Systems and methods for creating interlayer mechanical or electrical attachments or connections using filaments within a three-dimensional structure, structural component, or structural electronic, electromagnetic, or electromechanical component/device.

Systems and methods for creating interlayer mechanical or electrical attachments or connections using filaments within a three-dimensional structure, structural component, or structural electronic, electromagnetic, or electromechanical component/device.

The semiconductor device according to the present invention includes: an n-type semiconductor substrate; a p-type anode layer provided in a front surface of the n-type semiconductor substrate; an anode electrode provided on the p-type anode layer; and a wire connected to the anode electrode, the p-type anode layer includes: a p.sup.+-type anode layer disposed to include a position right under a portion where the wire is connected; and a p.sup.-type anode layer disposed to exclude the position right under the portion where the wire is connected, and an impurity concentration of the p.sup.+-type anode layer is higher than an impurity concentration of the p.sup.-type anode layer.

Provided here are: an electrically-conductive semiconductor substrate with which a semiconductor circuit is formed; an insulating film deposited on a major surface of the electrically-conductive semi-conductor substrate; and a bonding pad having fixing parts fixed onto the insulating film, side wall parts rising up from the fixing parts, and an electrode part connected to the side wall parts and disposed in parallel to the major surface; wherein the electrode part forms, together with the insulating film, a gap region therebetween, and portions of the electrode part where it is connected to the side wall parts are configured to have at least one of: a positional relationship in which they sandwich therebetween a central portion of the electrode part in its bonding region to be bonded to a bonding wire; and a positional relationship in which they surround the central portion.

A semiconductor device includes: a semiconductor layer of silicon carbide including a plurality of layers disposed on a main surface side; an electrode layer that is one of the plurality of layers, wherein the electrode layer has an electrode connecting surface to which a conductive connecting member is connected, and the electrode layer is composed mainly of silver; and a first metal layer that is a layer, different from the electrode layer, among the plurality of layers, wherein the first metal layer has a first bonding surface bonded onto the electrode layer such that the electrode connecting surface is exposed to an outside, and a second bonding surface electrically connected to the semiconductor layer, and the first metal layer is composed mainly of titanium carbide.

A semiconductor device includes a MOSFET including a PN junction diode. A unipolar device is connected in parallel to the MOSFET and has two terminals. A first wire connects the PN junction diode to one of the two terminals of the unipolar device. A second wire connects the one of the two terminals of the unipolar device to an output line, so that the output line is connected to the MOSFET and the unipolar device via the first wire and the second wire. In one embodiment the connection of the first wire to the diode is with its anode, and in another the connection is with the cathode.

A bonding pad layer system is deposited on a semiconductor chip as a base, for example, a micromechanical semiconductor chip, in which at least one self-supporting dielectric membrane made up of dielectric layers, a platinum conductor track and a heater made of platinum is integrated. In the process, the deposition of a tantalum layer takes place first, upon that the deposition of a first platinum layer, upon that the deposition of a tantalum nitride layer, upon that the deposition of a second platinum layer and upon that the deposition of a gold layer, at least one bonding pad for connecting with a bonding wire being formed in the gold layer. The bonding pad is situated in the area of the contact hole on the semiconductor chip, in which a platinum conductor track leading to the heater is connected using a ring contact and/or is connected outside this area.

A bonding pad formed to a desired thickness is arranged close to a surface of an image sensor. An imaging apparatus includes a semiconductor substrate, a wiring layer, and a signal transmission section. On the semiconductor substrate, a photoelectric conversion section for generating an image signal corresponding to emitted light is formed. The wiring section is formed by having an insulation layer and a wiring layer stacked one on top of the other. The signal transmission section is formed between a recessed section formed on a surface different from the light-receiving surface of the semiconductor substrate on the one hand and the wiring section on the other hand, the signal transmission section being arranged partially in the recessed section. The signal transmission section transmits an image signal transmitted by the wiring layer through an opening formed from the light-receiving surface of the semiconductor substrate toward the recessed section.

A fluidic assembly method is provided that uses a counterbore pocket structure. The method is based upon the use of a substrate with a plurality of counterbore pocket structures formed in the top surface, with each counterbore pocket structure having a through-hole to the substrate bottom surface. The method flows an ink with a plurality of objects over the substrate top surface. As noted above, the objects may be micro-objects in the shape of a disk. For example, the substrate may be a transparent substrate and the disks may be light emitting diode (LED) disks. Simultaneously, a suction pressure is created at the substrate bottom surface. In response to the suction pressure from the through-holes, the objects are drawn into the counterbore pocket structures. Also provided is a related fluidic substrate assembly.

Embodiments of packaged semiconductor devices and methods of making thereof are provided herein, which include a semiconductor die having a plurality of pads on an active side; a dummy die having a plurality of openings that extend from a first major surface to a second major surface opposite the first major surface, wherein the plurality of openings are aligned with the plurality of pads; and a silicone-based glue attaching the dummy die to the active side of the semiconductor die, wherein a plurality of bondable surfaces of the semiconductor die are exposed through the plurality of openings of the dummy die.