A method of manufacturing a semiconductor element according to the present disclosure includes an element forming step (S1) of forming, on an underlying substrate (11), a semiconductor element (15) connected to the underlying substrate (11) via a connecting portion (13b) and including an upper surface (15a) inclined with respect to a growth surface of the underlying substrate (11), a preparing step (S2) of preparing a support substrate (16) including an opposing surface (16c) facing the underlying substrate (11), a bonding step (S3) of pressing the upper surface (15a) of the semiconductor element (15) against the opposing surface (16c) of the support substrate (16) and heating the upper surface (15a) to bond the upper surface (15a) of the semiconductor element (15) to the support substrate (16), and a peeling step (S4) of peeling the semiconductor element (15) from the underlying substrate (11).

A semiconductor structure includes a first die, a second die over the first die, and a positioning member disposed within a bonding dielectric and configured to align the second die with the first die. A method for forming a semiconductor structure includes receiving a first die having a first bonding layer; forming a recess on the first bonding layer; forming a positioning member on a second die; bonding the second die over the first die using the first bonding layer; and disposing the positioning member into the recess.

Disclosed is a package and methods for making same. A package includes: a substrate having a first region comprising N number of metallization layers and a second region comprising M number of metallization layers, where M is less than N; a passive component located within the second region on a first surface of the substrate; and a die located within the second region on a second surface of the substrate opposite the first surface of the substrate, the die being electrically coupled to the passive component by at least one of the M number of metallization layers within the second region.

Embodiments of the present disclosure propose a semiconductor packaging method and a semiconductor structure. The semiconductor packaging method includes: providing a substrate; forming a metal pad on the substrate, where there is a gap between a sidewall of the metal pad and the substrate; and connecting multiple metal pads on substrates to each other.

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a first semiconductor structure and a first connecting structure, wherein the first connecting structure includes a first connecting insulating layer positioned on the first semiconductor structure, two first conductive layers positioned in the first connecting insulating layer, and a first porous layer positioned between the two first conductive layers. A porosity of the first porous layer is between about 25% and about 100%.

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a first insulating layer positioned above the substrate, a second insulating layer positioned above the first insulating layer, a plurality of first conductive features positioned in the first insulating layer and the second insulating layer, and an alleviation structure positioned between the first insulating layer and the second insulating layer. The alleviation structure includes a first connecting interlayer respectively electrically coupled to the plurality of first conductive features positioned in the first insulating layer and the second insulating layer, and a plurality of alleviation structures positioned between the plurality of first conductive features in the first insulating layer and the plurality of first conductive features in the second insulating layer, wherein a porosity of the plurality of alleviation structures is between about 25% and about 100%.

A memory device includes a cell wafer including a memory cell array; a first logic wafer bonded to one surface of the cell wafer, and including a first logic circuit which controls the memory cell array; and a second logic wafer bonded to the other surface of the cell wafer which faces away from the one surface, and including a second logic circuit which controls the memory cell array.

Examples herein include die to metallization structure connections that eliminate the solder joint to reduce the resistance and noise on the connection. In one example, a first die is attached to a metallization layer by a plurality of copper interconnections and a second is attached to the metallization layer opposite the first die through another plurality of copper interconnections. In this example, the copper interconnects may connect the respective die to a metallization structure in the metallization layer.

At least some embodiments of the present disclosure relate to a method for manufacturing a bonding structure. The method includes: providing a substrate with a seed layer; forming a conductive pattern on the seed layer; forming a dielectric layer on the substrate and the conductive pattern; and removing a portion of the dielectric layer to expose an upper surface of the conductive pattern without consuming the seed layer.

Techniques are employed to mitigate the anchoring effects of cavity sidewall adhesion on an embedded conductive interconnect structure, and to allow a lower annealing temperature to be used to join opposing conductive interconnect structures. A vertical gap may be disposed between the conductive material of an embedded interconnect structure and the sidewall of the cavity to laterally unpin the conductive structure and allow uniaxial expansion of the conductive material. Additionally or alternatively, one or more vertical gaps may be disposed within the bonding layer, near the embedded interconnect structure to laterally unpin the conductive structure and allow uniaxial expansion of the conductive material.