A method is provided. The method includes one or more of conditioning one or more die pads of a singular die, applying a nickel layer to the one or more die pads, applying a gold layer over the nickel layer, applying a solder paste over the gold layer, applying one or more solder balls to the solder paste, and mating the one or more solder balls to one or more bond pads of another die, a printed circuit board, or a substrate.

A resin having a small linear thermal expansion coefficient and a low absorbance is provided. The resin is characterized by including at least one structure selected from structures represented by the following general formulae (1) and (2): ##STR00001##

Disclosed is a method of fabricating a semiconductor image sensor device. The method includes providing a substrate having a pixel region, a periphery region, and a bonding pad region. The substrate further has a first side and a second side opposite the first side. The pixel region contains radiation-sensing regions. The method further includes forming a bonding pad in the bonding pad region; and forming light-blocking structures over the second side of the substrate, at least in the pixel region, after the bonding pad has been formed.

A semiconductor package and a fabrication method of the semiconductor package are disclosed. First and second redistribution layer patterns are formed on a semiconductor substrate including a chip region and a scribe lane region to provide a bonding pad portion and an edge pad portion, respectively. A polymer pattern is formed to reveal the bonding pad portion and a portion of the edge pad portion. A dicing line is set on the scribe lane region. A stealth dicing process is performed along the dicing line to separate a semiconductor chip including the bonding pad portion from the semiconductor substrate. The semiconductor chip is disposed on a package substrate. A bonding wire is formed to connect the bonding pad portion to the package substrate. The bonding wire is supported by an edge of the polymer pattern to be spaced apart from the revealed portion of the edge pad portion.

A wire bonding apparatus connecting a lead of a mounted member with an electrode of a semiconductor die through a wire comprises a capillary through which the wire is inserted, a shape acquisition part which acquires the shape of the lead to which the wire is connected, a calculating part which calculates an extending direction of a wire tail extending from the end of the capillary based on the shape of a lead to which the wire is connected next, and a cutting part which moves the capillary in the extending direction and cuts the wire to form the wire tail after the lead is connected with the electrode through the wire. Thus, in the wire bonding using wedge bonding, joining part tails (183a, 283a, 383a) formed in continuation to a first bonding point can be prevented from coming into contact with each other.

A method for fabricating a semiconductor device includes the steps of first forming an aluminum (Al) pad on a substrate, forming a passivation layer on the substrate and an opening exposing the Al pad, forming a cobalt (Co) layer in the opening and on the Al pad, bonding a wire onto the Co layer, and then performing a thermal treatment process to form a Co—Pd alloy on the Al pad.

A semiconductor apparatus includes a semiconductor layer having first and second faces, a semiconductor element portion in which semiconductor elements are provided, and openings each penetrating the semiconductor layer from the second face side, an interconnection structure provided on the first face side, and an insulator portion provided to surround at least one of the openings within a virtual plane along the second face and extend to a depth between T/2 and T from the first face, where T is the thickness of the semiconductor layer. The semiconductor layer includes a semiconductor region of one conductivity type provided on the opposite side to the one opening to the insulator portion within the virtual plane, and a semiconductor region of another conductivity type provided in the semiconductor layer from the insulator portion face on the second face side to the second face in a direction perpendicular to the second face.

Even in a case where a pad becomes smaller, solder connection strength is improved. A semiconductor device includes a pad, a diffusion layer, and a melting layer. The pad included by the semiconductor device includes a concave portion on a surface at which solder connection is to be performed. The diffusion layer included by the semiconductor device is disposed at the concave portion and constituted with a metal which remains on the surface of the pad while diffusing into solder upon the solder connection. The melting layer included by the semiconductor device is disposed adjacent to the diffusion layer and constituted with a metal which diffuses and melts into the solder upon the solder connection.

There is provided a semiconductor device including: a plurality of bumps on a first semiconductor substrate; and a lens material in a region other than the plurality of bumps on the first semiconductor substrate, wherein a distance between a side of a bump closest to the lens material and a side of the lens material closest to the bump is greater than twice a diameter of the bump closest to the lens material, and wherein the distance between the side of the bump closest to the lens material and the side of the lens material closest to the bump is greater a minimum pitch of the bumps.

A semiconductor device in a multi-chip package (MCP) includes a controller, at least one non-volatile memory die including an array of non-volatile memory cells and connected to the controller through wire bonding, and at least one volatile memory die including an array of volatile memory cells and connected to the controller through wire bonding. The controller is configured to control operations of the at least one non-volatile memory die and the at least one volatile memory die.