DISPLAY PANEL AND METHOD FOR PREPARING SAME AND DISPLAY DEVICE

Abstract

Provided are a display panel and a method for preparing same and a display device. The preparation method includes: forming a step-shaped opening on a pixel define film using a patterning process; forming an organic photoresist in the opening; performing fluorinated plasma treatment on the pixel define film outside the opening such that the pixel define film outside the opening forms a first pixel define layer having a hydrophilic surface layer, and the remaining pixel define film forms a hydrophobic second pixel define layer; and removing the organic photoresist in the opening.

Claims

1. A method for preparing a display panel, wherein the preparation method comprises steps of: preparing a pixel define film on a base plate, and forming a step-shaped opening on the pixel define film using a patterning process, wherein the opening comprises a first opening and a second opening, the second opening is located on a side of the first opening that is away from the base plate, and a step surface is formed at a joint between the second opening and the first opening; forming an organic photoresist in the opening, wherein the organic photoresist covers the step surface; performing fluorinated plasma treatment on the pixel define film outside the opening such that the pixel define film outside the opening forms a first pixel define layer having a hydrophilic surface layer, and the remaining pixel define film forms a hydrophobic second pixel define layer; and removing the organic photoresist in the opening.

2. The preparation method as claimed in claim 1, wherein the step of preparing the pixel define film on the base plate, and forming the step-shaped opening on the pixel define film using the patterning process comprises: coating a layer of pixel define layer material on the base plate, and curing the pixel define layer material to form the pixel define film; and performing a patterning process on the pixel define film using an exposure and development process to form the opening.

3. The preparation method as claimed in claim 2, wherein the step of performing the patterning process on the pixel define film using the exposure and development process to form the opening comprises: removing an entirety of the pixel define layer material in an area corresponding to the first opening using a half-tone mask and the exposure and development technology, and removing a part of the pixel define layer material in an area outside the first opening and within the second opening.

4. The preparation method as claimed in claim 1, wherein the step of forming the organic photoresist in the opening comprises: forming a layer of organic photoresist on the pixel define film; and removing the organic photoresist outside the opening by means of patterning.

5. The preparation method as claimed in claim 4, wherein the step of forming the organic photoresist in the opening comprises: retaining the organic photoresists in the first opening and the second opening.

6. The preparation method as claimed in claim 1, wherein the step of forming the organic photoresist in the opening comprises: forming a layer of organic photoresist on the pixel define film; and removing the organic photoresist outside the opening and a part of the organic photoresist in the second opening by means of patterning.

7. The preparation method as claimed in claim 6, wherein the step of forming the organic photoresist in the opening comprises: retaining the organic photoresist in the first opening and a part of the organic photoresist in the second opening.

8. The preparation method as claimed in claim 6, wherein the step of removing the organic photoresist outside the opening and the part of the organic photoresist in the second opening by means of patterning comprises: removing the organic photoresist using oxygen by means of patterning.

9. The preparation method as claimed in claim 1, wherein the step of performing the fluorinated plasma treatment on the pixel define film outside the opening such that the pixel define film outside the opening forms the first pixel define layer having the hydrophilic surface layer, and the remaining pixel define film forms the hydrophobic second pixel define layer comprises: performing fluorinated plasma treatment on the pixel define film from an upper surface of the pixel define film using a fluorinated plasma gas.

10. The preparation method as claimed in claim 1, wherein the step of performing the fluorinated plasma treatment on the pixel define film outside the opening such that the pixel define film outside the opening forms the first pixel define layer having the hydrophilic surface layer, and the remaining pixel define film forms the hydrophobic second pixel define layer comprises: causing a top surface of the organic photoresist to be lower than an upper surface of the pixel define film, and performing the fluorinated plasma treatment on the pixel define film from the upper surface of the pixel define film and from a side of the second opening using a fluorinated plasma gas.

11. A display panel, comprising: a base plate; and a pixel define film, disposed on the base plate and on which a step-shaped opening is formed, wherein the opening comprises a first opening and a second opening, the second opening is located on a side of the first opening that is away from the base plate, and a step surface is formed at a joint between the second opening and the first opening; the pixel define film comprises: a first pixel define layer, disposed on the base plate; and a second pixel define layer, disposed on a side of the first pixel define layer that is away from the base plate and located outside the opening.

