A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a device, a first dielectric material disposed over the device, and an opening is formed in the first dielectric material. The semiconductor device structure further includes a conductive structure disposed in the opening, and the conductive structure includes a first sidewall. The semiconductor device structure further includes a surrounding structure disposed in the opening, and the surrounding structure surrounds the first sidewall of the conductive structure. The surrounding structure includes a first spacer layer and a second spacer layer adjacent the first spacer layer. The first spacer layer is separated from the second spacer layer by an air gap.

A multilayer wiring connection structure and a method for manufacturing the same are provided. The multilayer wiring connection structure includes a first insulating film positioned on a substrate, a first wiring positioned within the first insulating film, a second insulating film positioned on the first wiring, and a second wiring positioned within the second insulating film and in contact with the first wiring. The first wiring comprises a trench having at least one anisotropically etched portion and at least one isotropically etched portion under the second wiring, and the second wiring comprises an extension filling the trench.