Provided is an electroluminescence display device including, on a substrate, a plurality of pixels having a light emitting layer made of an electroluminescent material obtained by adding a dopant to a host material, and a bank that separates the adjacent pixels and has been subjected to bleaching processing, in which within the plane of the substrate, the concentration of the dopant in the light emitting layer is distributed and the intensity of the bleaching processing performed on the bank is distributed.

An OLED device comprises an anode and a cathode, and at least one graded emissive layer disposed between the anode and the cathode, the graded emissive layer comprising first and second materials, wherein a concentration of the first material increases continuously from an anode side of the graded emissive layer to a cathode side of the graded emissive layer, and a concentration of the second material decreases continuously from the anode side of the graded emissive layer to the cathode side of the graded emissive layer. An OLED device comprising a graded emissive layer and a hybrid white OLED device are also described.

A luminescent panel includes an upper sealing layer, a lower sealing layer, and an organic electroluminescent layer. The organic electroluminescent layer is provided between the upper sealing layer and the lower sealing layer and includes one or a plurality of organic electroluminescent elements. At least one of the upper sealing layer or the lower sealing layer includes one or a plurality of inorganic sealing films each provided with a plurality of fracture control parts. The fracture control parts each include an inorganic material having relatively lower mechanical strength than parts of the one or plurality of inorganic sealing films other than the fracture control parts.

A flexible display panel and a display device are provided. The flexible display panel includes a flexible substrate, and an inorganic film layer located on the flexible substrate. The inorganic film layer includes a first portion and a second portion. The first portion is connected with the second portion, and the first portion has a first thickness T1. Further, the second portion has a second thickness T2, and T1<T2, and the first portion includes at least one first sub-portion and at least one second sub-portion. The first sub-portion is smoothly connected with the second sub-portion at a boundary line extending in a first direction, and from the boundary line, a dimension of the second sub-portion in the first direction gradually changes in a direction away from the first sub-portion.

Provided is an organic light-emitting diode comprising a substrate, an anode layer, optionally one or more hole injection layers, one or more hole transport layers, optionally one or more electron blocking layers, an emitting layer, optionally one or more hole blocking layers, optionally one or more electron transport layers, an electron injection layer, and a cathode, wherein either the hole injection layer, or the hole transport layer, or both of the hole injection layer and the hole transport layer, or a layer that functions as both a hole injection layer and a hole transport layer, comprises a polymer that comprises one or more triaryl aminium radical cations having the structure (S1) wherein each of R.sup.11, R.sup.12, R.sup.13, R.sup.14, R.sup.15, R.sup.21, R.sup.22, R.sup.23, R.sup.24, R.sup.25, R.sup.31, R.sup.32, R.sup.33, R.sup.34, and R.sup.35 is independently selected from the group consisting of hydrogen, deuterium halogens, amine groups, hydroxyl groups, sulfonate groups, nitro groups, and organic groups, wherein two or more of R.sup.11, R.sup.12, R.sup.13, R.sup.14, R.sup.15, R.sup.21, R.sup.22, R.sup.23, R.sup.24, R.sup.25, R.sup.31; R.sup.32; R.sup.33 R.sup.34 and R.sup.35 are optionally connected to each other to form a ring structure; wherein one or more of R.sup.11, R.sup.12, R.sup.13, R.sup.14, R.sup.15, R.sup.21, R.sup.22, R.sup.23, R.sup.24, R.sup.25, R.sup.31, R.sup.32, R.sup.33, R.sup.34, and R.sup.35 is covalently bound to the polymer, and wherein A is an anion.

##STR00001##

To provide an organic photoelectronic element, of which the external quantum efficiency is improved, the power consumption is low and the service life is prolonged. The organic photoelectronic element comprises a substrate, an anode provided on the substrate, a cathode facing the anode, a light emitting layer disposed between the anode and the cathode, and a hole transport layer provided in contact with the light emitting layer between the light emitting layer and the anode, wherein the hole transport layer contains an organic semiconductor material and a fluorinated polymer, and at the surface of the hole transport layer in contact with the light emitting layer, the fluorinated polymer is present.

A display panel includes a display substrate, an opposite substrate, and a hydrophobic bonding portion disposed between the display substrate and the opposite substrate. The hydrophobic bonding portion is configured to bond the display substrate and the opposite substrate together, and an orthographic projection of the hydrophobic bonding portion on the display substrate is located outside a display region of the display substrate.

Display panel stack-up structures are described. In an embodiment, a display panel includes a substrate, a light source, and a multiple layer thin film encapsulation over the light source. In an embodiment, the display panel additionally includes an anti-reflection layer over the light source. In an embodiment, an incoherence layer is located within the thin film encapsulation.

An organic light-emitting device and a display panel are provided. The organic light-emitting device has an anode, a cathode opposite to the anode, and a light-emitting layer between the anode and the cathode. The light-emitting layer has a host material, a light-emitting guest, and an auxiliary guest, wherein the light-emitting guest is a fluorescent dye, and the auxiliary guest is an organic substance having a thermally activated delayed fluorescence property, wherein a section in which a doping concentration of the auxiliary guest gradually increases or gradually decreases is present along a direction from the anode toward the cathode.

Direct pixel-by-pixel phase engineering in a SLM is an effective method for the holographic fabrication of graded photonic super-quasi-crystals with desired disorder and graded photonic super-crystals with rectangular unit-cells. Multiple levels of filling fractions of dielectric in the crystal have been created in the graded regions. Fabrication of these graded photonic super-crystals and super-quasi-crystals with small feature size is possible, using a laser projection system consisting of integrated spatial light modulator and reflective optical element.