12. The display panel as claimed in claim 11, wherein the first pixel define layer is hydrophilic, and the second pixel define layer is hydrophobic.

13. The display panel as claimed in claim 11, wherein the second pixel define layer has a same thickness at all positions.

14. The display panel as claimed in claim 11, wherein the second pixel define layer has a larger thickness at an outer periphery than outside the outer periphery of the second opening.

15. The display panel as claimed in claim 11, wherein the base plate comprises a substrate and a thin film transistor layer, and the thin film transistor comprises a light-shielding layer, a buffer layer, a semiconductor active layer, a gate insulating layer, a gate layer, an interlayer insulating layer, and a source/drain layer that are stacked in sequence.

16. A display device, comprising a display panel, wherein the display panel comprises: a base plate; and a pixel define film, disposed on the base plate and on which a step-shaped opening is formed, wherein the opening comprises a first opening and a second opening, the second opening is located on a side of the first opening that is away from the base plate, and a step surface is formed at a joint between the second opening and the first opening; the pixel define film comprises: a first pixel define layer, disposed on the base plate; and a second pixel define layer, disposed on a side of the first pixel define layer that is away from the base plate and located outside the opening.

17. The display device as claimed in claim 16, wherein the first pixel define layer is hydrophilic, and the second pixel define layer is hydrophobic.

18. The display device as claimed in claim 16, wherein the second pixel define layer has a same thickness at all positions.

19. The display device as claimed in claim 16, wherein the second pixel define layer has a larger thickness at an outer periphery of the second opening than outside the outer periphery of the second opening.

20. The display device as claimed in claim 16, wherein the base plate comprises a substrate and a thin film transistor layer, and the thin film transistor comprises a light-shielding layer, a buffer layer, a semiconductor active layer, a gate insulating layer, a gate layer, an interlayer insulating layer, and a source/drain layer that are stacked in sequence.

Description

BRIEF DESCRIPTION OF DRAWINGS

[0032] To describe the technical solutions in the embodiments of the present disclosure more clearly, the accompanying drawings required for describing the embodiments are briefly described hereinafter. Apparently, the accompanying drawings in the following descriptions show merely some embodiments of the present disclosure, and a person skilled in the art can obtain other accompanying drawings according to these accompanying drawings without creative efforts.

[0033] FIG. 1 is a schematic diagram of a structure of a display panel according to the prior art.

[0034] FIG. 2 is a schematic diagram of a first structure of a display panel according to an embodiment of the present disclosure.

[0035] FIG. 3 is a schematic diagram of a second structure of the display panel according to an embodiment of the present disclosure.

[0036] FIG. 4 is a flowchart of a method for preparing a display panel according to an embodiment of the present disclosure.

[0037] FIG. 5 is a schematic diagram of the method for preparing a display panel according to an embodiment of the present disclosure.

[0038] FIG. 6 is a schematic diagram of a film layer structure at a dotted frame A in FIG. 5.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

[0039] The technical solutions of the embodiments of the present disclosure are clearly and completely described in the following with reference to the accompanying drawings of the embodiments of the present disclosure. Apparently, the described embodiments are merely some but not all of the embodiments of the present disclosure. All other embodiments obtained by a person skilled in the art based on the embodiments of the present disclosure without creative efforts shall fall within the protection scope of the present disclosure. In addition, it should be understood that the specific implementations described herein are merely used for describing and illustrating the present disclosure, but are not intended to limit the present disclosure. In the present disclosure, unless otherwise stated, the directional terms such as “up” and “down” generally refer to directions when a device is in actual use or a working state, and specifically refer to drawing directions in the corresponding drawing; and “inside” and “outside” refer to positions relative to the contour of the device.

[0040] Embodiments of the present disclosure provide a display panel and a preparation method therefor and a display device, so as to reduce a number of times for photoetching the conventional double-layer pixel define layer. Detailed descriptions are separately provided below. It should be noted that, the description order of the following embodiments is not intended to limit preference orders of the embodiments.

