An element, a bonded structure including the element, and a method of forming the same are disclosed. The bonded structure can include a first element having a first nonconductive field region and a first conductive feature at least partially defining a bonding surface of the first element. The first conductive feature includes a first portion and a second portion over the first portion with a continuous sidewall. The second portion includes different metal composition from the first portion or comprising fluorine at the surface of the first conductive feature. A second element has a second nonconductive field region and a second conductive feature which are directly bonded to the first nonconductive field region and a first conductive feature, respectively.

Devices and methods for forming semiconductor devices are disclosed. The semiconductor device can include a plurality of semiconductor wafers. The plurality of semiconductor wafers can have a dielectric bonding layer disposed thereupon. The dielectric bonding layers can be treated to increase a bonding energy with other semiconductor wafers. A wafer having a treatment applied to a bonding layer can be bonded to another wafer.