Solid state imaging apparatus and method of producing the same

Abstract

There is provided a solid state imaging apparatus, including: an optical film layer on which a solid state image sensor is mounted; a multifunctional chip laminated at a periphery of the solid state image sensor in the optical film layer being electrically contacted with the optical film layer via a metal body; a sealing resin layer for sealing the periphery where the multifunctional chip is laminated on the optical film layer; and a concave structure for blocking a flow of the sealing resin in a liquid state when the sealing resin layer is formed at the periphery of the sealing resin layer. Also, a method of producing the solid state imaging apparatus is also provided.

Claims

1. A solid state imaging apparatus comprising: a solid state image sensor including an optical pixel region; a metal body; and a peripheral circuit region positioned at a periphery of the optical pixel region, the peripheral circuit region including a multifunctional chip being electrically connected to the optical pixel region via the metal body; a sealing resin layer formed with a sealing resin and seals the multifunctional chip in the peripheral circuit region; and a concave structure configured to inhibit a flow of the sealing resin in a liquid state when the sealing resin layer is formed; wherein the concave structure configured to inhibit the flow of the sealing resin in the liquid state includes a scoop portion having a scooping surface that surrounds the multifunctional chip, and wherein the concave structure that is configured to inhibit the flow of the sealing resin in the liquid state is formed only by an optical film layer of the solid state image sensor.

2. The solid state imaging apparatus according to claim 1, further comprising: a plurality of concave structures including the concave structure, the plurality of concave structures are configured to inhibit the flow of the sealing resin in the liquid state.

3. The solid state imaging apparatus according to claim 1, wherein an inner wall of the concave structure configured to inhibit the flow of the sealing resin in the liquid state has the scooping surface with a tilt angle of about 60 to 90 degrees.

4. A solid state imaging apparatus comprising: a solid state image sensor including an optical pixel region; a metal body; and a peripheral circuit region positioned at a periphery of the optical pixel region, the peripheral circuit region including a multifunctional chip being electrically connected to the optical pixel region via the metal body; a sealing resin layer formed with a sealing resin and seals the multifunctional chip in the peripheral circuit region; and a concave structure configured to inhibit a flow of the sealing resin in a liquid state when the sealing resin layer is formed, wherein the concave structure that is configured to inhibit the flow of the sealing resin in the liquid state includes a scoop portion having a scooping surface, and wherein a depth of the scoop portion is based on a wiring position relative to the scoop portion.

5. The solid state imaging apparatus according to claim 1, wherein the scoop portion forms a pattern that surrounds the multifunctional chip.

6. A method of producing a solid state imaging apparatus, the method comprising: forming an optical pixel region of a solid state image sensor; forming a metal body of the solid state image sensor; and forming a peripheral circuit region of the solid state image sensor positioned at a periphery of the optical pixel region by forming a concave structure that is configured to inhibit a flow of a sealing resin in a liquid state; laminating a multifunctional chip in a state that the multifunctional chip is electrically connected to the optical pixel region via the metal body; and sealing the multifunctional chip by applying the sealing resin in the liquid state and curing the sealing resin to form a sealing resin layer that seals the multifunctional chip; and wherein forming the concave structure that is configured to inhibit the flow of the sealing resin in the liquid state includes scooping only an optical film layer of the solid state image sensor.

7. The method of producing the solid state imaging apparatus according to claim 6, wherein forming the concave structure that is configured to inhibit the flow of the sealing resin in the liquid state includes forming a scoop portion including a scooping surface that surrounds the multifunctional chip.

8. The method of producing the solid state imaging apparatus according to claim 7, wherein the scoop portion forms a pattern that surrounds the multifunctional chip.

9. The method of producing the solid state imaging apparatus according to claim 6, wherein forming the concave structure that is configured to inhibit the flow of the sealing resin in the liquid state includes forming an inner wall of the concave structure to have a scooping surface with a tilt angle of about 60 to 90 degrees.

10. The method of producing the solid state imaging apparatus according to claim 6, further comprising: forming a plurality of concave structures including the concave structure, the plurality of concave structures are configured to inhibit the flow of the sealing resin in the liquid state.