[0041] In an embodiment, the present disclosure provides a method for preparing a display panel. The preparation method is used for preparing the display panel provided in any embodiment of the present disclosure. Referring to FIGS. 2 to 5, FIG. 2 and FIG. 3 are respectively schematic diagrams of two different structures of the display panel according to an embodiment of the present disclosure. FIG. 4 is a flowchart of a method for preparing a display panel according to an embodiment of the present disclosure. FIG. 5 is a schematic diagram of the method for preparing a display panel according to an embodiment of the present disclosure. The preparation method includes steps as follows.

[0042] Step S1: Prepare a pixel define film on a base plate, and pattern the pixel define film to form a step-shaped opening on the pixel define film. The opening includes a first opening and a second opening, the second opening is located on a side of the first opening that is away from the base plate, and a step surface is formed at a joint between the second opening and the first opening. In detail, step S1 includes steps as follows.

[0043] First step: Prepare a base plate.

[0044] In detail, referring to FIG. 5(a), the preparing a base plate includes steps below. First, a substrate 110 is provided. The substrate 110 can be a rigid substrate, such as glass, or an organic flexible substrate, such as polyimide (PI). Second, a thin film transistor layer 120 is prepared on the substrate 110. FIG. 6 is a schematic diagram of a film layer structure at a dotted frame A in FIG. 5. As shown in FIG. 5(a) and FIG. 6, the thin film transistor layer 120 usually includes a light-shielding layer 121, a buffer layer 122, a semiconductor active layer 123, a gate insulating layer 124, a gate layer 125, an interlayer insulating layer 126, and a source/drain layer 127 that are stacked from bottom to top. The semiconductor active layer 123, the gate layer 125, and the source/drain layer 127 jointly form components and parts of the display panel, such as a thin film transistor, a capacitor, and the like. The semiconductor active layer 123 is patterned to form an active area of the thin film transistor. The active area includes a channel area and doped areas located on two sides of the channel area. The doped area is formed by conducting the semiconductor active layer in a corresponding area after the gate insulating layer and the gate layer are formed, for example. The gate layer 125 is patterned to form a gate of the thin film transistor and an electrode plate of the capacitor, and the gate simultaneously corresponds to the channel area of the active layer. The source/drain layer 127 is patterned to form a source and a drain of the thin film transistor, and the source and the drain are respectively connected to the doped areas on two sides of the channel area using via holes extending through the interlayer insulating layer 126. Third, a passivation layer 130 is deposited on the thin film transistor layer 120 using a plasma enhanced chemical vapor deposition (PECVD) method or by sputtering. The passivation layer 130 is an inorganic material layer, including but not limited to silicon oxide (Si0.sub.2), silicon nitride (SiN.sub.x), and aluminum oxide (Al.sub.2O.sub.3). Then, a photolithography process is used to pattern the passivation layer 130 at a position corresponding to the source or the drain of the thin film transistor to obtain a passivation layer via hole that extends through the passivation layer 130, and the source or the drain of the thin film transistor is exposed from the passivation layer via hole. Similarly, a flat layer 140 is deposited on the passivation layer 130 using a physical vapor deposition (PVD) method. A material of the flat layer 140 is an organic material, and then the flat layer 140 is patterned using a yellow light process, to remove the material of the flat layer that is in and on the passivation layer via hole, thereby obtaining a flat layer via hole extending through the flat layer 140. Next, an anode layer 150 is deposited on the flat layer 140. A material of the anode layer 150 is any one of ITO/Ag/ITO, Ag/ITO, Al/WOx, Ag/IZO, and the like. The anode layer 150 is patterned using a photolithography process to remove the anode layer outside an anode pattern, and only anodes in a spaced arrangement remain. Each anode is connected to the source or the drain of the thin film transistor through a via hole extending through the planarization layer 140 and the passivation layer 130.

[0045] Second step: referring to (b1) and (b2) in FIG. 5, a layer of pixel define layer material is coated on the base plate to form a pixel define film 160. The pixel define film 160 is patterned using an exposure and development process to form a first opening 163 and a second opening 164.

