An apparatus and method for reducing the volume of a resource allocation information message in a broadband wireless communication system are provided. The method includes transmitting a message including information indicating a periodicity of an uplink control channel for an initial network entry; and receiving an uplink signal for the initial network entry through the uplink control channel.

Described examples include a microelectronic device with a high voltage capacitor that includes a high voltage node, a low voltage node, a first dielectric disposed between the low voltage node and the high voltage node, a first conductive plate disposed between the first dielectric and the high voltage node, and a second dielectric disposed between the first conductive plate and the high voltage node.

An electronic device comprises: a molybdenum layer; a bond pad formed on the molybdenum layer, the bond pad comprising aluminum; and a wire bonded to the bond pad, the wire comprising gold.

In a described example, a packaged integrated circuit (IC) includes a lead frame with a lead and with an IC chip mount pad. A portion of the lead adjacent to the IC chip mount pad is mechanically deformed to form a lead lock. An integrated circuit chip is mounted on a first side of the IC chip mount pad; and the integrated circuit chip, the IC chip mount pad, and the portion are covered in molding compound.

A semiconductor package includes test pad stack disposed in a first region of an upper surface of a semiconductor package substrate. One or more semiconductor dies conductively couple to the test pad stack. A first end of a test wirebond conductively couples to the test pad stack. A dummy pad stack is disposed in a peripheral region on the upper surface of the semiconductor package substrate. A second end of the test wirebond conductively couples to the dummy pad stack. A mold compound disposed on, about, or across the first region and the peripheral regions of the upper surface of the semiconductor package substrate at least partially covering the semiconductor die stack. A first portion of the test wirebond is disposed in the cured mold compound. The peripheral regions may be trimmed from the semiconductor package substrate, exposing at least a second portion of the test wirebond.

A semiconductor device may include a semiconductor substrate, a first bonding pad provided on an upper surface of the semiconductor substrate and constituted of a metal including aluminum, a second bonding pad provided on the upper surface of the semiconductor substrate, and a first protrusion protruding from an upper surface of the first bonding pad. The first protrusion may be provided on the upper surface of the first bonding pad only at a position adjacent to a peripheral edge of the first bonding pad, the peripheral edge of the first bonding pad may be opposed to the second bonding pad.

An imaging apparatus that forms an image of a light beam transmitted through an imaging lens on an imaging element includes a laminated material that is provided on the imaging element, the light beam being transmitted through the laminated material, the laminated material being provided at a position at which an end portion of an upper surface of the laminated material allows an outermost light beam out of light beams to be transmitted therethrough, the light beams entering a pixel in an outer end portion of the imaging element in an effective pixel area, the position having a width Hopt.

A semiconductor device includes a semiconductor element, a base body, a conductive adhesive member, and a sealing member. The semiconductor element includes a substrate, a semiconductor element structure provided on the substrate, and p-electrode and n-electrode provided on the semiconductor element structure. The semiconductor element is disposed on the base body. The conductive adhesive member electrically connects the p-electrode and the n-electrode to the base body. The sealing member is provided to cover the semiconductor element on an upper surface of the base body. The conductive adhesive member contains particles selected from a group of (i) surface-treated particles having a particle diameter of 1 nm or more and 100 m or less and (ii) particles that coexist with a dispersing agent.

A light emitting device can include a light emitting structure including a p-GaN based layer, an active layer having multiple quantum wells, and an n-GaN based layer; a p-electrode and an n-electrode electrically connecting with the light emitting structure, respectively, in which the n-electrode has a plurality of layers; a phosphor layer disposed on a top surface of the light emitting structure; and a passivation layer disposed between the phosphor layer and the top surface of the light emitting structure, and disposed on outermost side surfaces of the light emitting structure, in which the p-electrode and the n-electrode are disposed on opposite sides of the light emitting structure. Also, the phosphor layer has a two-digit micrometer thickness, and includes a pattern to bond an n-electrode pad on a portion of the n-electrode by a wire, and comprises different phosphor materials configured to emit light of different colors.

The present disclosure provides embodiments of package devices and methods for making package devices for a semiconductor die. One embodiment includes a die mounting structure having a finished bond pad that includes a copper bond pad and a cobalt-containing layer over a top surface of the copper bond pad, and a wire bond structure that is bonded to a top surface of the cobalt-containing layer of the finished bond pad, where cobalt-containing material of the cobalt-containing layer is located between a bottom surface of the wire bond structure and the top surface of the copper bond pad such that the cobalt-containing material is present under a center portion of the wire bond structure.