There is provided a radiation image pickup unit including: a plurality of pixels each configured to generate a signal charge based on a radiation; a device substrate including a photoelectric conversion element for each pixel; a wavelength conversion layer provided on a light incident side of the device substrate, and configured to convert a wavelength of the radiation into other wavelength; and a partition wall separating the wavelength conversion layer for each pixel. The radiation image pickup unit is configured to allow a gap between the wavelength conversion layer and the device substrate to be equal to or larger than a threshold or equal to or smaller than the threshold, the threshold being preset based on a spatial frequency of an image pickup target.

A waveform shaping filter according to one embodiment includes a first resistor, a first transistor, a first capacitor, and a first amplifier. The first resistor includes one end to which a signal current is input and the other end. The first transistor includes a first terminal connected to the other end of the first resistor, a second terminal, and a control terminal. The first capacitor includes one end connected to the other end of the first resistor and the other end. The first amplifier includes an input terminal connected to the one end of the first resistor and an output terminal connected to the control terminal of the first transistor.

A detector configuration that combines a plurality of elongated semiconductor photo-multiplier sensor strips coupled to a scintillator crystal block with a differential readout that will enhance the time resolution. This is permitted due to a reduction of electronic noise due to reduced cross talk and noise in the ground. In addition, the dead area is minimized and thus the efficiency of the photodetector is enhanced.

A photon-counting X-ray computed tomography (CT) apparatus of an embodiment includes photon-counting CT detection circuitry, integral CT detection circuitry, switching circuitry, and a feedback capacitance. Photon-counting CT detection circuitry outputs count values for respective energy bins, based on voltage pulses output from a feedback capacitance with electric charges output from an X-ray detection element configured to detect incident X-rays. Integral CT detection circuitry outputs an integral value, based on the voltage pulses output from the feedback capacitance with the electric charges output from the X-ray detection element. Switching circuitry switches between a case of transmitting the electric charges output from the X-ray detection element to the photon-counting CT detection circuitry and a case of transmitting the electric charges output from the X-ray detection element to the integral CT detection circuitry. The feedback capacitance is connected with the photon-counting CT detection circuitry and the integral CT detection circuitry in parallel.

A flat pixel (20) is a single unit composing a radiation detector and is configured so as to be divided into at least four subpixels (21) such that even if a prescribed number of subpixels (21) are removed from each pixel (20) in order of largest effective area, the centroid (51) of the effective area of the entirety of the remaining subpixels (21) is positioned within a similar-shape region (30) having the same centroid (50) as the pixel (20) and having sides of lengths that are half those of the pixel (20).

A radiation counting device is provided that includes a scintillator, a pixel circuit, and an analog-to-digital conversion circuit. In the radiation counting device, the scintillator generates a photon when radiation is incident. In the radiation counting device, the pixel circuit converts the photon into charge, stores the charge over a predetermined period, and generates an analog voltage in accordance with the amount of stored charge. In the radiation counting device, the analog-to-digital conversion circuit converts the analog voltage into a digital signal in a predetermined quantization unit less than the analog voltage generated from the one photon.

A digital X-ray imaging system is provided. The digital X-ray imaging system includes an X-ray source and a digital X-ray detector. The digital X-ray detector includes a scintillator configured to absorb radiation emitted from the X-ray source and to emit optical photons in response to the absorbed radiation. The digital X-ray detector also includes multiple pixels, each pixel including a pinned photodiode and at least two charge-storage capacitors coupled to the pinned photodiode, wherein each pixel is configured to absorb the optical photons emitted by the scintillator and each pinned photodiode is configured to generate a photocharge in response to the absorbed optical photons. The digital X-ray detector further includes control circuitry coupled to each pixel of the multiple pixels and configured to selectively control a respective flow of the photocharge generated by the pinned photodiode to a respective charge-storage capacitor of the at least two charge-storage capacitors during integration.

A radiation image capturing apparatus includes a pixel array including conversion elements arranged in rows and columns on an optically transparent substrate, signal lines that outputs a signal generated by the conversion elements and that extends in a column direction, a first scintillator disposed near a first surface of the substrate, and a second scintillator disposed near a second surface of the substrate opposite the first surface. The conversion elements include first conversion elements and second conversion elements. A light shielding layer is disposed between the first scintillator and the second conversion elements such that an amount of light that is received by the second conversion elements from the first scintillator is smaller than that received by the first conversion elements. A number of columns of the conversion elements is equal to a number of the signal lines.

A semiconductor photomultiplier (SPM) device is described. The SPM comprises a plurality of photosensitive elements, a first electrode arranged to provide a bias voltage to the photosensitive elements, a second electrode arranged as a biasing electrode for the photosensitive elements, a plurality of quench resistive elements each associated with a corresponding photosensitive element, a plurality of output loads each having a capacitive load operably coupled to a resisitive load in a parallel configuration between first and second nodes; each first node is common to one of the photosensitive elements and the corresponding quench element; and a third electrode coupled to the second nodes of the output loads to provide an output signal from the photosensitive elements. The outputs loads fully or partially correct an overshoot of an output signal on the third electrode.

It is an object of the invention to secure a large area of a photodiode and suppress operation property variation and malfunction in an imaging panel and an X-ray imaging device. An imaging panel (10) includes a substrate (40), a TFT (14), an interlayer insulating film (44), a metal layer (45), and a photodiode (15). A data line (12) and the photodiode (15) face each other in a thickness direction of the substrate. The interlayer insulating film (44), which is disposed between the TFT (14) and the photodiode (15), is an SOG film or a photosensitive resin film.