The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a first contact positioned on the substrate; a first assistance feature including: a bottom portion positioned in the first contact, and a capping portion positioned on the bottom portion and on a top surface of the first contact; a second contact positioned on the substrate and separated from the first contact; and a second assistance feature positioned on the second contact. The first assistance feature and the second assistance feature include germanium or silicon germanium.