A method of fabricating a configurable single crystal acoustic resonator (SCAR) device integrated circuit. The method includes providing a bulk substrate structure having first and second recessed regions with a support member disposed in between. A thickness of single crystal piezo material is formed overlying the bulk substrate with an exposed backside region configured with the first recessed region and a contact region configured with the second recessed region. A first electrode with a first terminal is formed overlying an upper portion of the piezo material, while a second electrode with a second terminal is formed overlying a lower portion of the piezo material. An acoustic reflector structure and a dielectric layer are formed overlying the resulting bulk structure. The resulting device includes a plurality of single crystal acoustic resonator devices, numbered from (R1) to (RN), where N is an integer greater than 1.

A method of manufacturing an integrated circuit. This method includes forming an epitaxial material comprising single crystal piezo material overlying a surface region of a substrate to a desired thickness and forming a trench region to form an exposed portion of the surface region through a pattern provided in the epitaxial material. Also, the method includes forming a topside landing pad metal and a first electrode member overlying a portion of the epitaxial material and a second electrode member overlying the topside landing pad metal. Furthermore, the method can include processing the backside of the substrate to form a backside trench region exposing a backside of the epitaxial material and the landing pad metal and forming a backside resonator metal material overlying the backside of the epitaxial material to couple to the second electrode member overlying the topside landing pad metal.

A thin-film bulk acoustic resonator, a semiconductor apparatus including the acoustic resonator and its manufacturing method are presented. The thin-film bulk acoustic resonator includes a lower dielectric layer, a first cavity inside the lower dielectric layer, an upper dielectric layer, a second cavity inside the upper dielectric layer, and a piezoelectric film that is located between the first and second cavities and continuously separates these two cavities. The plan views of the first and the second cavities have an overlapped region, which is a polygon that does not have any parallel sides. The piezoelectric film of this inventive concept is a continuous film without any through-hole in it, therefore it can offer improved acoustic resonance performance.

This present disclosure provides a bulk acoustic wave resonator and a bulk acoustic wave filter, and relates to the technical field of filters. A substrate and a piezoelectric stack structure arranged on the substrate are included. The piezoelectric stack structure includes a bottom electrode, a piezoelectric material layer and a top electrode which are sequentially stacked, and an outline of an orthographic projection of the top electrode on the substrate includes at least one Bezier curve of order greater than or equal to 2. Accordingly, a length of a transverse propagation path of transverse acoustic waves can be increased, thereby increasing losses of the transverse acoustic waves during propagation, and reducing influences of the transverse acoustic waves on a transverse parasitic mode caused by the bulk acoustic wave resonator, and namely, an effect of restraining the transverse parasitic mode is improved by the bulk acoustic wave resonator, thereby improving performance of the bulk acoustic wave filter.

An acoustic wave device includes a substrate, lower and upper electrodes provided over the substrate, a piezoelectric film that is provided over the substrate, is interposed between the lower and upper electrodes, and has a pair of through holes that sandwich a resonance region therebetween in a first direction, are provided along the resonance region, and are connected to an air gap that is formed between the substrate and the lower electrode and overlaps the resonance region in the plan view, the lower and upper electrodes overlapping across the piezoelectric film in the resonance region, and additional films that are not provided in a central region of the resonance region in the plan view and are provided in respective edge regions, which are located on respective sides of the central region in a second direction substantially orthogonal to the first direction in the plan view, of the resonance region.

Acoustic resonators, filters, and methods. An acoustic resonator includes a substrate, a piezoelectric plate, and a diaphragm including a portion of the piezoelectric plate spanning a cavity in a substrate. An interdigital transducer (IDT) on a front surface of the piezoelectric plate includes first and second sets of interleaved interdigital transducer (IDT) fingers extending from first and second busbars respectively. The interleaved IDT fingers extend onto the diaphragm. Overlapping portions of the interleaved IDT fingers define an aperture of the acoustic resonator. First and second dielectric strips are on the front surface of the piezoelectric plate. Each dielectric strip has a first portion under the IDT fingers in a respective margin of the aperture and a second portion extending into a gap between the respective margin and the respective busbar.

An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

A process for fabricating a transversely-excited film bulk acoustic resonator (XBAR) having a metal cavity, and the fabricated XBAR include forming a conductor pattern including interleaved interdigital transducer (IDT) fingers on a piezoelectric wafer. Thein forming a metal layer on a substrate, the metal layer having a cavity. Then, bonding the piezoelectric plate to the metal layer using a metal-to-metal bond such that the IDT fingers are disposed over the cavity. Then, thinning the piezoelectric wafer to form a piezoelectric plate having a portion of the piezoelectric plate forming a diaphragm that spans the cavity.

Acoustic resonator devices and methods are disclosed. An acoustic resonator device includes a substrate having a front surface and a cavity. A depth of the cavity is defined by a buried oxide layer comprising etch-stop material and a perimeter of the cavity is defined by lateral fences comprising etch-stop material. A back surface of a single-crystal piezoelectric plate is attached to the front surface of the substrate except for a portion of the piezoelectric plate that forms a diaphragm that spans the cavity. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm.

An acoustic resonator that has a first electrode with a first planar portion. A second electrode having a second planar portion is disposed parallel to the first planar portion. This second electrode has a bifurcated end that defines a gap. A piezoelectric layer is disposed between and contacts both the first planar portion and the second planar portion. Also contacting the piezoelectric layer is the bifurcated end of the second electrode. The gap is formed in the periphery of each resonator within a filter. It is formed in the top electrode, that is typically formed of molybdenum, but could be formed from other metals as well. Unlike a gap between a top electrode and piezoelectric material, the gap recited herein is entirely within the second electrode. This structure is compatible with an inner passivation layer that enables a single crystal piezoelectric layer and a larger bottom electrode.