A manufacturing method for a solar cell, which includes a photoelectric conversion layer absorbing light and converting the light into electrical energy, an electrode extracting the electrical energy generated in the photoelectric conversion layer, and a transport layer transporting electrons or holes from the photoelectric conversion layer, includes a transport layer forming step of forming the transport layer, in which in the transport layer forming step, a metal oxide layer is formed by an ion plating method using plasma containing oxygen.

Provided is a method for manufacturing a solar cell, including: providing a substrate having a first surface and a second surface opposite to each other forming a first doped layer on the second surface and concurrently forming a second doped layer on a target doped dielectric layer; patterning the second doped layer, including removing portions of the second doped layer; etching away the portion of the target doped dielectric layer over the first region; etching away a portion of the target doped semiconductor layer over the first region, and etching away a portion of the second doped layer over the second region; and etching away the portion of the target doped dielectric layer over the second region, a portion of the target doped semiconductor layer over the second region being reserved as a doped semiconductor portion. The respective first regions and the respective second regions are alternatingly distributed.

The present application discloses a solar cell, a solar cell module, and a method for manufacturing a solar cell. In one example, a solar cell includes a semiconductor substrate, an ultra-thin dielectric layer, a passivation layer, a first electrode, and metallic crystals. The semiconductor substrate has a light receiving surface and a back surface opposite to the light receiving surface. The ultra-thin dielectric layer is formed on at least one of the back surface and the light receiving surface of the semiconductor substrate. The passivation layer is formed on the ultra-thin dielectric layer. The first electrode is formed on the passivation layer. The metallic crystals are formed in the passivation layer. The metallic crystals include a first metallic crystal, where an end surface of the first metallic crystal abuts against the ultra-thin dielectric layer, and another end surface of the first metallic crystal is connected to the first electrode.

The present disclosure provides a hybrid heterojunction solar cell, a cell component, and a preparation method, the hybrid heterojunction solar cell comprises a semiconductor substrate having a substrate front surface and a substrate back surface opposite to each other, wherein the substrate front surface is close to a light-facing side of the cell and the substrate back surface is close to a backlight side of the cell; at least two composite layers located on one side of the substrate front surface, each composite layer includes a multi-layer structure of a tunneling layer and a doped polysilicon layer sequentially arranged in a direction gradually away from the substrate front surface. The hybrid heterojunction solar cell, cell component and a preparation method provided by this disclosure can achieve a stable passivation effect on the cell surface, reduce light absorption in the non-metallic areas of the cell, and achieve better process control at the same time.

An apparatus includes a multi-spectral sensor and an image sensor. The multi-spectral sensor includes a spectrometer having at least a first optical filter and a second optical filter. The first optical filter includes a first lattice of nanowires having a first geometric property and configured to detect light within a first spectral band. The second optical filter includes a second lattice of nanowires having a second geometric property and configured to detect light within a second spectral band. The first spectral band and the second spectral band can at least partially define a spectral resolution of the spectrometer. The image sensor includes a first pixel configured to generate a first signal in response to receiving the light within the first spectral band, and a second pixel configured to generate a second signal in response to receiving the light within the second spectral band.

The present application provides a method for preparing a TOPCON cell and a TOPCON cell. The preparation method includes steps of: double-sided texturing the silicon wafer multiple times. Polysilicon is deposited on the front side, and then phosphorus diffusion is performed to form a doped polysilicon layer and a phosphorosilicate glass; alternatively, the phosphorus diffusion is performed to form the phosphorus diffused layer and the phosphorosilicate glass. Laser grooving is performed to form localized emitters. After third double-sided texturing on the silicon wafer, the double-sided rounding is performed.

The present invention relates to a CIGS solar cell having both transparency and flexibility and a method of manufacturing the same. The method of manufacturing a CIGS solar cell having both transparency and flexibility according to the present invention is characterized by including the steps of: preparing a carrier substrate on which a transparent polymer film is stacked; sequentially stacking a rear transparent electrode, a CIGS light-absorbing layer, and a front transparent electrode on the transparent polymer film; irradiating a long-wavelength laser to an interface between the rear transparent electrode and the CIGS light-absorbing layer in some areas to remove the CIGS light-absorbing layer and the front transparent electrode, thereby forming a light-transmitting region that exposes the rear transparent electrode; and irradiating a short-wavelength laser to an interface between the carrier substrate and the transparent polymer film to separate the carrier substrate and the transparent polymer film from each other.

The present invention relates to an optoelectronic device comprising a substrate, in particular a cover layer, an optoelectronically active layer and a contacting layer, the outer and/or inner surface of which has a patterned region with a dot structure of cones or inverse cones. With such a dot structure, the optical properties and wetting properties of the optoelectronic device can be advantageously adjusted in a targeted manner. In particular, it is possible to improve light coupling into or light extraction from optoelectronic devices and thus efficiency. The invention also relates to an optoelectronic module, a method of manufacturing an optoelectronic device and the use of a patterned substrate for an optoelectronic device.

Provided are a preparation method for a TOPCon cell and a TOPCon cell prepared therefrom. The preparation method for a TOPCon cell provided in the present disclosure includes the following steps: sequentially performing chemical nickel-plating, sintering, oxide layer removal, copper electroplating, and silver electroplating on a TOPCon solar cell substrate to obtain a TOPCon solar cell.

The present application discloses a back junction solar cell and a preparation method therefor. The back junction solar cell comprises: a P-type silicon substrate; a tunneling oxide layer, an N-type doped silicon layer and a first passivation anti-reflection layer which are sequentially arranged on a first main surface of the P-type silicon substrate in a stacked manner from inside to outside; a back electrode which penetrates through the first passivation anti-reflection layer to be electrically connected with the N-type doped silicon layer; a P+ local front surface field formed by Group III elements and a front electrode formed by Group III elements arranged on a second main surface of the P-type silicon substrate, wherein the front electrode is connected to the local front surface field, and the position of the local front surface field corresponds to the position of the front electrode; a second passivation anti-reflection layer formed on the second main surface of the P-type silicon substrate in a region where the front electrode is not arranged and on the front and lateral sides of the front electrode.