Implementations of a semiconductor package may include two or more die, each of the two more die coupled to a metal layer at a drain of each of the two more die, the two or more die and each metal layer arranged in two parallel planes; a first interconnect layer coupled at a source of each of the two more die; a second interconnect layer coupled to a gate of each of the two or more die and to a gate package contact through one or more vias; and an encapsulant that encapsulates the two or more die and at least a portion of the first interconnect layer, each metal layer, and the second interconnect layer.

In the first aspect of the present disclosure, there is provided a method of manufacturing a semiconductor device, including the steps of: providing a substrate; mounting a semiconductor die having a first die surface and a second die surface opposite to the first die surface, with the first die surface mounted to the substrate; mounting a spacer having a first spacer surface and a second spacer surface opposite to the first spacer surface, with the first spacer surface mounted on the second die surface; fusing bonding to the second spacer surface by using ultrasonic fusing.