[0046] In detail, a layer of pixel define layer material is coated on the base plate. The pixel define layer material is, for example, hydrophobic. The pixel define layer material is cured to form a pixel define film 160. The pixel define film 160 covers the flat layer 140 and the anode layer 150. The pixel define film 160 at the corresponding position of the anode layer 150 is removed using a half-tone mask 200 by means of an exposure and development technology to form the first opening 163 and the second opening 164. The pixel define layer material is a positive organic photoresist material and is hydrophilic. The half-tone mask 200 includes a fully transparent area 210, a half-tone area 220, and a light-shielding area 230. During the exposure, the fully transparent area 210 corresponds to the pixel define film 160 in an area of the first opening 163. The half-tone area 220 corresponds to the pixel define film 160 in an area outside the first opening 163 within the second opening 164, and the light-shielding area 230 corresponds to the pixel define film 160 in an area outside the second opening 164. In this way, the pixel define film 160 in the area where the first opening 163 is located is fully exposed, the pixel define film 160 in the area outside the first opening 163 within the second opening 164 is partially exposed, and the pixel define film 160 in the area outside the second opening 164 is not exposed. The exposed pixel define film 160 is developed using a developer to remove an entirety of the pixel define film 160 in the area where the first opening 163 is located. A part of the pixel define film 160 in the area outside the first opening 163 within the second opening 164 is removed, and the pixel define film 160 outside the second opening 164 is retained to form the pixel define film 160 having a first opening 163 and a second opening 164. The first opening 163 and the second opening 164 form a step surface at a joint.

[0047] Step S2: Form an organic photoresist in the opening, wherein the organic photoresist covers the step surface. In detail, step S2 includes steps as follows.

[0048] In a first embodiment, referring to FIG. 5 (c1), a layer of organic photoresist is formed on the pixel define film 160, the organic photoresist outside the first opening 163 and the second opening 164 is removed by means of patterning, and an organic photoresist layer 170 within the first opening 163 and the second opening 164 is retained.

[0049] In a second embodiment, referring to FIG. 5 (c2), a layer of organic photoresist is formed on the pixel define film 160, the organic photoresist outside the first opening 163 and the second opening 164 and a part of the organic photoresist in the second opening 164 are removed by means of patterning, and an organic photoresist layer 170 in the first opening 163 and a part of the organic photoresist layer 170 in the second opening 164 are retained.

[0050] In step S2, the organic photoresist layer can be removed using oxygen by means of patterning, such as ashing.

[0051] Step S3: Perform fluorinated plasma treatment on the pixel define film outside the opening such that the pixel define film outside the opening forms a first pixel define layer having a hydrophilic surface layer, and the remaining pixel define film forms a hydrophobic second pixel define layer. In detail, step S3 includes steps as follows.

[0052] Referring to (d1) and (d2) in FIG. 5, the pixel define film 160 that is not covered and protected by the organic photoresist layer 170 and outside the first opening 163 and the second opening 164 is treated using a fluorinated plasma gas, and the pixel define film 160 after being treated by the fluorinated plasma gas is hydrophobic. The hydrophilic pixel define film 160 that has not been treated by the fluorinated plasma gas forms the first pixel define layer 161, and the hydrophobic pixel define film 160 that has been treated by the fluorinated plasma gas forms the second pixel define layer 162.

[0053] In the first embodiment, the fluorinated plasma gas processes the pixel define film 160 from the upper surface. Therefore, a certain thickness of the pixel define film 160 after being treated by the fluorinated plasma gas maintains uniformity. The pixel define film has a same thickness at all positions, as shown in (d1) in FIG. 5 and FIG. 2.

[0054] In the second embodiment, a top surface of the organic photoresist layer 170 is lower than the top surface of the pixel define film 160. The fluorinated plasma gas treats the pixel define film 160 from the upper surface of the pixel define film 160 and the side of the second opening 164. Therefore, the pixel define film 160 has a larger thickness at an outer periphery 1641 of the second opening 164 than outside the outer periphery 1642 of the second opening 164 after being treated by the fluorinated plasma gas, as shown in (d2) in FIG. 5 and FIG. 3.

