A light emitting device can include a light emitting structure including a p-GaN based layer, an active layer having multiple quantum wells, and an n-GaN based layer; a p-electrode and an n-electrode electrically connecting with the light emitting structure, respectively, in which the n-electrode has a plurality of layers; a phosphor layer disposed on a top surface of the light emitting structure; and a passivation layer disposed between the phosphor layer and the top surface of the light emitting structure, and disposed on outermost side surfaces of the light emitting structure, in which the p-electrode and the n-electrode are disposed on opposite sides of the light emitting structure. Also, the phosphor layer has a two-digit micrometer thickness, and includes a pattern to bond an n-electrode pad on a portion of the n-electrode by a wire, and comprises different phosphor materials configured to emit light of different colors.

Reliability of a semiconductor device is improved. A slope is provided on a side face of an interconnection trench in sectional view in an interconnection width direction of a redistribution layer. The maximum opening width of the interconnection trench in the interconnection width direction is larger than the maximum interconnection width of the redistribution layer in the interconnection width direction, and the interconnection trench is provided so as to encapsulate the redistribution layer in plan view.

An isolation device for isolating a first signal of a first circuit from a second circuit disclosed. The isolation device may have a substrate and a plurality of metal layers disposed on the substrate. The isolation device comprises a first plate that is electrically coupled to the first circuit, and a second plate that is electrically coupled to the second circuit. The first plate is configured to transmit the first signal from to a second plate that is electrically isolated from the first plate. The first plate and the second plate is surrounded by an isolation material. The isolation device further comprises at least one trench that extend at least partially through the isolation material in a direction that is substantially perpendicular to the first plate and the second plate. The at least one trench may circumscribe one of the first plate and the second plate.

Disclosed is a method of fabricating a semiconductor image sensor device. The method includes providing a substrate having a pixel region, a periphery region, and a bonding pad region. The substrate further has a first side and a second side opposite the first side. The pixel region contains radiation-sensing regions. The method further includes forming a bonding pad in the bonding pad region; and forming light-blocking structures over the second side of the substrate, at least in the pixel region, after the bonding pad has been formed.

A semiconductor apparatus includes elements formed on a substrate, a first insulation layer, a first pad and a second pad arranged on the first insulation layer and located above the elements, and a second insulation layer that is arranged on the side surfaces and upper surfaces of the first pad and the second pad. The second insulation layer includes openings at upper surfaces of the first pad and the second pad. The thickness of the first pad and the second pad is 2 m or more, the thickness of the second insulation layer is less than or equal to of the thickness of the first pad and the second pad, and the distance between the first pad and the second pad is greater than or equal to four times the thickness of the first pad and the second pad.

A device with pillar-shaped components, includes a substrate; a wiring layer disposed on the substrate; and pillar-shaped components disposed on any of the substrate and the wiring layer, each of the pillar-shaped components having a bottom part connected to the substrate and/or the wiring layer, a top part opposed to the bottom part, and a lateral face part extending from the bottom part and connected to the top part; wherein each of the pillar-shaped components includes a first pillar-shaped part formed by plating, a second pillar-shaped part formed on the first pillar-shaped part by plating, and a ring-like projection part formed on the lateral face part to project outward and extend in a circumferential direction, and to be in a position higher than a joint position between the first pillar-shaped part and the second pillar-shaped part.

A system and method of manufacturing a system are disclosed. An embodiment of the system includes a first packaged component comprising a first component and a first redistribution layer (RDL) disposed on a first main surface of the first packaged component, wherein the first RDL includes first pads. The system further includes a second packaged component having a second component disposed at a first main surface of the second packaged component, the first main surface having second pads and a connection layer between the first packaged component and the second packaged component, wherein the connection layer connects a first plurality of the first pads with the second pads.

A solid-state imaging apparatus includes: a solid-state imaging device photoelectrically converting light taken by a lens; and a light shielding member shielding part of light incident on the solid-state imaging device from the lens, wherein an angle made between an edge surface of the light shielding member and an optical axis direction of the lens is larger than an incident angle of light to be incident on an edge portion of the light shielding member.

A chip part includes a substrate, an element formed on the substrate, and an electrode formed on the substrate. A recess and/or projection expressing information related to the element is formed at a peripheral edge portion of the substrate.

A bonding wire for a semiconductor device including a coating layer having Pd as a main component on the surface of a Cu alloy core material and a skin alloy layer containing Au and Pd on the surface of the coating layer has a Cu concentration of 1 to 10 at % at an outermost surface thereof and has the core material containing a metallic element of Group 10 of the Periodic Table of Elements in a total amount of 0.1 to 3.0% by mass, thereby achieving improvement in 2nd bondability and excellent ball bondability in a high-humidity heating condition. Furthermore, a maximum concentration of Au in the skin alloy layer is preferably 15 at % to 75 at %.