An electronic structure, an electronic package and a manufacturing method thereof are provided, in which a carrier and an adhesive layer are used to support or fix the electronic structure and the electronic package, and double carriers are used to support or fix the electronic structure and the electronic package, thereby avoiding the warpage problem of the electronic structure and the electronic package.

Disclosed herein are methods of forming a microelectronic component. In some embodiments, the method includes providing an element having a metallization layer that comprises a field dielectric and a conductive feature embedded in the field dielectric. The metallization layer also comprises a surface that includes the field dielectric and the conductive feature. The method further includes forming a copper feature over the conductive feature, forming a dielectric layer over sidewalls of the copper feature, and then planarizing the dielectric layer to form a hybrid bonding surface, where the copper feature is exposed at the hybrid bonding surface.

A display includes a wiring pad and a dummy pad on a first substrate. A first planarization layer is disposed on the wiring pad and the dummy pad. A first pad electrode layer is connected to the wiring pad and a second pad electrode layer is connected to the dummy pad. The first and second pad electrode layers are disposed on the first planarization layer. A first insulating layer covers the first and second pad electrode layers. A first pad electrode upper layer is disposed on the first pad electrode layer. A second pad electrode upper layer is disposed on the second pad electrode layer. The wiring pad, the first pad electrode layer, and the first pad electrode upper layer are electrically connected. The dummy pad, the second pad electrode layer, and the second pad electrode upper layer are electrically connected.

Microelectronic assembly architectures including a die stack in which each die includes a redistribution layer, and the die stack is positioned such that the face of each die is perpendicular to a face of a base, are provided. Each die has a first face and a second face opposite the first face, and an edge extending between the first and second faces. A redistribution layer is deposited on the first face of each die. The faces of each die in the die stack are parallel to the faces of the other dies. The die stack is positioned on the base such that the faces of each die are orthogonal to the face of the base. Each die can have a conductive contact on a bottom edge, and the conductive contact can be coupled to the respective redistribution layer on the die and to a conductive contact on the base.

A semiconductor device includes a first wiring board , an electronic component, a second wiring board, a plurality of connection members, and a sealing resin. The electronic component is arranged on the first wiring board. The second wiring board is arranged on the first wiring board so as to sandwich the electronic component. The plurality of connection members connect the first wiring board and the second wiring board. The first wiring board includes a first pad that is connected to a connection member that is located arround the electronic component among the plurality of connection members, and the second wiring board includes a second pad that is connected to the connection member located arround the electronic component and that is placed offset from the first pad in a direction that intersects a lamination direction of the first wiring board and the second wiring board.

The present disclosure relates to a semiconductor chip that allows electrical connections to be protected and a manufacturing method therefor. A semiconductor chip has a strip-shaped region including a plurality of recesses on a side surface thereof. The recesses are arranged in a matrix of rows and columns on the side surface of the semiconductor chip or in a zig-zag pattern in the region. At least two of the strip-shaped regions are formed. The strip-shaped regions are formed in different positions between the vicinity of the center and opposed ends of the side surface. The strip-shaped region is partly inclined. The present disclosure can be applied for example to a semiconductor chip for a semiconductor device in which connections for electrically connecting the semiconductor chip and the substrate are protected with underfill.

A method of manufacturing a device package. The method comprises patterning a first substrate to form patterned regions comprising a thermal oxide layer. The method further comprises directly bonding the patterned regions of the first substrate to a second substrate to form a bonding interface. The bonded first and second substrates form an integrated cooling assembly comprising a coolant chamber volume. Portions of the first substrate exposed to the coolant chamber volume comprise a native oxide layer.

A method includes forming a plurality of dies on one or more first substrates. The method further includes stacking multiple dies of the plurality of dies on a second substrate to form a die stack. The method further includes forming a through-via in the die stack. The through-via electrically couples each of the multiple dies of the die stack.