An active matrix substrate includes a plurality of first contact holes extending through an inorganic insulating film, a first protection layer that is a silicon nitride film, and a second protection layer, a plurality of second contact holes extending through the inorganic insulating film and the second protection layer, a first transistor, and a second transistor. A channel region of the second transistor does not overlap the first protection layer.

An electroluminescent display device comprises a substrate, a first electrode on the substrate, a connection pattern on the substrate and spaced apart from the first electrode, a bank covering edges of the first electrode and the connection pattern, a light-emitting layer on the first electrode, and a second electrode on the light-emitting layer, the bank and the connection pattern, wherein the connection pattern includes at least one protrusion part and a flat part, and wherein each of the first electrode and the connection pattern includes a first layer and a second layer, the second layer is disposed between the substrate and the first layer, and the second layer of the connection pattern has the at least one protrusion part.

Provided is an organic EL display device including a resin substrate layer, a TFT layer provided on the resin substrate layer, and a light-emitting element that is provided on the TFT layer and constitutes a display region. The resin substrate layer includes a first resin layer, an inorganic layer, and a second resin layer, which are provided in that order from a side opposite to the TFT layer. The interior of the first resin layer contains a plurality of air bubbles.

A flexible organic EL display device includes a plurality of short ring wiring lines. Each of the plurality of short ring wiring lines contacts a flattening film that is a resin layer on an end face of a terminal portion region in the flexible organic EL display device.

In a display region, etching stopper layers are provided between a plurality of inorganic insulating films, openings are formed in the inorganic insulating films located closer to a light-emitting element than the etching stopper layers so as to expose the upper surfaces of the etching stopper layers, and flattening films are provided in the openings such that the openings are filed with the flattening films.

A display device includes a substrate, a first semiconductor layer on the substrate, a first gate insulating film on the first semiconductor layer, a first conductive layer on the first gate insulating film and including a first gate electrode and a first electrode of a capacitor connected to the first gate electrode, a second semiconductor layer on the first gate insulating film and at a different layer from the first semiconductor layer, a second gate insulating film on the first conductive layer and the second semiconductor layer, a second conductive layer on the second gate insulating film and including a second gate electrode and a second electrode of the capacitor, a second interlayer insulating film on the second conductive layer, and a third conductive layer on the second interlayer insulating film and including a first source electrode, a first drain electrode, a second source electrode, and a second drain electrode.

The disclosure provides a display panel and a method of manufacturing same. In the display panel, an organic light-emitting structural layer and an encapsulating structural layer are formed on a pixel defining layer and covers an entire surface of a through hole. The through hole is defined before the organic light-emitting structural layer and the encapsulating structural layer covers the surface of the through hole. Therefore, the encapsulating structural layer covers an interior lateral wall of the through hole, which prevents atmospheric moisture from invading into gaps between layers of an OLED device from the through hole and eroding a metal layer and an organic light-emitting layer in a display region.

The present application provides a display panel including a light emitting layer and a touch layer; wherein the light emitting layer comprises a plurality of blue light emitting units, a plurality of green light emitting units, and a plurality of red light emitting units; wherein a top of the touch layer is provided with a transparent cover plate, the transparent cover plate is provided with a light enhancement region, and a projection of the light enhancement region on the light emitting layer covers the blue light emitting units.

The disclosure provides a display backplane, a method of manufacturing the same, and a display device using the same. The display backplane includes a substrate; a thin film transistor structure layer disposed on one side of the substrate and including thin film transistors, a gate insulating layer, and an interlayer dielectric layer, where an etching rate of the interlayer dielectric layer carried out under an HF atmosphere condition is less than 2 Å/S; and photosensitive devices spaced apart from the thin film transistor structure layer and disposed on one side of the thin film transistor structure layer away from the substrate. The interlayer dielectric layer has a high compactness, and can effectively block H from entering the active layer of the thin film transistor to conductorize the active layer, thus guaranteeing good optical characteristics of the thin film transistor while carrying out optical compensation.

A method of manufacturing a display device includes: providing a first substrate, a second substrate, and a plurality of connection lines, wherein the first substrate has a base substrate, wherein the second substrate faces the first substrate, and wherein the plurality of connection lines are disposed between the base substrate and the second substrate; grinding a side surface of the base substrate, a side surface of the second substrate, and side surfaces of the plurality of connection lines; and simultaneously transferring a conductive film and laser-curing the conductive film, wherein the conductive film is transferred to the ground side surface of the base substrate, the ground side surface of the second substrate, and the ground side surfaces of the plurality of connection lines.