To facilitate connection with an external wiring when an electrode pad is located at a deep position from a surface of a semiconductor device. The electrode pad is formed at a predetermined depth from the surface of the substrate. A conductive portion is formed in a region from the electrode pad to the surface of the substrate. The conductive portion has a state in which it can be electrically connected to the wiring on the surface of the substrate. The conductive portion includes a wiring region for electrical connection with a wiring at a position directly above the electrode pad on the surface of the substrate or at a position different from the position directly above the electrode pad. The conductive portion can be formed by repeating a procedure of applying a conductive paste to a region from the electrode pad to the surface of the substrate and a procedure of curing the applied conductive paste.

An example ceramic panel has a first surface and a second surface. The ceramic panel has a bond finger well on the first surface of the ceramic panel a scribe line well on the second surface of the ceramic panel. The ceramic panel also has a scribe line along the scribe line well.

A semiconductor device is proposed. The semiconductor device includes a wiring metal layer structure. The semiconductor device further includes a dielectric layer structure arranged directly on the wiring metal layer structure. The semiconductor device further includes a bonding pad metal layer structure arranged, at least partly, directly on the dielectric layer structure. A layer thickness of the dielectric layer structure ranges from 1% to 30% of a layer thickness of the wiring metal layer structure. The wiring metal layer structure and the bonding pad metal structure are electrically connected through openings in the dielectric layer structure.

Embodiments of semiconductor devices and fabrication methods thereof are disclosed. In an example, a semiconductor device includes NAND memory cells and a first bonding layer including first bonding contacts. The semiconductor device also includes a second semiconductor structure including DRAM cells and a second bonding layer including second bonding contacts. The semiconductor device also includes a third semiconductor structure including a processor, SRAM cells, and a third bonding layer including third bonding contacts. The semiconductor device further includes a first bonding interface between the first and third bonding layers, and a second bonding interface between the second and third bonding layers. The first bonding contacts are in contact with a first set of the third bonding contacts at the first bonding interface. The second bonding contacts are in contact with a second set of the third bonding contacts at the second bonding interface. The first and second bonding interfaces are in a same plane.

A new method, system and apparatus for mounting mechanically, thermally and electrically light emitting diode (LED), crystals, arrays or packages. The above provides an LED assembly having reduced number of components and costs, superior heat dissipation, mechanical properties and a compact structure. The use of a grid or mesh allows for more efficient and inexpensive removal of heat from one or more LEDs within an LED fixture.

According to an embodiment of the present disclosure, an unsealing method for exposing a semiconductor device package covered by a mold includes the steps of performing a first unsealing process and performing a second unsealing process. The first unsealing process includes a step for irradiating a part of the mold with a laser beam having at least one wavelength band so as to remove an organic resin included in the mold. The second unsealing process includes a step for applying a physical impact to a residue of the mold generated by the first unsealing process so as to expose the semiconductor device.

Isolator structures for an integrated circuit with reduced effective parasitic capacitance. Disclosed embodiments include an isolator structure with parallel conductive elements forming a capacitor or inductive transformer, overlying a semiconductor structure including a well region of a first conductivity type formed within an tank region of a second conductivity type. The tank region is surrounded by doped regions and a buried doped layer of the first conductivity type, forming a plurality of diodes in series to the substrate. The junction capacitances of the series diodes have the effect of reducing the parasitic capacitance apparent at the isolator.

The bonding wire being a Pd-coated copper bonding wire includes: a copper core material; and a Pd layer and containing a sulfur group element, in which with respect to the total of copper, Pd, and the sulfur group element, a concentration of Pd is 1.0 mass % to 4.0 mass % and a total concentration of the sulfur group element is 50 mass ppm or less, and a concentration of S is 5 mass ppm to 2 mass ppm, a concentration of Se is 5 mass ppm to 20 mass ppm, or a concentration of Te is 15 mass ppm to 50 mass ppm or less. A wire bonding structure includes a Pd-concentrated region with the concentration of Pd being 2.0 mass % or more relative to the total of Al, copper, and Pd near a bonding surface of an Al-containing electrode of a semiconductor chip and a ball bonding portion.

An integrated circuit package includes a first conductive element that is fabricated as part of the integrated circuit package and a micro-wire having a first end coupled to the first conductive element. The micro-wire has been fabricated ex-situ and is of a metal having a diameter of 10 microns or less.

Even in a case where a pad becomes smaller, solder connection strength is improved. A semiconductor device includes a pad, a diffusion layer, and a melting layer. The pad included by the semiconductor device includes a concave portion on a surface at which solder connection is to be performed. The diffusion layer included by the semiconductor device is disposed at the concave portion and constituted with a metal which remains on the surface of the pad while diffusing into solder upon the solder connection. The melting layer included by the semiconductor device is disposed adjacent to the diffusion layer and constituted with a metal which diffuses and melts into the solder upon the solder connection.