11. A method of producing a solid state imaging apparatus, the method comprising: forming an optical pixel region of a solid state image sensor; forming a metal body of the solid state image sensor; and forming a peripheral circuit region of the solid state image sensor positioned at a periphery of the optical pixel region by forming a concave structure that is configured to inhibit a flow of a sealing resin in a liquid state; laminating a multifunctional chip in a state that the multifunctional chip is electrically connected to the optical pixel region via the metal body; and sealing the multifunctional chip by applying the sealing resin in the liquid state and curing the sealing resin to form a sealing resin layer that seals the multifunctional chip, wherein forming the concave structure that is configured to inhibit the flow of the sealing resin in the liquid state includes forming a scoop portion including a scooping surface, and wherein a depth of the scoop portion is based on a wiring position relative to the scoop portion.

12. An electronic apparatus comprising: a solid state image sensor including an optical pixel region; a metal body; and a peripheral circuit region positioned at a periphery of the optical pixel region, the peripheral circuit region including a multifunctional chip being electrically connected to the optical pixel region via the metal body; a sealing resin layer formed with a sealing resin and seals the multifunctional chip in the peripheral circuit region; and a concave structure configured to inhibit a flow of the sealing resin in a liquid state when the sealing resin layer is formed; wherein the concave structure configured to inhibit the flow of the sealing resin in the liquid state includes a scoop portion having a scooping surface that surrounds the multifunctional chip; and wherein the concave structure that is configured to inhibit the flow of the sealing resin in the liquid state is formed only by an optical film layer of the solid state image sensor.

13. The electronic apparatus according to claim 12, wherein an inner wall of the concave structure configured to inhibit the flow of the sealing resin in the liquid state has the scooping surface with a tilt angle of about 60 to 90 degrees.

14. The electronic apparatus according to claim 12, further comprising: a plurality of concave structures including the concave structure, the plurality of concave structures are configured to inhibit the flow of the sealing resin in the liquid state.

15. An electronic apparatus comprising: a solid state image sensor including an optical pixel region; a metal body; and a peripheral circuit region positioned at a periphery of the optical pixel region, the peripheral circuit region including a multifunctional chip being electrically connected to the optical pixel region via the metal body; a sealing resin layer formed with a sealing resin and seals the multifunctional chip in the peripheral circuit region; and a concave structure configured to inhibit a flow of the sealing resin in a liquid state when the sealing resin layer is formed wherein the concave structure that is configured to inhibit the flow of the sealing resin in the liquid state includes a scoop portion having a scooping surface, and wherein a depth of the scoop portion is based on a wiring position relative to the scoop portion.

16. The solid state imaging apparatus according to claim 1, wherein the concave structure is a single concave structure.

17. The method of producing the solid state imaging apparatus according to claim 6, wherein the concave structure is a single concave structure.

18. The electronic apparatus according to claim 12, wherein the concave structure is a single concave structure.

Description

BRIEF DESCRIPTION OF DRAWINGS

(1) FIGS. 1A and 1B each is a view for illustrating a configuration embodiment of a general solid state image sensor chip;

(2) FIG. 2 is a view for illustrating a configuration embodiment of a solid state image sensor chip according to an embodiment of the present technology;

(3) FIG. 3 is a view for illustrating a small sized solid state image sensor according to an embodiment of the present technology;

(4) FIG. 4 is a view for illustrating conditions for blocking a flow of a sealing resin in view of a relationship between a coating amount of a sealing resin and a distance from a multifunctional chip to a flow blocking structure;

(5) FIG. 5 is a graph showing a relationship between a coating amount of a sealing resin and a distance from a multifunctional chip to a flow blocking structure;

(6) FIGS. 6A and 6B each is a view for illustrating a difference in a stray light between a general solid state image sensor chip and a solid state image sensor chip according to an embodiment of the present technology;

(7) FIGS. 7A and 7B each is a 3D graph for illustrating a difference in a stray light between a general solid state image sensor chip and a solid state image sensor chip according to an embodiment of the present technology; and

(8) FIG. 8 is a flow chart for illustrating a method of producing a solid state image sensor chip according to an embodiment of the present technology.

DETAILED DESCRIPTION OF EMBODIMENTS

(9) Hereinafter, an embodiment of the present technology will be described with reference to the drawings.

(10) FIGS. 1A and 1B each shows a side cross-sectional view for simulating a configuration of a general solid state image sensor chip used in a solid state imaging apparatus.

