A semiconductor device in which wet-spreading of an adhesive member for bonding the semiconductor element on a base body is suppressed. The semiconductor device includes a base body, and a semiconductor element bonded on the base body via an adhesive member. The adhesive member contains surface-treated particles, or particles that coexist with a dispersing agent. At least a part of the marginal portion of the adhesive member is a region where the particles are unevenly distributed.

A semiconductor device according to an embodiment comprises a substrate, an epitaxial layer on the substrate, and a cluster including a plurality of particles disposed on the epitaxial layer, the particles being disposed to be apart from each other, and contacting the epitaxial layer.

An integrated circuit is provided that comprises a resistor, a first superconducting structure coupled to a first end of the resistor, and a second superconducting structure coupled to a second end of the resistor. A thermally conductive heat sink structure is coupled to the second end of the resistor for moving hot electrons from the resistor prior to the electrons generating phonons.

Disclosed is a method of fabricating a semiconductor image sensor device. The method includes providing a substrate having a pixel region, a periphery region, and a bonding pad region. The substrate further has a first side and a second side opposite the first side. The pixel region contains radiation-sensing regions. The method further includes forming a bonding pad in the bonding pad region; and forming light-blocking structures over the second side of the substrate, at least in the pixel region, after the bonding pad has been formed.

A method of manufacturing a bond pad structure may include depositing an aluminum-copper (AlCu) layer over a dielectric layer; and depositing an aluminum-chromium (AlCr) layer directly over the AlCu layer.

A semiconductor device is disclosed including semiconductor die stacked in a stepped, offset configuration, where die bond pads of semiconductor die on different levels are interconnected using one or more conductive bumps.

A receiver optical module that receives an optical signal and generating an electrical signal corresponding to the optical signal is disclosed. The module includes a photodiode (PD), a sub-mount, a pre-amplifier, and a stem. The sub-mount, which is made of insulating material, mounts the PD thereon. The pre-amplifier, which receives the photocurrent generated by the PD, mounts the PD through the sub-mount with an adhesive. The pre-amplifier generates an electrical signal corresponding to the photocurrent and has signal pads and other pads. The stem, which mounts the pre-amplifier, provides lead terminals wire-bonded with the signal pads of the pre-amplifier. The signal pads make distances against the sub-mount that are greater than distances from the other pads to the sub-mount.

A light-emitting device includes a substrate and a plurality of light-emitting elements disposed above the substrate. In the plurality of light-emitting elements, a first light-emitting element and a second light-emitting element different in a rate of decrease in light output along with a temperature increase are included. The plurality of light-emitting elements include: a first serial element group including some light-emitting elements connected in series among the plurality of light-emitting elements; and a second serial element group connected in parallel with the first serial element group and including some light-emitting elements connected in series among the plurality of light-emitting elements. A ratio between a total number of first light-emitting elements and a total number of second light-emitting elements is different between the first serial element group and the second serial element group.

Some embodiments relate to a bond pad structure of an integrated circuit (IC). In one embodiment the bond structure includes a bond pad and an intervening metal layer positioned below the bond pad. The intervening metal layer has a first face and a second face. A first via layer is in contact with the first face of intervening metal layer. The first via layer has a first via pattern. The bond structure also includes a second via layer in contact with the second face of the intervening metal layer. The second via layer has a second via pattern that is different than first via pattern.

A method includes bonding a Backside Illumination (BSI) image sensor chip to a device chip, forming a first via in the BSI image sensor chip to connect to a first integrated circuit device in the BSI image sensor chip, forming a second via penetrating through the BSI image sensor chip to connect to a second integrated circuit device in the device chip, and forming a metal pad to connect the first via to the second via.