A method for transferring a semiconductor layer from a donor substrate to a receiver substrate includes first implantation of first light ions into the donor substrate at a predetermined implantation depth to form a buried fragile plane, epitaxy on the donor substrate of the semiconductor layer, second implantation of second light ions into the donor substrate through the semiconductor layer to be transferred level with the fragile plane, assembly by bonding of the receiver substrate and of the donor substrate covered with the semiconductor layer to be transferred, the semiconductor layer to be transferred being placed between the receiver substrate and donor substrate, and fracturing by annealing the donor substrate along the buried fragile plane, the first ions implanted with a first dose so that there is no fracturing at the predetermined implantation depth, and the second ions implanted with a second dose such that the donor substrate fractures.

A method for transferring a semiconductor layer from a donor substrate to a receiver substrate includes first implantation of first light ions into the donor substrate at a predetermined implantation depth to form a buried fragile plane, epitaxy on the donor substrate of the semiconductor layer, second implantation of second light ions into the donor substrate through the semiconductor layer to be transferred level with the fragile plane, assembly by bonding of the receiver substrate and of the donor substrate covered with the semiconductor layer to be transferred, the semiconductor layer to be transferred being placed between the receiver substrate and donor substrate, and fracturing by annealing the donor substrate along the buried fragile plane, the first ions implanted with a first dose so that there is no fracturing at the predetermined implantation depth, and the second ions implanted with a second dose such that the donor substrate fractures.