(11) As shown in FIG. 1A, the general solid state image sensor chip includes silicon (Si) and a wiring 11 on the silicon, a peripheral circuit region 21a and an optical pixel region 21b constituting a solid state image sensor 21 as an optical film layer disposed thereon, and a wire bond region where a wire 22 for outputting an pixel signal generated from the image sensor disposed on the optical pixel region 21b is connected. In the optical pixel region 21b, each image sensor is disposed per pixel, and each color filter RGB (Red, Green, Blue) and each on-chip lens are disposed thereon. Each image sensor generates a pixel signal by photoelectric conversion once an incident light is received, and outputs the pixel signal to a signal processing circuit disposed at the peripheral circuit region 21a. The peripheral circuit region 21a includes the signal processing circuit for carrying out a predetermined processing of the pixel signal supplied from the image sensor disposed on the optical pixel region 21b per pixel. The signal processing circuit carries out a variety of processes to the pixel signal, and outputs the pixel signal via the wire 22 bonded at the wire bond region.

(12) As a recent progress in a signal processing technology, a demand for carrying out a more advanced and complex signal processing is increased in a pixel signal. However, when a two dimensional circuit is formed on the peripheral circuit region 21a, a more wider flat space and a complex configuration are physically necessary in order to carry out the more advanced and complex signal processing. In order to provide a large and complex circuit, a far wider peripheral circuit region 21a is necessary. As a result, a whole solid state image sensor chip may be grown in size. In addition, the method of producing the whole solid state image sensor includes a process for configuring each image sensor at the peripheral circuit region 21a and a process for configuring each circuit at the peripheral circuit region 21a. Thus, a production yield may be decreased.

(13) In order to provide a large and complex circuit on the peripheral circuit region 21a, to reduce a two dimensional space and to improve the production yield, it has been proposed that a multifunctional chip 31 including a signal processing circuit produced by a separate step is laminated on the peripheral circuit region 21a, as shown in FIG. 1B.

(14) Specifically, in FIG. 1B, the multifunctional chip 31 produced in a three dimension form by the separate step is laminated in the peripheral circuit region 21a instead of the two dimensional signal processing circuit. The multifunctional chip 31 is electrically connected to the peripheral circuit region 21a via a metal wiring 34, carries out a predetermined processing to a pixel signal supplied from the image sensor disposed at the optical pixel region 21b, and outputs the pixel signal via the wire 22 bonded at the wire bond region.

(15) In more detail, the multifunctional chip 31 is sealed with a sealing resin layer 32 therearound, and the metal wiring 34 is housed therein. Furthermore, a convex structure 33 for blocking a flow that is necessary for an injection of the sealing resin is disposed around and surrounds the sealing resin layer 32. The convex structure 33 for blocking a flow functions as a dam structure for damming the flow of the sealing resin while the sealing resin is injected in a liquid state and is cured. As a result, the convex structure 33 for blocking a flow prevents the sealing resin in a liquid state from diffusing and contaminating the optical pixel region 21b in the production step until the liquid sealing resin is cured.

(16) In this manner, the multifunctional chip 31 is laminated at the peripheral circuit region 21a. The peripheral circuit region 21a requires no more space so long as an area for laminating the multifunctional chip 31 is ensured. It is possible to reduce a total size of the solid state image sensor even if the circuit configuration becomes complex.

(17) However, when the multifunctional chip 31 is laminated in the peripheral circuit area 21a, 50 m is necessary for disposing the convex structure 33 for blocking a flow as a space (a width of the convex structure 33 for blocking a flow) for disposed in the convex structure 33 for blocking a flow. In addition, as a placement accuracy, 30 m is necessary and, as a width accuracy, 10 m is necessary, for example. In summary, about 90 m of a width (=(50+10+30) m) is necessary in total for the convex structure 33 for blocking a flow per line. Thus, as a total size of the multifunctional chip 31 and the flow blocking structure is essential, the solid state image sensor chip cannot be smaller anymore.

(18) As the convex structure 33 for blocking a flow is disposed near the optical pixel region 21b but is projected from a surface of the peripheral circuit region 21a, a part of the incident light is reflected to produce a so-called reflection stray light. The stray light is incident on the image sensor disposed at the optical pixel region 21b. Thus, the optical properties of the solid state image sensor are decreased.

