RF transistor amplifiers include a Group III nitride-based RF transistor amplifier die that includes a semiconductor layer structure, a conductive source via that is connected to a source region of the Group III nitride-based RF transistor amplifier die, the conductive source via extending through the semiconductor layer structure, and an additional conductive via that extends through the semiconductor layer structure. A first end of the additional conductive via is connected to a first external circuit and a second end of the additional conductive via that is opposite the first end is connected to a first matching circuit.

A chip package structure is provided. The chip package structure includes a first substrate. The chip package structure includes a conductive via structure passing through the first substrate. The chip package structure includes a barrier layer over a surface of the first substrate. The chip package structure includes an insulating layer over the barrier layer. The chip package structure includes a conductive pad over the insulating layer. The conductive pad has a first portion passing through the insulating layer and the barrier layer and connected to the conductive via structure. The chip package structure includes a conductive bump over the conductive pad. The chip package structure includes a second substrate. The chip package structure includes an underfill layer between the first substrate and the second substrate.

Representative techniques and devices including process steps may be employed to mitigate the potential for delamination of bonded microelectronic substrates due to metal expansion at a bonding interface. For example, a through-silicon via (TSV) may be disposed through at least one of the microelectronic substrates. The TSV is exposed at the bonding interface of the substrate and functions as a contact surface for direct bonding.

A package includes a circuit that includes at least one active area and at least one secondary device area, a support configured to support the circuit, and a die attach material. The circuit being mounted on the support using the die attach material and the die attach material including at least one channel configured to allow gases generated during curing of the die attach material to be released from the die attach material.

Embodiments relate to the field of semiconductor, and disclose a semiconductor device layout structure, a method for forming the same, and a test system. The semiconductor device layout structure includes: an active layout layer including active pattern regions arranged along a first direction; device layout sublayers, where each of the device layout sublayer includes a gate pattern region; and a plurality of contact plug sets, where each of the contact plug sets includes a source contact plug and a drain contact plug. Along the first direction, in adjacent two gate pattern regions of the device layout sublayers, a pitch between the latter gate pattern region and the corresponding source contact plug and/or the drain contact plug and a pitch between the former gate pattern region and the corresponding source contact plug and/or the drain contact plug form an arithmetic progression.

An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal and having a first main surface as a device surface, a second main surface at a side opposite to the first main surface, and a side surface connecting the first main surface and the second main surface, a main surface insulating layer including an insulating material, covering the first main surface of the SiC semiconductor layer, and having an insulating side surface continuous to the side surface of the SiC semiconductor layer, and a boundary modified layer including a first region that is modified to be of a property differing from the SiC monocrystal and a second region that is modified to be of a property differing from the insulating material, and being formed across the side surface of the SiC semiconductor layer and the insulating side surface of the main surface insulating layer.

A semiconductor device includes a nitride-based transistor, a first metal layer, a second metal layer, a third metal layer, a source pad, and a drain pad. The first metal layer is disposed over the nitride-based transistor. The second metal layer is disposed over the first metal layer. The third metal layer is disposed over the second metal layer and includes a first pattern and a second pattern which are spaced apart from each other. The source pad is immediately above the first metal layer, the second metal layer, and the first pattern of the third metal layer and is electrically coupled with the nitride-based transistor. The drain pad is immediately above the first metal layer, the second metal layer, and the second pattern of the third metal layer and is electrically coupled with the nitride-based transistor.

A semiconductor device includes a substrate, a body structure and an electronic component. The body structure is disposed above the substrate and includes a semiconductor die, a molding compound, a conductive component and a lower redistribution layer (RDL). The semiconductor die has an active surface. The molding compound encapsulates the semiconductor die and has a lower surface, an upper surface opposite to the lower surface and a through hole extending to the upper surface from the lower surface. The conductive component is formed within the through hole. The lower RDL is formed on the lower surface of the molding compound, the active surface of the semiconductor die and the conductive component exposed from the lower surface. The electronic component is disposed above the upper surface of the molding compound and electrically connected to the lower RDL through the conductive component.

A semiconductor device has a first wiring extending in a first direction on a nitride semiconductor layer. A source electrode is electrically connected to the first wiring and extends in a second direction. A drain electrode extends in the second direction and includes a first and second portion extending in the second direction, spaced from each other in the first direction. An element isolation region is in the second nitride semiconductor layer between the first and second portions. A third portion extends in the second direction on the first and second portions. A gate electrode extends in the second direction on the second nitride semiconductor layer between the source electrode and the drain electrode. The portion includes holes therein aligned with each other along the second direction with the spacing between adjacent holes in the second direction increasing with increasing distance in the second direction from the first wiring.

According to one embodiment, a semiconductor device includes: a semiconductor layer including a first plane extending along a plane including a first axis and a second axis; a first electrode extending along the first axis; a second electrode extending along the second axis; and a third electrode above the first plane. The third electrode is electrically coupled to the first electrode and the second electrode, and includes a first portion, a second portion and a third portion. The first portion crosses the first electrode. The second portion crosses the second electrode. The third portion crosses the second electrode and is separate at a first end from the second portion.