A structure is manufactured by forming a mask that has an opening pattern on a fine recessed and projected structure of a substrate having the fine recessed and projected structure with an average period of 1 m or less on a surface thereof, etching the surface of the substrate from a side of the mask to form a recessed portion which has an opening greater than the average period of the fine recessed and projected structure according to the opening pattern of the mask, the recessed portion having a depth equal to or greater than double a difference in height between recesses and projections of the fine recessed and projected structure, and then removing the mask.

A method for manufacturing a semiconductor device is disclosed. The method for manufacturing a semiconductor device includes forming a positive photosensitive resin film on a surface of a semiconductor wafer; exposing a part of the positive photosensitive resin film to light and providing an exposed portion on the positive photosensitive resin film; developing the positive photosensitive resin film using a developer and removing the exposed portion to form a pattern; obtaining a patterned semiconductor chip by performing plasma dicing using the pattern as a mask and singulating the semiconductor wafer; exposing a pattern of the patterned semiconductor chip; and obtaining a semiconductor chip in which the pattern is removed from the patterned semiconductor chip by removing the pattern exposed by using a removing liquid.

A method for manufacturing a semiconductor substrate, includes: applying an underlayer film-forming composition directly or indirectly to a substrate to form an underlayer film; applying a composition for forming a metal-containing resist film to the underlayer film to form a metal-containing resist film; exposing the metal-containing resist film to extreme ultraviolet rays; and developing the exposed metal-containing resist film. The underlayer film-forming composition includes: a compound including at least one structural unit selected from the group consisting of a structural unit (-1) represented by formula (1-1) and a structural unit (-2) represented by formula (1-2). X is a monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms or a monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms substituted with at least one halogen atom. Y is a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group, or a halogen atom.

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A resist underlayer film-forming composition includes: a polymer; and a solvent, in which the polymer has, in a side chain, one or two or more polymerizable multiple bonds selected from the group consisting of a carbon-carbon double bond, a carbon-carbon triple bond, a carbon-nitrogen double bond, and a carbon-nitrogen triple bond.

A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate and applying a base composition to the photoresist layer, the base composition includes non-organic base, organic base, thermal base generator, or photobase generator. The photoresist layer is selectively exposed to actinic radiation to form latent pattern. The latent pattern is developed by applying developer composition to selectively exposed photoresist layer to form pattern in photoresist layer. The base composition is applied to photoresist layer during one or more operations selected from group consisting of applying base composition to substrate as underlayer before photoresist layer is formed and the composition is subsequently absorbed by photoresist layer, a pre-exposure baking operation, after photoresist layer is selectively exposed and before developing latent pattern, and after developing latent pattern.

A composition for forming a protective film using a polymer having an imide group: cured under a film-forming condition in air and an inert gas; forming a protective film having excellent heat resistance, embedding and planarization ability for a pattern formed on a substrate, and good adhesiveness to the substrate; and forming a protective film having excellent resistance against an alkaline aqueous hydrogen peroxide. A composition for forming a protective film against alkaline aqueous hydrogen peroxide, including: (A) a polymer having a repeating unit represented by general formula (1A) having at least one or more fluorine atoms and at least one or more hydroxy groups, a terminal group is any one of the following general formulae (1B) and (1C); and organic solvent, wherein R.sub.1 represents any one group represented by the following formula (1D), and two or more kinds of R.sub.1 are optionally used in combination. ##STR00001##

A composition for forming a resist underlayer film that enables the formation of a desired resist pattern; and a method for producing a resist pattern and a method for producing a semiconductor device, each of which uses the composition for forming a resist underlayer film. (In formula (1), A.sup.1, A.sup.2, A.sup.3, A.sup.4, A.sup.5, and A.sup.6 each independently represent a hydrogen atom, methyl group, or ethyl group; Q.sup.1 represents a divalent organic group; R1 represents a tetravalent organic group; and R.sup.2 represents an alkenyl group or alkynyl group having 2-10 carbon atoms.) The film-forming composition contains a solvent and a polymer that has a unit structure given by formula (1).

A method of forming a resist pattern includes applying a photoresist to first and second regions of a processing target to form a resist layer. The processing target includes a stacked body of alternately stacked first and second layers. The first region includes an upper surface of the stacked body, and the second region includes a recess extending into the stacked body from the upper surface. The resist layer is then patterned with light passed through a multi-gradation mask including a partial translucent feature at an outer perimeter of the recess, a light shielding feature corresponding in position to the recess, and a translucent feature surrounding the partial translucent feature. A resist pattern is formed including an overhang portion extending above a portion of the recess.

In a pattern formation method for a semiconductor device fabrication, an original pattern for manufacturing a photomask is acquired, a modified original pattern is obtained by performing an optical proximity correction on the original pattern, a sub-resolution assist feature (SRAF) seed map with respect to the modified original pattern indicating locations where an image quality is improved by an SRAF pattern is obtained, SRAF patterns are placed around the original pattern, the SRAF patterns and the modified original pattern are output as mask data, and the photo mask is manufactured using the mask data.

A semiconductor photoresist composition and a method of forming patterns using the semiconductor photoresist composition are provided. The semiconductor photoresist composition including an organometallic compound, a carboxylic acid compound represented by Chemical Formula 1; and a solvent.

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