(19) [Structure of Solid State Image Sensor Chip to which the Present Technology is Applied]

(20) FIG. 2 is a view for illustrating a configuration embodiment of a solid state image sensor chip used in a solid state imaging apparatus to which the present technology is applied. Specifically, as described above, in the solid state image sensor chip to which the present technology is applied, as shown in FIG. 2, a concave structure 41 for blocking a flow is disposed instead of the convex structure 33 for blocking a flow. In FIG. 2, configurations having the same functions as those in FIG. 1 are denoted by the same names and reference numerals, and thus detailed description thereof will be hereinafter omitted.

(21) In other words, as shown in FIG. 2, in the solid state image sensor chip to which the present technology is applied, the concave structure 41 for blocking a flow is disposed instead of the convex structure 33 for blocking a flow.

(22) The concave structure 41 for blocking a flow is a scoop portion disposed surrounding the multifunctional chip 31 in the peripheral circuit region 21a, as shown in a lower right view of FIG. 2. The scoop portion of the concave structure 41 for blocking a flow has a tilt angle 41a to the surface of the peripheral circuit region 21a of about 60 to 90 degrees. The scoop portion of the concave structure 41 for blocking a flow can have the tilt angle 41a to the surface of the peripheral circuit region 21a of 90 degrees by scooping by dry etching in a wafer production step.

(23) By configuring in this manner, in a step of forming the sealing resin layer 32, the sealing resin to be diffused flows into the scoop portion of the concave structure 41 for blocking a flow until the sealing resin in a liquid state is cured. As a result, as the sealing resin in a liquid state does not flow outside a range surrounded by the concave structure 41 for blocking a flow until curing, it is possible to inhibit an outflow of the sealing resin and contamination of the optical pixel region 21b by the sealing resin.

(24) As shown in FIG. 3, a width of the scoop portion for the concave structure 41 for blocking a flow may be about 3 m as opposed to that of the convex structure 33 for blocking a flow is 50 m, for example. In this way, the necessary width can be 1/10 or less. As the concave structure 41 for blocking a flow can be produced by dry etching in a wafer production step, a placement accuracy can be about 1 m and a width accuracy can be about 0.5 m. As a result, a necessary space width will be 4.5 m (=(3+1+0.5) m) per line in addition to the width of the solid state image sensor chip. Thus, the width necessary for laminating the multifunctional chip 31 can be reduced 90% or more excluding the width of the multifunctional chip 31.

(25) [Distance from Multifunctional Chip to Flow Blocking Structure]

(26) By using the concave structure 41 for blocking a flow, it is possible to reduce a distance from an end of the multifunctional chip 31 to a position of the concave structure 41 for blocking a flow. In other words, as shown in an upper part of FIG. 4, the concave structure 41 for blocking a flow is disposed for the sealing resin layer 32. In a lower part of FIG. 4, there are shown a corner 41a (hereinafter referred to as an angle 41a of the scoop portion) at an end of the concave structure 41 for blocking a flow, and a contact angle between a surface of the peripheral circuit region 21a and the sealing resin (in a liquid state) before curing. At the contact angle , a surface tension of the peripheral circuit region 21a equals to a sum of a frictional force 1 of the angle 41a of the scoop portion and a surface tension 2 of the sealing resin before curing x cos . Accordingly, when the contact angle =90 degrees, cos =0. Then, the surface tension 2 of the sealing resin before curing is 0. As the surface tension of the peripheral circuit region 21a equals to the frictional force 1 of the angle 41a of the scoop portion, the sealing resin before curing does not flow into the concave structure 41 for blocking a flow.

(27) Based on the above description, FIG. 5 shows a relationship between a distance from the end of the multifunctional chip 31 to the structure for blocking a flow and a maximum coating amount of the sealing resin not exceeding the structure for blocking a flow, when a surface of a test chip is formed of silicon oxide (SiO.sub.2) and after the sealing resin is cured. In FIG. 5, square marks represent the relationship between a distance from the end of the multifunctional chip 31 to the concave structure 41 for blocking a flow according to an embodiment of the present technology and a coating amount of the sealing resin not exceeding the concave structure 41 for blocking a flow. The sample used is a resin having a viscous property of a contact angle of 10 to 12 degrees on a surface of silicon nitride (SiN) at 25 C. Circle marks represent the relationship between a distance from the end of the multifunctional chip 31 to the convex structure 33 for blocking a flow and the coating amount of the sealing resin not exceeding the convex structure 33 for blocking a flow, when other sample resin having a viscous property of a contact angle of 15 to 16 degrees on the surface. Cross marks represent that the sealing resin exceeded the structure for blocking a flow to contaminate the optical pixel region 21b.

