A semiconductor device includes a first insulator, a transistor over the first insulator, a second insulator over the transistor, and a third insulator over the second insulator. The transistor includes an oxide semiconductor. The amount of oxygen released from the second insulator when converted into oxygen molecules is larger than or equal to 110.sup.14 molecules/cm.sup.2 and smaller than 110.sup.16 molecules/cm.sup.2 in thermal desorption spectroscopy at a surface temperature of a film of the second insulator of higher than or equal to 50 C. and lower than or equal to 500 C. The second insulator includes oxygen, nitrogen, and silicon.

A method for replacing a capillary of a wire bonding apparatus that includes a holding unit that holds a capillary includes transferring a capillary replacing unit to the wire bonding apparatus by a mobile robot in response to receiving a capillary replacement start signal from the wire bonding apparatus, separating, by the capillary replacing unit, the capillary corresponding to the replacement signal from the wire bonding apparatus, and installing, by the capillary replacing unit, a new capillary in the wire bonding apparatus.

A microelectronic device is formed by thinning a substrate of the microelectronic device from a die attach surface of the substrate, and forming a copper-containing layer on the die attach surface of the substrate. A protective metal layer is formed on the copper-containing layer. Subsequently, the copper-containing layer is attached to a package member having a package die mount area. The protective metal layer may optionally be removed prior to attaching the copper-containing layer to the package member. Alternatively, the protective metal layer may be left on the copper-containing layer when the copper-containing layer is attached to the package member. A structure formed by the method is also disclosed.

The reliability of semiconductor device is improved. The method of manufacturing a semiconductor device has a step of performing plasma treatment prior to the wire bonding step, and the surface roughness of the pads after the plasma treatment step is equal to or less than 3.3 nm.

A method and structure suitable for, e.g., improving high voltage breakdown reliability of a microelectronic device such as a capacitor usable for galvanic isolation of two circuits. A first dielectric layer has a first dielectric constant located over a semiconductor substrate. A metal structure located over the first dielectric layer has a side surface. A second dielectric layer having a second different dielectric constant is located adjacent the metal structure. A dielectric structure located between the side surface of the metal structure and the second dielectric layer has the first dielectric constant.

A circuit element is formed on a substrate made of a compound semiconductor. A bonding pad is disposed on the circuit element so as to at least partially overlap the circuit element. The bonding pad includes a first metal film and a second metal film formed on the first metal film. A metal material of the second metal film has a higher Young's modulus than a metal material of the first metal film.

In a described example, a packaged integrated circuit (IC) includes a lead frame with a lead and with an IC chip mount pad. A portion of the lead adjacent to the IC chip mount pad is mechanically deformed to form a lead lock. An integrated circuit chip is mounted on a first side of the IC chip mount pad; and the integrated circuit chip, the IC chip mount pad, and the portion are covered in molding compound.

This semiconductor device is provided with: a substrate which has, on a principal surface thereof, an input unit for inputting an alternating current power from the exterior, a ground connection unit for connecting to ground formed on the exterior, an output unit for outputting a post-adjustment direct current power to the exterior, and a semiconductor layer; a first Schottky barrier diode formed in a first region of the semiconductor layer so that a cathode electrode is connected to the input unit and so that an anode electrode is connected to the ground connection unit; a second Schottky barrier diode formed in a second region of the semiconductor layer so that a cathode electrode is connected to the output unit and so that an anode electrode is connected to the input unit; and a third Schottky barrier diode formed in a third region of the semiconductor layer so that a cathode electrode is connected to the output unit and so that an anode electrode is connected to the ground connection unit.

A method of generating a wire loop profile in connection with a semiconductor package is provided. The method includes the steps of: (a) providing package data related to the semiconductor package; and (b) creating a loop profile of a wire loop of the semiconductor package, the loop profile including a tolerance band along at least a portion of a length of the wire loop.

A dielectric film is disposed on a semiconductor substrate, and a conductor including a bent section is arranged between the semiconductor substrate and the dielectric film. A pad is disposed on the dielectric film. The pad is covered with a protective film. The protective film has an opening through which an upper surface of the pad is exposed. The bent section in the conductor and the pad overlap each other as seen in plan view, and an inside corner and an outside corner in the bent section are chamfered.