A heat spreading material is integrated into a composite die structure including a first IC die having a first dielectric material and a first electrical interconnect structure, and a second IC die having a second dielectric material and a second electrical interconnect structure. The composite die structure may include a composite electrical interconnect structure comprising the first interconnect structure in direct contact with the second interconnect structure at a bond interface. The heat spreading material may be within at least a portion of a dielectric area through which the bond interface extends. The heat spreading material may be located within one or more dielectric materials surrounding the composite interconnect structure, and direct a flow of heat generated by one or more of the first and second IC dies.

A method of forming a three dimensional semiconductor structure includes: forming a through dielectric via extending on a first surface of a first interlayer dielectric layer of a first device; bonding the first device and a second device by the first surface and a second surface of the second device such that a through silicon contact pad on the second surface covers the through dielectric via; performing an etching process on a back side of a first substrate of the first device opposite to the first interlayer dielectric layer to simultaneously form a first via hole and a second via hole and exposing the second via hole through the through silicon contact pad; and forming a first via plug to fill the first via hole, and a second via plug to fill the second via hole and the through dielectric via.

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a first semiconductor structure and a first connecting structure, wherein the first connecting structure includes a first connecting insulating layer positioned on the first semiconductor structure, two first conductive layers positioned in the first connecting insulating layer, and a first porous layer positioned between the two first conductive layers. A porosity of the first porous layer is between about 25% and about 100%.

A heat spreading material is integrated into a composite die structure including a first IC die having a first dielectric material and a first electrical interconnect structure, and a second IC die having a second dielectric material and a second electrical interconnect structure. The composite die structure may include a composite electrical interconnect structure comprising the first interconnect structure in direct contact with the second interconnect structure at a bond interface. The heat spreading material may be within at least a portion of a dielectric area through which the bond interface extends. The heat spreading material may be located within one or more dielectric materials surrounding the composite interconnect structure, and direct a flow of heat generated by one or more of the first and second IC dies.

The present disclosure provides a semiconductor device including a first semiconductor structure, a first connecting structure positioned on the first semiconductor structure, a second connecting structure positioned on the first connecting structure, and a second semiconductor structure positioned on the second connecting structure. The first connecting structure includes a plurality of first connecting contacts and a plurality of first supporting contacts positioned in a first connecting insulating layer. The second connecting structure includes a plurality of second connecting contacts and a plurality of second supporting contacts positioned in the second connecting insulating layer positioned on the first connecting structure. The plurality of first connecting contacts contact the plurality of second connecting contacts, forming signal-transmitting contacts. The plurality of first supporting contacts contact the plurality of second supporting contacts, forming electrically floating contacts for implementing electro-magnetic interference shielding between the signal-transmitting contacts.

A method of forming a semiconductor structure includes forming first semiconductor devices over a first substrate, forming a first dielectric material layer over the first semiconductor devices, forming vertical recesses in the first dielectric material layer, such that each of the vertical recesses vertically extends from a topmost surface of the first dielectric material layer toward the first substrate, forming silicon nitride material portions in each of the vertical recesses; and locally irradiating a second subset of the silicon nitride material portions with a laser beam. A first subset of the silicon nitride material portions that is not irradiated with the laser beam includes first silicon nitride material portions that apply tensile stress to respective surrounding material portions, and the second subset of the silicon nitride material portions that is irradiated with the laser beam includes second silicon nitride material portions that apply compressive stress to respective surrounding material portions.

A heat spreading material is integrated into a composite die structure including a first IC die having a first dielectric material and a first electrical interconnect structure, and a second IC die having a second dielectric material and a second electrical interconnect structure. The composite die structure may include a composite electrical interconnect structure comprising the first interconnect structure in direct contact with the second interconnect structure at a bond interface. The heat spreading material may be within at least a portion of a dielectric area through which the bond interface extends. The heat spreading material may be located within one or more dielectric materials surrounding the composite interconnect structure, and direct a flow of heat generated by one or more of the first and second IC dies.

The present disclosure relates to a microelectronics package with a vertically stacked structure of a microelectromechanical systems (MEMS) device and a controller device. The MEMS device includes a MEMS component, a MEMS through-via, and a MEMS connecting layer configured to electrically connect the MEMS component with the MEMS through-via. The controller device includes a controlling component, a controller through-via, and a controller connecting layer configured to electrically connect the controlling component with the controller through-via. The controller through-via is in contact with the MEMS through-via, such that the controlling component in the controller device is configured to control the MEMS component in the MEMS device.

Representative implementations of techniques and devices are used to reduce or prevent conductive material diffusion into insulating or dielectric material of bonded substrates. Misaligned conductive structures can come into direct contact with a dielectric portion of the substrates due to overlap, especially while employing direct bonding techniques. A barrier interface that can inhibit the diffusion is disposed generally between the conductive material and the dielectric at the overlap.

A semiconductor structure and a method of manufacturing the same are provided. The semiconductor structure includes a first semiconductor element and a first bonding structure. The first semiconductor element has a first element top surface and a first element bottom surface opposite to the element top surface. The first bonding structure is disposed adjacent to the element top surface of the first semiconductor element and includes a first electrical connector, a first insulation layer surrounding the first electrical connector, and a first metal layer surrounding the first insulation layer.