The invention relates to a method for producing modifications (9) in the interior of a solid body (1). The method comprises the introduction of laser radiation (14) of a laser (29) into the interior of the solid body (1) via a first surface (8) of the solid body (1). The solid body (1) forms a crystal structure. Modifications (9) are produced at predefined points in a production plane (4) in the interior of the solid body (1) by the laser radiation (14). The modifications (9) are closer to the first surface (8) than to a second surface, the second surface being parallel to the first surface (8). A plurality of linear forms (103) can be produced by the modifications (9). The solid body (1) cracks subcritically in the region of each modification (9). The subcritical cracks have an average crack length of less than 150 m orthogonally to the direction of longitudinal extent of the linear form in question. Modifications (9) that belong to the same linear form (103) and that are produced one after the other are produced at a distance from each other that is defined by the function (dx)/d<0.31, where x>d.

A chip manufacturing method for dividing a workpiece along a projected dicing line established thereon into a plurality of chips includes a modified layer forming step of applying a laser beam that is transmittable through the workpiece and focused into a first focused point and a second focused point, to the workpiece along the projected dicing line while positioning the first focused point and the second focused point within the workpiece, thereby forming a plurality of modified regions in the workpiece. The modified layer forming step includes applying the laser beam to the workpiece while forming one of the modified regions around a region where the first focused spot is positioned, and positioning the second focused spot in superposed relation to another modified region that has already been formed in the workpiece.

A chip manufacturing method for dividing a workpiece along a projected dicing line established thereon into a plurality of chips includes a modified layer forming step of applying a laser beam that is transmittable through the workpiece and focused into a first focused point and a second focused point, to the workpiece along the projected dicing line while positioning the first focused point and the second focused point within the workpiece, thereby forming a plurality of modified regions in the workpiece. The modified layer forming step includes applying the laser beam to the workpiece while forming one of the modified regions around a region where the first focused spot is positioned, and positioning the second focused spot in superposed relation to another modified region that has already been formed in the workpiece.

A method for transferring a semiconductor layer from a donor substrate to a receiver substrate includes first implantation of first light ions into the donor substrate at a predetermined implantation depth to form a buried fragile plane, epitaxy on the donor substrate of the semiconductor layer, second implantation of second light ions into the donor substrate through the semiconductor layer to be transferred level with the fragile plane, assembly by bonding of the receiver substrate and of the donor substrate covered with the semiconductor layer to be transferred, the semiconductor layer to be transferred being placed between the receiver substrate and donor substrate, and fracturing by annealing the donor substrate along the buried fragile plane, the first ions implanted with a first dose so that there is no fracturing at the predetermined implantation depth, and the second ions implanted with a second dose such that the donor substrate fractures.

A method for transferring a semiconductor layer from a donor substrate to a receiver substrate includes first implantation of first light ions into the donor substrate at a predetermined implantation depth to form a buried fragile plane, epitaxy on the donor substrate of the semiconductor layer, second implantation of second light ions into the donor substrate through the semiconductor layer to be transferred level with the fragile plane, assembly by bonding of the receiver substrate and of the donor substrate covered with the semiconductor layer to be transferred, the semiconductor layer to be transferred being placed between the receiver substrate and donor substrate, and fracturing by annealing the donor substrate along the buried fragile plane, the first ions implanted with a first dose so that there is no fracturing at the predetermined implantation depth, and the second ions implanted with a second dose such that the donor substrate fractures.