A first metal layer can be deposited over first dielectric material layers of a first substrate, and can be patterned into first metallic plates. First bonding pads including a respective one of the first metallic plates are formed. A first polymer material layer can be formed over the first bonding pads. A second semiconductor die including second bonding pads is bonded to the first bonding pads to form a bonded assembly.

A first metal layer can be deposited over first dielectric material layers of a first substrate, and can be patterned into first bonding pads. A first low-k material layer can be formed over the first bonding pads. The first low-k material layer includes a low-k dielectric material such as a MOF dielectric material or organosilicate glass. A second semiconductor die including second bonding pads can be provided. The first bonding pads are bonded to the second bonding pads to form a bonded assembly.

Representative implementations of techniques and devices are used to reduce or prevent conductive material diffusion into insulating or dielectric material of bonded substrates. Misaligned conductive structures can come into direct contact with a dielectric portion of the substrates due to overlap, especially while employing direct bonding techniques. A barrier interface that can inhibit the diffusion is disposed generally between the conductive material and the dielectric at the overlap.

A stacking structure including a first die, a second die stacked on the first die, and a third die and a fourth die disposed on the second die. The first die has a first metallization structure, and the first metallization structure includes first through die vias. The second die has a second metallization structure, and second metallization structure includes second through die vias. The first through die vias are bonded with the second through die vias, and sizes of the first through die vias are different from sizes of the second through die vias. The third and fourth dies are disposed side-by-side and are bonded with the second through die vias.

A semiconductor package structure includes a semiconductor die having an active surface, a conductive bump electrically coupled to the active surface, and a dielectric layer surrounding the conductive bump. The conductive bump and the dielectric layer form a planar surface at a distal end of the conductive bump with respect to the active surface. The distal end of the conductive bump is wider than a proximal end of the conductive bump with respect to the active surface.

A first semiconductor die includes first bonding pads. The first bonding pads include proximal bonding pads embedded within a first bonding dielectric layer and distal bonding pads having at least part of the sidewall that overlies the first bonding dielectric layer. A second semiconductor die includes second bonding pads. The second bonding pads are bonded to the proximal bonding pads and the distal bonding pads. The proximal bonding pads are bonded to a respective one of a first subset of the second bonding pads at a respective horizontal bonding interface and the distal bonding pads are bonded to a respective one of a second subset of the second bonding pads at a respective vertical bonding interface at the same time. Dielectric isolation structures may vertically extend through the second bonding dielectric layer of the second semiconductor die and contact the first bonding dielectric layer.

In accordance with the disclosure, an inductor may be formed over a semiconductor substrate of one or both dies in a face-to-face die arrangement while reducing the parasitic capacitance between the inductor and the adjacent die. In disclosed embodiments, a semiconductor device may include a void (e.g., an air gap) between the inductor and the adjacent die to reduce the parasitic capacitance between the inductor and the adjacent die. The void may be formed in the die that includes the inductor and/or the adjacent die. In some respects, the void may be etched in interface layers (e.g., comprising bump pads and dielectric material) between the semiconductor dies, and may extend along the length of the inductor.

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a first insulating layer positioned above the substrate, a second insulating layer positioned above the first insulating layer, a plurality of first conductive features positioned in the first insulating layer and the second insulating layer, and an alleviation structure positioned between the first insulating layer and the second insulating layer. The alleviation structure includes a first connecting interlayer respectively electrically coupled to the plurality of first conductive features positioned in the first insulating layer and the second insulating layer, and a plurality of alleviation structures positioned between the plurality of first conductive features in the first insulating layer and the plurality of first conductive features in the second insulating layer, wherein a porosity of the plurality of alleviation structures is between about 25% and about 100%.

Various embodiments of the present disclosure are directed towards a three-dimensional (3D) trench capacitor, as well as methods for forming the same. In some embodiments, a first substrate overlies a second substrate so a front side of the first substrate faces a front side of the second substrate. A first trench capacitor and a second trench capacitor extend respectively into the front sides of the first and second substrates. A plurality of wires and a plurality of vias are stacked between and electrically coupled to the first and second trench capacitors. A first through substrate via (TSV) extends through the first substrate from a back side of the first substrate, and the wires and the vias electrically couple the first TSV to the first and second trench capacitors. The first and second trench capacitors and the electrical coupling therebetween collectively define the 3D trench capacitor.

In one embodiment, a semiconductor wafer includes a first substrate, a first insulator provided on the first substrate, and a plurality of first pads provided in the first insulator. The wafer further includes a second insulator provided on the first insulator, a plurality of second pads provided on the first pads in the second insulator, a stacked film alternately including a plurality of first insulating layers and a plurality of second insulating layers provided in the second insulator, and a second substrate provided on the second insulator. Furthermore, the first insulator and the second insulator are connected to each other between an edge face of the first insulator and an edge face of the second insulator, and the second insulator intervenes between the first insulator and the stacked film at the edge faces of the first and second insulators.