A method and alignment system for minimizing errors in the deposition of films of tailored thickness. A first position on a stage is identified for optimal placement of a downward looking microscope (DLM) and an upward looking microscope (ULM) when alignment marks on the DLM and ULM are aligned, where the DLM is attached to a bridge and the ULM is attached to the stage. A second position on the stage is identified when the ULM on the stage is aligned with the alignment marks on a metrology tool. A surface of a chucked substrate affixed to the stage is then measured. A map between a substrate coordinate system and a metrology coordinate system may then be obtained using the measured surface of the chucked substrate with the first and second positions.

A process for forming inkjet nozzle devices on a frontside surface of a wafer substrate. The process includes the steps of: (i) providing the wafer substrate having a plurality of etched holes defined in the frontside surface, each etched hole being filled with first and second polymers such that the second polymer is coplanar with the frontside surface; (ii) forming the inkjet nozzle devices on the frontside surface using MEMS fabrication steps; and (iii) removing the first and second polymers via oxidative ashing, wherein first and second polymers are different.

An apparatus may include a superstrate. The superstrate can include a body having a diameter. The body may fit within a projected square. The projected square may have a length equal to the diameter of the body. The body within the projected square may produce an open area between an exterior edge of the body and the projected square. The superstrate may further include a first projection extending from the exterior edge of the body within the open area.

A process for filling one or more etched holes defined in a frontside surface of a wafer substrate. The process includes the steps of: depositing a layer of a thermoplastic first polymer onto the frontside surface and into each hole until the holes are overfilled with the first polymer; depositing a layer of a photoimageable second polymer different than the first polymer; selectively removing the second polymer from regions outside a periphery of the holes; exposing the wafer substrate to a controlled oxidative plasma so as to reveal the frontside surface of the wafer substrate; and planarizing the frontside surface to provide holes filled with a plug of the first polymer only, each plug having a respective upper surface coplanar with the frontside surface.

Method of fabricating a microelectromechanical structure et comprising two elements suspended from a support, a cavity made in the support, said cavity having two different depths, including: fabrication of a mask on an element comprising a substrate and a structured layer formed on the substrate, said structured layer comprising the two elements that will be suspended above the cavity, the mask being formed above the structured layer, said mask comprising openings with different sections, the openings being distributed in two zones, each zone comprising openings with the same section, anisotropic etching of the element so as to define the two depths under the two suspended elements in the substrate through the structured layer, isotropic etching of the element so as to make the cavity under the suspended elements.

Disclosed herein are microelectronics package architectures having self-aligned air gaps and methods of manufacturing the same. The microelectronics packages may include first and second substrates, first and second traces, and a photosensitive material. The first trace may be attached to the first substrate and comprise a first sidewall. The second trace may be attached to the first substrate and comprise a second sidewall. The second traced may be spaced a distance from the first trace with the second sidewall facing the first sidewall. First and second portions of the photosensitive material may be attached to the first and second sidewalls, respectively. The second substrate may be attached to the first and second traces. The first and second substrates and the first and second traces may form the air gap in between the first and second traces.

A flattening apparatus includes a mold holding unit configured to suck and hold a mold including a flat portion, a substrate holding unit holding a substrate, an exposure unit irradiating a light curing composition supplied onto the substrate with light at least via the mold to cure the composition, the composition being irradiated with the light and cured in a state where the flat portion of the mold is in contact with the composition on the substrate, a gas suction unit sucking gas from a spatial region between the mold and the mold holding unit, a gas supply unit supplying the gas to the spatial region, and a control unit controlling the gas suction unit and the gas supply unit to perform temperature adjustment processing for supplying the gas to the spatial region in a state where the mold is sucked and held onto the mold holding unit.

A process for filling one or more etched holes defined in a frontside surface of a wafer substrate. The process includes the steps of: depositing a layer of a thermoplastic first polymer onto the frontside surface and into each hole until the holes are overfilled with the first polymer; depositing a layer of a photoimageable second polymer different than the first polymer; selectively removing the second polymer from regions outside a periphery of the holes; exposing the wafer substrate to a controlled oxidative plasma so as to reveal the frontside surface of the wafer substrate; and planarizing the frontside surface to provide holes filled with a plug of the first polymer only, each plug having a respective upper surface coplanar with the frontside surface.

A process for filling one or more etched holes defined in a frontside surface of a wafer substrate. The process includes the steps of: (i) depositing a layer of a photoimageable thermoplastic polymer onto the frontside surface and into each hole; (ii) reflowing the polymer; (iii) selectively removing the polymer from regions outside a periphery of each hole, the selective removing comprising exposure and development of the polymer; (iv) optionally repeating steps (i) to (iii) until each hole is overfilled with the polymer; and (v) planarizing the frontside surface to provide one or more holes filled with a plug of the polymer. Each plug has a respective upper surface coplanar with the frontside surface.

Methods of reversing the tone of a pattern having non-uniformly sized features. The methods include depositing a highly conformal hard mask layer over the patterned layer with a non-planar protective coating and etch schemes for minimizing critical dimension variations.