Devices and methods for forming semiconductor devices are disclosed. The semiconductor device can include a plurality of semiconductor wafers. The plurality of semiconductor wafers can have a dielectric bonding layer disposed thereupon. The dielectric bonding layers can be treated to increase a bonding energy with other semiconductor wafers. A wafer having a treatment applied to a bonding layer can be bonded to another wafer.

A device includes first and second substrates. The first substrate has one or multiple first channels and one or multiple first conductors that are exposed at a first surface of the first substrate. The second substrate has one or multiple second channels and one or multiple second conductors that are exposed at a second surface of the first substrate. The first and second substrates are plasma bonded together at the first and second surfaces, forming direct electrical interconnects between the first and second conductors and direct fluidic interconnects between the first and second channels.

A die to wafer direct hybrid bonding method includes providing at least one die comprising a first copper pad and a first silicon oxide layer, providing a wafer comprising a second copper pad and a second silicon oxide layer, and handling the die so as to position the face of the die facing the zone for receiving the die on the wafer, by aligning the first and second pads. At least one water drop is deposited in the zone for receiving the die and/or on the face of the die. Pressure on the die is applied to form, from the water drop, a water film between the face and the zone for receiving the die.

The present disclosure relates to methods, devices, systems, and techniques for managing bonding structures in semiconductor devices. An example semiconductor device includes a first semiconductor structure, a bonding structure, and a second semiconductor structure stacked along a first direction. The first semiconductor structure is bonded to the second semiconductor structure through the bonding structure. The bonding structure includes a first group of contact structures, a second group of contact structures, and a dielectric material surrounding the first group of contact structures and the second group of contact structures. A first contact structure of the first group of contact structures is adjacent to a second contact structure of the second group of contact structures along a second direction perpendicular to the first direction. The first contact structure includes a first conductive material. The second contact structure includes the first conductive material and an oxide.