An optical sensor device, a method for fabricating the same, and a display device are disclosed. The optical sensor device includes a display region and a non-display region. In the display non-display region, the optical sensor device includes a thin film transistor, including an active layer, a gate insulating layer, a gate layer, a source and drain layer, and an interlayer dielectric layer. In the non-display display region, the optical sensor device includes a first insulating layer, a conductive layer and a second insulating layer which are stacked sequentially. The conductive layer is arranged in a same layer as the source and drain layer or the gate layer. In the non-display display region, the first insulating layer is provided with a first through-hole, and the optical sensor device further includes a photo-sensitive device in the first through-hole.

Provided is a display device that includes a substrate including a plurality of pixels; a display element layer including a light emitting element provided in each of the pixels; and a touch sensor on the display element layer. The touch sensor may include: a base layer on the display element layer; a first conductive pattern on the base layer; a first insulating layer provided over the first conductive pattern; a second conductive pattern on the first insulating layer; a second insulating layer provided over the second conductive pattern; an intermediate layer on the base layer; and a cover layer provided over the intermediate layer. The intermediate layer and the cover layer may include different materials.

The present disclosure provides a wire structure for a display panel, a display panel, a display device, and a manufacturing method. The wire structure includes a first wire layer and a thermally conductive layer above the first wire layer. A thermal conductivity of the thermally conductive layer is greater than a thermal conductivity of the first wire layer.

The present application discloses a display panel and method of manufacturing thereof. The display panel of the present application includes a substrate, an active switch, a color photoresist layer, a first electrode layer, a light emitting diode, a second electrode layer, an encapsulation layer and a driver circuit. The light emitting diode includes a red light emitting layer, a green light emitting layer and a blue light emitting layer which includes a silicon-germanium quantum dot material.

The present disclosure provides a back plate for OLED display substrate, and a method for manufacturing the same. The back plate comprises a pixel definition layer comprising a body layer and an interface layer disposed on the surface of the body layer. The interface layer exhibits different lyophilic or lyophobic properties with respect to a functional layer of the OLED depending on the temperature of the interface layer. When the OLED display substrate is manufactured by using the back plate according the present disclosure, the cost can be reduced, and the device yield of the display substrate can be ensured.

A transparent display substrate includes a first base and a plurality of sub-pixels disposed on the first base. At least one sub-pixel of the plurality of sub-pixels has a light-emitting region and a transparent region. In the at least one sub-pixel, each sub-pixel includes at least one thin-film transistor, a capacitor and a self-luminescent device that are located in the light-emitting region of the sub-pixel. The self-luminescent device is disposed on a side of the capacitor away from the at least one thin film transistor in a direction perpendicular to the first base. The at least one thin film transistor and the capacitor are electrically connected.

A method for manufacturing a display substrate includes: providing a base, the base having a non-display area that includes a binding area; forming a light-emitting functional layer and an encapsulating layer successively on a side of the base, an orthographic projection of the encapsulating layer on the base not overlapping with the binding area; and forming a touch structure on a surface of encapsulating layer away from the base, the touch structure including a first part that is in contact with the encapsulating layer, and a material of the first part including a conductive material. Forming the first part includes: forming the first part by a nanoimprint process.

The disclosure provides a display substrate, a fabrication method thereof and a display device. The display substrate includes a base, and has a display area and a frame area. The method includes: forming an active region of a thin film transistor in the display area; forming a first lead in the frame area; forming a buffer layer directly covering the first lead; forming a connection via hole communicating with the active region; forming a protective layer directly covering the buffer layer in the frame area; cleaning the active region exposed by the connection via hole after forming the protective layer; removing the protective layer in the frame area after cleaning; and forming a second lead in the frame area after removing the protective layer, an orthographic projection of the second lead on the base and an orthographic projection of the first lead on the base at least partially overlap.

The present disclosure provides a display panel and a display device. The display panel includes a display area, a transmitted subregion, a substrate, an array layer, a first barrier wall, a second barrier wall, a light emitting layer, and a boss. The boss includes a plurality of step layers. The light emitting layer covers the boss and is discontinuous at the boss. The barrier walls and the boss prevent external substances from entering the panel through film layers, thereby effectively preventing continued diffusion of water vapor to protect the display panel.

An exemplary embodiment of the present disclosure provides a display device including: a substrate; a semiconductor layer disposed on the substrate; a first transistor including a first gate electrode disposed on the semiconductor layer; a light-emitting diode connected with the first transistor; and a first layer disposed between the substrate and the semiconductor layer, wherein the semiconductor layer includes a first electrode, a second electrode, and a channel disposed between the first electrode and the second electrode, the channel includes an impurity, and the first layer overlaps the first transistor.