[0055] Step S4: Remove the organic photoresist in the opening. In detail, step S4 includes steps as follows.

[0056] Referring to (e1) and (e2) in FIG. 5, the remaining organic photoresist is stripped to remove the remaining organic photoresist in the first opening 163 and the second opening 164.

[0057] In the method for preparing a display panel provided in the embodiment of the present disclosure, the preparation method is to adopt a set of half-tone masks, a first pixel define layer having a hydrophilic surface and a second pixel define layer having a hydrophobic surface are formed using a photolithography process and a fluorinated plasma treatment process, which simplifies the preparation process and reduces a number of times for photolithography.

[0058] In an embodiment, the present disclosure further provides a display panel. The display panel is prepared using the method for preparing a display panel provided in any embodiment of the present disclosure. Referring to FIG. 2 and FIG. 3, FIG. 2 is a schematic diagram of a first structure of a display panel according to an embodiment of the present disclosure, and FIG. 3 is a schematic diagram of a second structure of the display panel according to an embodiment of the present disclosure. As shown in FIG. 2, the display panel provided in the embodiment of the present disclosure includes: [0059] a base plate; and [0060] a pixel define film 160, disposed on the base plate and on which a step-shaped opening is formed, wherein the opening includes a first opening 163 and a second opening 164, the second opening 164 is located on a side of the first opening 163 that is away from the base plate, and a step surface is formed at a joint between the second opening 164 and the first opening 163; [0061] the pixel define film 160 includes: [0062] a first pixel define layer 161, disposed on the base plate; and [0063] a second pixel define layer 162, disposed on a side of the first pixel define layer 161 that is away from the base plate and located outside the opening.

[0064] In detail, referring to FIG. 2 and FIG. 3, in the display panel provided in the embodiment of the present application, the base plate is an array base plate, and includes a substrate 110, a thin film transistor layer 120, a passivation layer 130, a planarization layer 140, and an anode layer 150 that are stacked in sequence.

[0065] In an embodiment, the first pixel define layer 161 is hydrophobic, and the second pixel define layer 162 is hydrophobic.

[0066] In an embodiment, the second pixel define layer 162 has a same thickness at all positions.

[0067] In an embodiment, the second pixel define layer 162 has a larger thickness at an outer periphery 1641 of the second opening 164 than outside the outer periphery 1642 of the second opening 164.

[0068] Correspondingly, an embodiment of the present disclosure further provides a display device. The display device includes the display panel provided in any one of the embodiments of the present disclosure, and has the technical features and technical effects of any one of the display panels provided in the embodiments of the present disclosure. For implementation and operating principles, refer to the above detailed embodiments, and details are not described herein again.

[0069] Based on the above, the embodiments of the present disclosure provide a display panel and a preparation method therefor and a display device. The preparation method includes steps of: preparing a pixel define film on a base plate, and forming a step-shaped opening on the pixel define film using a patterning process, wherein the opening includes a first opening and a second opening, the second opening is located on a side of the first opening that is away from the base plate, and a step surface is formed at a joint between the second opening and the first opening; forming an organic photoresist in the opening, wherein the organic photoresist covers the step surface; performing fluorinated plasma treatment on the pixel define film outside the opening such that the pixel define film outside the opening forms a first pixel define layer having a hydrophilic surface layer, and the remaining pixel define film forms a hydrophobic second pixel define layer; and removing the organic photoresist in the opening. According to the embodiments of the present disclosure, a first pixel define layer having a hydrophilic surface and a second pixel define layer having a hydrophobic surface are formed using a photolithography process and a fluorinated plasma treatment process, which simplifies the preparation process and reduces a number of times for photolithography.

[0070] A display panel and a method for preparing same, and a display device provided in the embodiments of the present disclosure are described above in detail. Although the principles and implementations of the present disclosure are described by using specific examples in this specification, the descriptions of the foregoing embodiments are merely used for helping understand the method and the core idea of the method of the present disclosure. Meanwhile, a person of ordinary skill in the art can make modifications to the specific implementations and application range according to the ideas of the present disclosure. In conclusion, the content of the specification is not to be construed as a limitation to the present disclosure.