(28) As shown in the square marks in FIG. 5, when the concave structure 41 for blocking a flow is used, the sealing resin does not overflow at the distance from the end of the multifunctional chip 31 and the concave structure 41 for blocking a flow of less than 200 m even though the coating amount of the resin exceeds 2.5 mg. On the other hand, when the convex structure 33 for blocking a flow represented by the triangle and circle marks is used, the distance from the end of the multifunctional chip 31 to the convex structure 33 for blocking a flow is limited to about 400 m, and the coating amount of the sealing resin is limited to about 0.2 mg. Accordingly, if the distance from the end of the multifunctional chip 31 to the concave structure 41 for blocking a flow is decreased and the coating amount of the sealing resin is increased, the sealing resin will not exceed the concave structure 41 for blocking a flow and the optical pixel region 21b will be therefore not contaminated. It is possible to decrease the area itself necessary for laminating the multifunctional chip 31. As a result, a small sized solid state image sensor can be provided.

(29) [Effects on Reflection Stray Light]

(30) As shown in FIG. 6A, the peripheral circuit region 21a is disposed adjacent to the optical pixel region 21b, and the multifunctional chip 31 is laminated within the peripheral circuit region 21a. FIGS. 7A and 7B show light intensity distributions (irradiance distributions) of a stray light of the optical pixel region 21b using the convex structure 33 for blocking a flow and the concave structure 41 for blocking a flow.

(31) FIGS. 7A and 7B show light intensity distributions (irradiance distributions) in respective coordinates where the optical pixel area 21b is represented by an XY plane, when light beams L1 are emitted from a halogen light source and are transmitted through a lens group 101 to irradiate the solid state image sensor chip. FIG. 7A shows the distribution where the convex structure 33 for blocking a flow is used. In this case, the convex structure 33 for blocking a flow is formed of a metal material (Sn) in a semispherical shape having a diameter of 50 m, as shown in an upper part of FIG. 6B. On the other hand, FIG. 7B shows the distribution where the concave structure 41 for blocking a flow is used. In this case, the concave structure 41 for blocking a flow is formed as the scoop portion having a width of 3 m and a depth of 1 m, as shown in a lower part of FIG. 6B. In either case, a shortest distance from the end of the multifunctional chip 31 to an effective pixel in the optical pixel region 21b is 50 m.

(32) In the distribution shown in FIG. 7A where the convex structure 33 for blocking a flow is used, a strong peak appears around a center of the optical pixel region 21b, which reveals that a reflection stray light is detected at all over the optical pixel region 21b. In contrast, in the distribution shown in FIG. 7B where the concave structure 41 for blocking a flow is used, it reveals that no reflection stray light is detected at about half of the optical pixel region 21b. From the comparison, by using the concave structure 41 for blocking a flow, it is apparent that the reflection stray light is decreased, as a whole. As to a depth of the scoop portion in the concave structure 41 for blocking a flow, effects on wiring may be considered such that the depth may be changed depending on a wiring position, i.e., on a wiring or between wirings.

(33) [Production Process]

(34) Next, referring to a flow chart shown in FIG. 8, a method of producing a solid state image sensor chip having the concave structure 41 for blocking a flow will be described.

(35) In a step S11, the optical pixel region 21b is formed.

(36) In a step S12, the concave structure 41 for blocking a flow is formed by dry etching to form the scoop portion such that an area where the multifunctional chip 31 is laminated is surrounded.

(37) In a step S13, the multifunctional chip 31 is laminated on the peripheral circuit region 21a in a state that the multifunctional chip 31 is electrically connected to the peripheral circuit region 21a via the metal wiring 34.

(38) In a step S14, the sealing resin is applied to an area surrounded by the multifunctional chip 31 laminated on the peripheral circuit region 21a and the concave structure 41 for blocking a flow disposed surrounding the multifunctional chip 31, and is dammed by the concave structure 41 for blocking a flow. In this way, the sealing resin is filled, and cured by irradiating ultraviolet rays or applying an auxiliary heat to form the sealing resin layer 32.

(39) Through the steps as described above, the solid state image sensor chip having the concave structure 41 for blocking a flow shown in FIG. 2 is produced.

