The disclosure provides a substrate cleaning device and a substrate processing device capable of suppressing erroneous rotation detection of an optical sensor due to adhesion of droplets or mist. A substrate cleaning device includes a substrate cleaning part for cleaning a substrate, a drive roller for rotating the substrate, a driven roller rotated by the substrate, and a rotation detection part for detecting rotation of the driven roller. The rotation detection part includes a detected part provided on the driven roller, an optical sensor for detecting rotation of the detected part by irradiation with detection light, and a liquid filling part for filling an optical path forming space in which an optical path of the detection light is formed with a liquid having transmittance.

A post CMP cleaning apparatus is provided. The post CMP cleaning apparatus includes a cleaning stage. The post CMP cleaning apparatus also includes a rotating platen disposed in the cleaning stage, and the rotating platen is configured to hold and rotate a semiconductor wafer. The post CMP cleaning apparatus further includes a vibrating device disposed over the rotating platen. The post CMP cleaning apparatus further includes a solution delivery module disposed near the vibrating device and configured to deliver a cleaning fluid to the semiconductor wafer. The vibrating device is configured to provide the cleaning fluid with a specific frequency which is at least greater than 100 MHz while the rotating platen is rotating the semiconductor wafer, so that particles on the semiconductor wafer are removed by the cleaning fluid.

Methods of forming a slurry and methods of performing a chemical mechanical polishing (CMP) process utilized in manufacturing semiconductor devices, as described herein, may be performed on semiconductor devices including integrated contact structures with ruthenium (Ru) plug contacts down to a semiconductor substrate. The slurry may be formed by mixing a first abrasive, a second abrasive, and a reactant with a solvent. The first abrasive may include a first particulate including titanium dioxide (TiO.sub.2) particles and the second abrasive may include a second particulate that is different from the first particulate. The slurry may be used in a CMP process for removing ruthenium (Ru) materials and dielectric materials from a surface of a workpiece resulting in better WiD loading and planarization of the surface for a flat profile.

A substrate processing device includes a platen, a polishing pad disposed on the platen, a first rotating body, a second rotating body spaced apart from the first rotating body, a caterpillar module disposed on a portion of the polishing pad and engaged with the first rotating body and the second rotating body, and a temperature controller thermally connected to the caterpillar module.

An example substrate polishing apparatus includes a polishing unit, a cleaning unit, and a standby unit. The polishing unit includes a plurality of polishing modules defining a first space and being configured to perform a polishing process on a substrate. The cleaning unit includes a plurality of cleaning modules defining a second space and being configured to perform a cleaning process on the substrate. The standby unit includes a buffer unit between the polishing unit and the cleaning unit in a first horizontal direction and defining a third space that accommodates the substrate. The standby unit includes a plurality of coating modules defining a fourth space and being configured to form a coating layer on a front surface of the substrate. The polishing module includes a polishing pad configured to contact a rear surface of the substrate opposite to the front surface.

A cleaning system includes at least one cleaning module configured to receive a substrate after a chemical mechanical polishing (CMP) process and to remove contaminants on the substrate using a cleaning solution. The cleaning system further includes a cleaning solution supply system configured to supply the cleaning solution to the at least one cleaning module. The cleaning solution supply system includes at least one temperature control system. The at least one temperature control system includes a heating device configured to heat the cleaning solution, a cooling device configured to cool the cleaning solution, a temperature sensor configured to monitor a temperature of the cleaning solution, and a temperature controller configured to control the heating device and the cooling device.

A substrate transfer unit includes a temporary placement stage and a transfer hand. Each of the temporary placement stage and the transfer hand holds a substrate at different locations depending on the processing state of the substrate.

In one embodiment, a nozzle assembly includes a body with an internal surface forming an internal cavity within the body. The assembly also includes a gas inlet disposed within the body, a fluid inlet disposed within the body and a mixing chamber disposed within the internal cavity of the body, such that an annular gap is formed between the internal surface and an exterior surface of the mixing chamber, the mixing chamber may include: a mixing body region within the mixing chamber; one or more gas ports fluidly connecting the gas inlet to the mixing chamber, the gas ports tangentially aligned with an interior surface of the mixing chamber; a fluid port in fluid communication with the fluid inlet of the body and the mixing body region of the mixing chamber; and an outlet in fluid communication with the mixing body region configured to deliver a fluid mixture.

Embodiments herein include high throughput density chemical mechanical polishing (CMP) modules and customizable modular CMP systems formed thereof. In one embodiment, a polishing module features a carrier support module, a carrier loading station, and a polishing station. The carrier support module features a carrier platform and one or more carrier assemblies. The one or more carrier assemblies each comprise a corresponding carrier head suspended from the carrier platform. The carrier loading station is used to transfer substrates to and from the carrier heads. The polishing station comprises a polishing platen. The carrier support module, the substrate loading station, and the polishing station comprise a one-to-one-to-one relationship within each of the polishing modules. The carrier support module is positioned to move the one or more carrier assemblies between a substrate polishing position disposed above the polishing platen and a substrate transfer position disposed above the substrate loading station.