A power semiconductor module arrangement comprises a substrate comprising a dielectric insulation layer, and a first metallization layer attached to the dielectric insulation layer, at least one semiconductor body mounted on the first metallization layer, and a first layer comprising an encapsulant, the first layer being arranged on the substrate and covering the first metallization layer the at least one semiconductor body, wherein the first layer is configured to release liquid or oil at temperatures exceeding a defined threshold temperature.

There are provided a semiconductor module capable of preventing the adhesion of an epoxy resin to a terminal to which at least one of a high current and a high voltage is supplied and a method for manufacturing a semiconductor module. A semiconductor module includes: a case having an inner wall defining a casting region and a peripheral edge portion arranged outside the inner wall; an intermediate terminal arranged in along side portion of a peripheral edge portion and having a fastening surface to which a cable is fastened; a structure arranged in a long side portion of the inner wall to be adjacent to the long side portion where the intermediate terminal is arranged and higher than the fastening surface; and a sealing section formed of an epoxy resin, having weld lines formed close to the side of the structure on a surface, and cast into a casting region to seal transistors.

A wafer-scale system in package structure includes: a silicon substrate; a plurality of functional sub-modules arranged in an array mounted on the upper surface of the silicon substrate; a warping and stress adjustment structure mounted on the upper surface of the silicon substrate at the edges of the functional sub-modules; a stress cushioning flexible member structure mounted on the upper surface of the silicon substrate at the corner heads of the functional sub-modules; edge dummy devices of different sizes mounted on the upper surface of the edge area of the silicon substrate outside the array of the functional sub-modules; and a molding layer located on the upper surface of the silicon substrate, covering the functional sub-modules, the warping and stress adjustment structure, the stress cushioning flexible member structure and edge dummy devices.