The present invention provides a cleaning composition comprises water; one or more organic acid; at least two surfactants wherein the first type surfactant is a diphenyl disulfonic surfactant, the second type surfactant has a surface tension of less than 50 dynes/cm at 0.01 wt % concentration in water, and the second type surfactant is not the first type surfactant; and optionally fluoride compounds, polymers, corrosion inhibitors, biological preservatives, pH adjusting agents.

Methods of forming a slurry and methods of performing a chemical mechanical polishing (CMP) process utilized in manufacturing semiconductor devices, as described herein, may be performed on semiconductor devices including integrated contact structures with ruthenium (Ru) plug contacts down to a semiconductor substrate. The slurry may be formed by mixing a first abrasive, a second abrasive, and a reactant with a solvent. The first abrasive may include a first particulate including titanium dioxide (TiO.sub.2) particles and the second abrasive may include a second particulate that is different from the first particulate. The slurry may be used in a CMP process for removing ruthenium (Ru) materials and dielectric materials from a surface of a workpiece resulting in better WiD loading and planarization of the surface for a flat profile.

A composition for semiconductor processing according to the disclosure contains (A) a compound represented by the following general formula (1), (B) a compound represented by the following general formula (2), (C) a compound having at least one functional group selected from the group consisting of an amino group and a salt thereof (excluding a compound having a carboxyl group and a nitrogen-containing heterocyclic compound) and (D) a liquid medium, and, when the content of the (A) component is indicated by M.sub.A [mass %] and the content of the (B) component is indicated by M.sub.B [mass %], M.sub.A/M.sub.B is 1.010.sup.2 to 1.010.sup.6.
RO(CH.sub.2).sub.2O(CH.sub.2).sub.2OH(1)
ROH(2) (In the formula (1) and the formula (2), R's represent the same hydrocarbon group.)

Provided are formulations that offer a high cleaning effect on inorganic particles, organic residues, chemical residues, reaction products on the surface due to interaction of the wafer surface with the Chemical Mechanical Planarization (CMP) slurry and elevated levels of undesirable metals on the surface left on the semiconductor devices after the CMP. The post-CMP cleaning formulations comprise one or more organic acid, one or more polymer and a fluoride compound with pH <7 and optionally a surfactant with two sulfonic acid groups.

Embodiments of the disclosure provided herein include systems and methods for cleaning semiconductor substrates The method includes rotating a substrate disposed on a substrate support, spraying a front side of the substrate using a cleaning agent including one or more chelating agents through a front side nozzle assembly disposed above the substrate support, and spraying a back side of the substrate using the cleaning agent through a back side dispenser assembly disposed below the substrate support.

A cleaning brush for a semiconductor fabrication process is provided. The cleaning brush includes a core and a brush member. The core includes a circumferential portion and a closed end portion. The circumferential portion surrounds a rotation axis of the cleaning brush and defines an inlet opening for receiving a fluid. The closed end portion is connected to an end of the circumferential portion that is opposite to the inlet opening along the rotation axis. At least one elongated conduit is defined within the core and fluidly communicated with the inlet opening, and the circumferential portion includes a plurality of outlet channels passing therethrough to fluidly communicate with the elongated conduit, the outlet channels being tilted outwardly toward the closed end portion. The brush member is connected to an outer surface of the circumferential portion and covers all of the outlet channels.

An object of the present invention is to provide a semiconductor treatment liquid which has excellent anticorrosion properties against at least one metal selected from the group consisting of Cu and Co in a case of being brought into contact with an object containing, and in which defects are less likely to remain on a surface of the object to be treated after the object to be treated is subjected to water cleaning; a treatment method for an object to be treated; and a manufacturing method of an electronic device. The semiconductor treatment liquid of the present invention contains at least one purine compound selected from the group consisting of purine and a purine derivative, at least one specific compound selected from the group consisting of an organic sulfonic acid compound having 10 or less carbon atoms, sulfuric acid, and a salt of these compounds, and water, in which a pH is more than 7.0.