacking direction.

A semiconductor device includes an active layer having an active region, a source electrode, a drain electrode, a gate electrode, a source metal layer, a drain metal layer, and a source pad. The source metal layer and the drain metal layer are electrically connected to the source electrode and the drain electrode, respectively. An orthogonal projection of the drain metal layer on the active layer each forms a drain metal layer region. The source pad is electrically connected to the source metal layer. An orthogonal projection of the source pad on the active layer forms a source pad region overlapping the drain metal layer. An area of an overlapping region between the source pad region and the drain metal layer region is smaller than or equal to 40% of an area of the drain metal layer region.

According to one embodiment, a semiconductor device includes: a semiconductor layer including a first plane extending along a plane including a first axis and a second axis; a first electrode extending along the first axis; a second electrode extending along the second axis; and a third electrode above the first plane. The third electrode is electrically coupled to the first electrode and the second electrode, and includes a first portion, a second portion and a third portion. The first portion crosses the first electrode. The second portion crosses the second electrode. The third portion crosses the second electrode and is separate at a first end from the second portion.