A method of fabricating a semiconductor device includes receiving a device substrate; forming an interconnect structure on a front side of the device substrate; and etching a recess into a backside of the device substrate until a portion of the interconnect structure is exposed. The recess has a recess depth and an edge of the recess is defined by a sidewall of the device substrate. A conductive bond pad is formed in the recess, and a first plurality of layers cover the conductive bond pad, extend along the sidewall of the device substrate, and cover the backside of the device substrate. The first plurality of layers collectively have a first total thickness that is less than the recess depth. A first chemical mechanical planarization is performed to remove portions of the first plurality of layers so remaining portions of the first plurality of layers cover the conductive bond pad.

A semiconductor device includes an insulating support member, a first and a second conductive layer, a first semiconductor element, a first lead, a first detection conductor and a first gate conductor. The first and second conductive layers are disposed on a front surface of the insulating support member. The first semiconductor includes a first and a second electrode on the same side, and a third electrode disposed on the other side and electrically connected to the first conductive layer. The first lead is connected to the first and second conductive layer. The first detection conductor is connected to the first electrode. The first gate conductor is connected to the second electrode. At least one of the first detection conductor and the first gate conductor has an end connected to the first semiconductor element. The end has a coefficient of linear expansion smaller than that of the first conductive layer.

Embodiments of semiconductor devices and fabrication methods thereof are disclosed. In an example, a semiconductor device includes a first semiconductor structure including a processor, an array of static random-access memory (SRAM) cells, and a first bonding layer including a plurality of first bonding contacts. The semiconductor device also includes a second semiconductor structure including an array of dynamic random-access memory (DRAM) cells and a second bonding layer including a plurality of second bonding contacts. The semiconductor device further includes a bonding interface between the first bonding layer and the second bonding layer. The first bonding contacts are in contact with the second bonding contacts at the bonding interface.

A method includes bonding a first wafer to a second wafer, with a first plurality of dielectric layers in the first wafer and a second plurality of dielectric layers in the second wafer bonded between a first substrate of the first wafer and a second substrate in the second wafer. A first opening is formed in the first substrate, and the first plurality of dielectric layers and the second wafer are etched through the first opening to form a second opening. A metal pad in the second plurality of dielectric layers is exposed to the second opening. A conductive plug is formed extending into the first and the second openings.

A semiconductor device includes a lead frame including a raised portion on a surface, and a semiconductor element that is face-down mounted on the lead frame and includes a substrate including a Ga.sub.2O.sub.3-based semiconductor, an epitaxial layer including a Ga.sub.2O.sub.3-based semiconductor and stacked on the substrate, a first electrode connected to a surface of the substrate on an opposite side to the epitaxial layer, and a second electrode connected to a surface of the epitaxial layer on an opposite side to the substrate and including a field plate portion at an outer peripheral portion. The semiconductor element is fixed onto the raised portion. An outer peripheral portion of the epitaxial layer, which is located on the outer side of the field plate portion, is located directly above a flat portion of the lead frame that is a portion at which the raised portion is not provided.

According to one embodiment, an isolator includes a first electrode, a second electrode, a conductive body, and a first insulating layer. The second electrode is provided on the first electrode and separated from the first electrode. The conductive body is provided around the first and second electrodes along a first plane perpendicular to a first direction. The first direction is from the first electrode toward the second electrode. The first insulating layer is provided on the second electrode. The first insulating layer includes silicon, carbon, and nitrogen.

Functional component, forming method thereof and electronic device are provided. The functional component includes a packaging substrate and a connecting wire. The packaging substrate includes a through-hole wire-bonding area including a first insulating layer and a wire-bonding electrode sequentially formed on the substrate. The first insulating layer includes a first through hole, and the wire-bonding electrode covers the first through hole. In an area corresponding to the first through hole, the packaging substrate has wire-bonding bump electrodes on a side of the wire-bonding electrode away from the first insulating layer. The connecting wire includes a wire-bonding connection portion and a wire-bonding extension portion connected to the wire-bonding connection portion. The wire-bonding connection portion is fixedly connected to the wire-bonding electrode. The wire-bonding connection portion extends to cover at least a partial area of a side of at least one of the wire-bonding bump electrodes.

An embodiment of an IC is provided. The IC includes a memory, a controller, an intrusion detector and a memory clear circuit. The memory is configured to store sensitive data. The controller is configured to access the memory. The intrusion detector is configured to detect whether an intrusion event is present in response to an input signal. The memory clear circuit is configured to clear the sensitive data of the memory when the intrusion detector detects the intrusion event.

Provided is a semiconductor package including a chip stack that includes first and second semiconductor chips stacked in a first direction and offset in a second direction intersecting the first direction, each of the first and second semiconductor chips comprising chip pads in the second direction, a redistribution substrate on the chip stack, first bonding wires connecting the redistribution substrate and the chip pads of the first semiconductor chip, and first vertical wires connecting the redistribution substrate and the chip pads of the second semiconductor chip. Each of the first bonding wires includes a first portion in contact with one of the chip pads of the first semiconductor chip and having a first width, and a second portion extending perpendicularly on the first portion and having a second width, each of the first vertical wires has a third width, and each of the second and third widths is smaller than the first width.