The present description concerns a process including the following steps: providing a plurality of assemblies, each including a donor substrate covered by a functional block successively including a first interconnection layer, a functional layer, and a second interconnection layer, the functional layer including one or more electronic components, the interconnection layers including a dielectric material in which are formed conductive elements, a first surface of the first interconnection layer in contact with the donor substrate and the free surface of the second interconnection layer being planarized so as to be compatible with a subsequent direct bonding, successively transferring, onto a receiver substrate the functional blocks, by direct bonding, to form a 3D assembly comprising a receiver substrate covered by a stack of two functional blocks.

A device may include a plurality of chiplets stacked on top of each other. Each chiplet includes a central region and an edge region outside the central region; one or more electronic components disposed within the central region; and a plurality of through-chiplet vias extending through the chiplet. The plurality of through-chiplet vias are disposed in the edge region. The device may further include a coil including a plurality of turns formed in at least two chiplets of the plurality of chiplets. Each turn includes at least two through-chiplet vias of at least one chiplet of the plurality of chiplets. The through-chiplet vias of the plurality of through-chiplet vias of the at least two turns of the plurality of turns of the coil are formed in a common plane perpendicular to main surfaces of the plurality of chiplets.