(40) Although it is described that only one concave structure 41 for blocking a flow surrounds the multifunctional chip 31, a plurality of concave structures 41 for blocking a flow having the same configuration may surround multiply the multifunctional chip 31. In this way, even if the coating amount of the sealing resin for the sealing resin layer 32 is further increased, it can prevent the sealing resin from diffusing until the sealing resin is cured. Thus, the contamination of the optical pixel region 21b can be certainly prevented.

(41) In the solid state image sensor chip having the concave structures 41 for blocking a flow produced through the above-described steps shown in FIG. 2, the space for blocking a flow can be reduced, thereby reducing the size. For example, when the solid image sensor for forming the optical pixel region 21b has a size of 1111 mm and the multifunctional chip 31 has a size of 1.510 mm, the space can be reduced by about 4%.

(42) As the distance from the multifunctional chip 31 to the optical pixel region 21b can be reduced, a mounted area of the multifunctional chip 31 can be reduced. For example, when the multifunctional chip 31 has a size of 1.510 mm, a combined value of a placement accuracy, a width accuracy and a width of the concave structure for blocking a flow can be reduced by about 3%.

(43) Furthermore, as the size of each solid state image sensor chip can be reduced, the number of the solid state image sensor chips produced from one wafer can be increased to improve a production efficiency and decrease the costs. For example, when the solid state image sensor has a size of 1111 mm, the number of the solid state image sensor chips can be increased by 3.2% in a 300 mm wafer as compared to that in the related art. Similarly, when the solid state image sensor chip has a size of 66 mm, the number can be increased by 6.2%.

(44) In addition, as the concave structure for blocking a flow has the contact angle of the sealing resin greater than that of the convex structure for blocking a flow, it is possible to a greater tolerance can be set about a coating amount variability of the sealing resin. For example, in the concave structure for blocking a flow, the tolerance for the coating amount variability is about 10%, but in the convex structure for blocking a flow, the tolerance for the coating amount variability can be about 20%.

(45) Still further, the reflection stray light to be incident can be decreased from the flow block to the optical pixel region, thereby providing a higher image quality.

(46) The present technology may have the following configurations.

(47) (1) A solid state imaging apparatus, including:

(48) an optical film layer on which a solid state image sensor is mounted;

(49) a multifunctional chip laminated at a periphery of the solid state image sensor in the optical film layer being electrically contacted with the optical film layer via a metal body;

(50) a sealing resin layer for sealing the periphery where the multifunctional chip is laminated on the optical film layer; and

(51) a concave structure for blocking a flow of the sealing resin in a liquid state when the sealing resin layer is formed at the periphery of the sealing resin layer.

(52) (2) The solid state imaging apparatus according to (1) above, in which

(53) the concave structure for blocking a flow is a scoop portion configured by scooping a surface surrounding the multifunctional chip.

(54) (3) The solid state imaging apparatus according to (2) above, in which

(55) the concave structure for blocking a flow is configured by multiply surrounding the multifunctional chip.

(56) (4) The solid state imaging apparatus according to (2) above, in which

(57) the concave structure for blocking a flow is formed by scooping only the optical film layer by dry etching in a wafer production step.

(58) (5) The solid state imaging apparatus according to (2) above, in which

(59) an inner wall of the concave structure for blocking a flow is scooped surrounding the periphery of the optical film layer at a tilt angle of about 60 to 90 degrees.

(60) (6) The solid state imaging apparatus according to (1) above, in which

(61) the optical film layer has different shapes on a wiring and between wirings formed by the scoop portion of the optical film layer.

(62) (7) The solid state imaging apparatus according to (1) above, in which

(63) the scoop portion of the optical film layer has a pattern surrounding the multifunctional chip laminated.

(64) (8) A method of producing a solid state imaging apparatus including an optical film layer on which a solid state image sensor is mounted; a multifunctional chip laminated at a periphery of the solid state image sensor in the optical film layer being electrically contacted with the optical film layer via a metal body; a sealing resin layer for sealing the periphery where the multifunctional chip is laminated on the optical film layer; and a concave structure for blocking a flow of the sealing resin in a liquid state when the sealing resin layer is formed at the periphery of the sealing resin layer, including:

(65) forming the optical film layer;

(66) forming a concave structure for blocking a flow to surround a periphery of the multifunctional chip laminated;

(67) laminating the multifunctional chip on the optical film layer; and

(68) applying and curing the sealing resin to form the sealing resin layer surrounded by the multifunctional chip.

(69) It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and alterations may occur depending on design requirements and other factors insofar as they are within the scope of the appended claims or the equivalents thereof.