A semiconductor package includes a semiconductor chip formed with a non-volatile semiconductor memory, a resin encapsulation that encapsulates the semiconductor chip, electrodes in a lattice (solder balls) formed and arrayed in a lattice on a bottom surface of the resin encapsulation. The solder balls include a signal electrode formed within the central region of the array and a dummy electrode formed outside the signal electrode.

A redistribution layer for an integrated circuit is made by forming a conductive interconnection layer; forming a conductive body in electrical contract with the interconnection layer; and covering the conductive body with a first coating layer having a thickness less than 100 nm. The first coating layer is configured to provide a protection against oxidation and/or corrosion of the conductive body. To carry out an electrical test of the integrated circuit, a testing probe locally perforates the first coating layer until the conductive body is electrically contacted by the testing probe.

A package comprising a substrate and an integrated device coupled to the substrate through a plurality of pillar interconnects and a plurality of solder interconnects. The plurality of pillar interconnects includes a first pillar interconnect comprising a first cavity. The plurality of solder interconnects comprises a first solder interconnect located in the first cavity of the first pillar interconnect. A planar cross section that extends through the first cavity of the first pillar interconnect may comprise an O shape. The first pillar interconnect comprises a first pillar interconnect portion comprising a first width; and a second pillar interconnect portion comprising a second width that is different than the first width.

A package comprising a substrate and an integrated device coupled to the substrate through a plurality of pillar interconnects and a plurality of solder interconnects. The plurality of pillar interconnects includes a first pillar interconnect comprising a first cavity. The plurality of solder interconnects comprises a first solder interconnect located in the first cavity of the first pillar interconnect. A planar cross section that extends through the first cavity of the first pillar interconnect may comprise an O shape. The first pillar interconnect comprises a first pillar interconnect portion comprising a first width; and a second pillar interconnect portion comprising a second width that is different than the first width.

A method of manufacturing an integrated electronic device including a semiconductor body and a passivation structure including a frontal dielectric layer bounded by a frontal surface. A hole is formed extending into the frontal surface and through the frontal dielectric layer. A conductive region is formed in the hole. A barrier layer is formed in the hole and extends into the hole. A first coating layer covers a top and sides of a redistribution region of the conductive region and a second coating layer covers is formed covering the first coating layer. A capillary opening is formed extending into the first and second coating layers to the barrier layer. A cavity is formed between the redistribution region and the frontal surface and is bounded on one side by the first coating layer and on the other by the barrier structure by passing an aqueous solution through the capillary opening.

Semiconductor packages with pass-through clock traces and associated devices, systems, and methods are disclosed herein. In one embodiment, a semiconductor device includes a package substrate including a first surface having a plurality of substrate contacts, a first semiconductor die having a lower surface attached to the first surface of the package substrate, and a second semiconductor die stacked on top of the first semiconductor die. The first semiconductor die includes an upper surface including a first conductive contact, and the second semiconductor die includes a second conductive contact. A first electrical connector electrically couples a first one of the plurality of substrate contacts to the first and second conductive contacts, and a second electrical connector electrically couples a second one of the plurality of substrate contacts to the first and second conductive contacts.

A semiconductor structure includes a first interposer; a second interposer laterally adjacent to the first interposer, where the second interposer is spaced apart from the first interposer; and a first die attached to a first side of the first interposer and attached to a first side of the second interposer, where the first side of the first interposer and the first side of the second interposer face the first die.

A method includes forming a plurality of dielectric layers, which processes include forming a first plurality of dielectric layers having first thicknesses, and forming a second plurality of dielectric layers having second thicknesses smaller than the first thicknesses. The first plurality of dielectric layers and the second plurality of dielectric layers are laid out alternatingly. The method further includes forming a plurality of redistribution lines connected to form a conductive path, which processes include forming a first plurality of redistribution lines, each being in one of the first plurality of dielectric layers, and forming a second plurality of redistribution lines, each being in one of the second plurality of dielectric layers.

Disclosed is a method for manufacturing a flip chip, in which a gold typically used in a flip chip manufacturing is adhered by conductive adhesives, wherein the method comprises steps of depositing a metal seed layer on a substrate; applying and patterning a photoresist or a dry film; forming a gold bump by electroplating; patterning the seed layer; forming an insulating layer on the seed layer and upper end of the gold bump; and patterning an insulating layer. Accordingly, it is possible to manufacture a flip chip, in which electrical function between bumps can be evaluated, with less cost.

Disclosed is a method for manufacturing a flip chip, in which a gold typically used in a flip chip manufacturing is adhered by conductive adhesives, wherein the method comprises steps of depositing a metal seed layer on a substrate; applying and patterning a photoresist or a dry film; forming a gold bump by electroplating; patterning the seed layer; forming an insulating layer on the seed layer and upper end of the gold bump; and patterning an insulating layer. Accordingly, it is possible to manufacture a flip chip, in which electrical function between bumps can be evaluated, with less cost.