A class D amplifier output stage including an input for receiving an input signal, an output for providing an output signal to a load, serially coupled upper and lower switching devices configured to provide an output signal to the output, a driver circuit configured to receive the input signal, and to derive therefrom first and second drive signals for driving the upper and lower switching devices alternately from a conducting state into a non-conducting state and vice versa, such that the conducting state periods of the upper switching device with respect to those of the lower switching device are mutually exclusive and separated by dead time intervals during which both upper and lower output transistors are non-conducting. To reduce distortion and more particularly, total harmonic distortion (THD), the amplifier output stage includes a substantially linear circuit configured to provide a bidirectional current sink for residual currents from the load occurring during at least part of each dead time interval.

A tunable matching circuit for use with ultra-low power RF receivers is described to support a variety of RF communication bands. A switched-capacitor array and a switched-resistor array are used to adjust the input impedance presented by the operating characteristics of transistors in an ultra-low-power mode. An RF sensor may be used to monitor performance of the tunable matching circuit and thereby determine optimal setting of the digital control word that drives the switched-capacitor array and switched-resistor array. An effective match over a significant bandwidth is achievable. The optimal matching configuration may be updated at any time to adjust to changing operating conditions. Memory may be used to store the optimal matching configurations of the switched capacitor array and switched resistor array.

A transmitter according to the present invention includes: a baseband amplitude value distribution processor (90) for changing a distribution of an amplitude value of a baseband signal based on a control signal that has been input and outputting the baseband signal as an output signal; a digital transmitter (91) that ΔΣ modulates the output signal and transmits the modulated signal; an in-band distortion measurement unit (92) for measuring an in-band distortion amount of the output signal; an amplitude value distribution measurement unit (93) for calculating an amplitude value distribution of the output signal; a sideband distortion prediction unit (94) for predicting a sideband distortion amount occurring in the output signal by the digital transmitter (91) from the calculated amplitude value distribution; and a baseband processing controller (95) for adjusting the control signal based on the measured in-band distortion amount and the sideband distortion amount and outputting the adjusted signal.

The disclosure relates to a pre-5th-generation (5G) or 5G communication system to be provided for supporting higher data rates beyond 4th-generation (4G) communication system such as long term evolution (LTE). An operation method of a device for upconversion in a wireless communication system is provided. The method includes receiving a first local oscillator (LO) signal, generating a second LO signal, based on the first LO signal and cross-coupled latches, receiving an input signal, generating an upconverted frequency, based on the second LO signal and the input signal, generating an output signal obtained by processing a harmonic component included in the upconverted frequency, and transmitting the generated output signal.

One or more embodiments relate to a multi-bias mode current conveyor. Such a current conveyor may include an input terminal, a reference terminal, an output terminal, a first and second cascoded current mirrors, and a biasing circuit. The first cascoded current mirror and a second cascoded current mirror may be arranged as a current conveyor that is configured to provide an output current that a mirror of an input current. The biasing circuit may be configured to provide a bias voltage selectively exhibiting a first voltage level or a second voltage level. The bias voltage may be provided at least partially responsive to a state of the input current. The biasing circuit may be arranged to apply the bias voltage to at least one of the first cascoded current mirror or the second cascoded current mirror.

The invention relates to a class AB amplifier for receiving an input current and generating an amplified output current and having first and second output transistors connected to provide the output current, wherein if the input current is less than a threshold the first output transistor is enabled and the second output transistor is disabled, and if the input current exceeds a threshold the second output transistor is enabled.

Embodiments relate to systems, methods and computer-readable media to enable design and creation of receiver circuitry. One embodiment is a receiver apparatus comprising a first resistor connected to a first receiver input, four N-type metal oxide semiconductor (NMOS) field effect transistors (FETs), two PMOS FETS, and a trans-impedance amplifier wherein an input terminal of the trans-impedance amplifier is connected to a drain terminal of the second NMOS FET. Additional embodiments including other circuitry, associated methods, and media comprising instructions associated with generation of circuit design files are also described.

There are disclosed various methods and apparatuses. In some embodiments of the method an input signal is provided to an input of a first transistor of a push-pull circuit via a first slew-rate adjuster; and the input signal is also provided to an input of a second transistor of the push-pull circuit via a second slew-rate adjuster. The input signal is effected by the first slew-rate adjuster and the second slew-rate adjuster to switch the first transistor on after the second transistor switches off when the amplitude of the input signal increases. The input signal is effected by the first slew-rate adjuster and the second slew-rate adjuster the input signal to switch the second transistor on after the first transistor switches off when the amplitude of the input signal decreases. In some embodiments the apparatus comprises a push-pull circuit comprising a first transistor and a second transistor; an input to receive an input signal; a first slew-rate adjuster adapted to provide the input signal to the input of the first transistor; and a second slew-rate adjuster adapted to provide the input signal to the input of the second transistor. A time constant of the first slew-rate adjuster is dependent on the direction of change of the input signal, and a time constant of the second slew-rate adjuster is dependent on the direction of change of the input signal.

An input receiver includes a first current source circuit, a second current source circuit, a first rail-to-rail amplifier circuit, a first inverter circuit, and a second inverter circuit. The first current source circuit adjusts an operating current flowing through a first node according to a first bias signal. The second current source circuit adjusts a ground current flowing through a second node according to a second bias signal. The first rail-to-rail amplifier circuit and the first inverter circuit are connected in parallel between the first node and the second node. The first rail-to-rail amplifier circuit receives an input signal and compares the input signal with a reference voltage and accordingly outputs an amplified signal. The second inverter circuit is coupled between an operating voltage and a ground voltage. The second inverter circuit generates an output signal according to an inverted signal outputted by the first inverter circuit.

The present invention includes a current integrator for an organic light-emitting diode (OLED) panel. The current integrator includes an operational amplifier, which includes an output stage. The output stage, coupled to an output terminal of the current integrator, includes a first output transistor, a second output transistor, a first stack transistor and a second stack transistor. The first stack transistor is coupled between the first output transistor and the output terminal. The second stack transistor is coupled between the second output transistor and the output terminal.