Embodiments of semiconductor devices and fabrication methods thereof are disclosed. In an example, a method for forming a semiconductor device is provided. The method includes the following operations. In a first semiconductor structure, a first bonding layer is formed having a first dielectric layer and a plurality of protruding contact structures. In a second semiconductor structure, a second bonding layer is formed having a second dielectric layer and a plurality of recess contact structures. The plurality of protruding contact structures are bonded with the plurality of recess contact structures such that each of the plurality of protruding contacts is in contact with a respective recess contact structure.

The present application discloses a method for fabricating a semiconductor device with a protection structure for suppressing electromagnetic interference and air gaps for reducing parasitic capacitance. The method includes providing a first semiconductor die, forming a connecting dielectric layer above the first semiconductor die, forming a first trench in the connecting dielectric layer, forming a plurality of sacrificial spacers on sides of the first trench, forming a first protection structure in the first trench, and performing an energy treatment to turn the plurality of sacrificial spacers into a plurality of air gaps. The plurality of sacrificial spacers are formed of an energy-removable material and the first protection structure is formed of copper, aluminum, titanium, tungsten, or cobalt.

Examples herein include die to metallization structure connections that eliminate the solder joint to reduce the resistance and noise on the connection. In one example, a first die is attached to a metallization layer by a plurality of copper interconnections and a second is attached to the metallization layer opposite the first die through another plurality of copper interconnections. In this example, the copper interconnects may connect the respective die to a metallization structure in the metallization layer.

A semiconductor device includes a first structure including a first bonding structure, and a second structure on the first structure and including a second bonding structure connected to the first bonding structure. The first bonding structure includes a first insulating layer, a first bonding insulating layer on the first insulating layer, first bonding pads penetrating at least a portion of the first insulating layer and the first bonding insulating layer, and first metal patterns in the first insulating layer and in contact with the first bonding insulating layer, and having an upper surface at a lower level than upper surfaces of the first bonding pads. The second bonding structure includes a second bonding insulating layer bonded to the first bonding insulating layer, a second insulating layer on the second bonding insulating layer, and second bonding pads penetrating the second bonding insulating layer and connected to the first bonding pads.

The present application provides a semiconductor package with air gaps for reducing capacitive coupling between conductive features and a method for manufacturing the semiconductor package. The semiconductor package includes a first semiconductor structure and a second semiconductor structure bonded with the first semiconductor structure. The first semiconductor structure has a first bonding surface. The second semiconductor structure has a second bonding surface partially in contact with the first bonding surface. A portion of the first bonding surface is separated from a portion of the second bonding surface, a space between the portions of the first and second bonding surfaces is sealed and forms an air gap in the semiconductor package.

The present application provides a semiconductor package with air gaps for reducing capacitive coupling between conductive features and a method for manufacturing the semiconductor package. The semiconductor package includes a first semiconductor structure and a second semiconductor structure bonded with the first semiconductor structure. The first semiconductor structure has a first bonding surface. The second semiconductor structure has a second bonding surface partially in contact with the first bonding surface. A portion of the first bonding surface is separated from a portion of the second bonding surface, a space between the portions to of the first and second bonding surfaces is sealed and forms an air gap in the semiconductor package.

A semiconductor device includes a first semiconductor chip that includes a first conductive pad whose top surface is exposed; and a second semiconductor chip that includes a second conductive pad whose top surface is exposed and in contact with at least a portion of the top surface of the first conductive pad. The first semiconductor chip may include a first diffusion barrier in contact with a bottom surface of the first conductive pad, and a second diffusion barrier in contact with a lateral surface of the first conductive pad, and the first diffusion barrier and the second diffusion barrier may include different materials from each other.

A method for manufacturing a semiconductor device is provided, including: preparing a first chip forming portion having a first semiconductor substrate, first metal pads provided at the substrate and a first circuit electrically connected to at least a part of the pads, and a second chip forming portion having a second semiconductor substrate, second metal pads provided at substrate and a second circuit electrically connected to at least a part of the pads; bonding the first and the second chip forming portions while joining the first and the second pads to form a bonding substrate having a non-bonded region between the first and the second chip forming portions at an outer peripheral portion thereof; and filling an insulating film into the non-bonded region, at least a part of the insulating film containing at least one selected from the group consisting of silicon nitride and nitrogen-containing silicon carbide.

A semiconductor device according to an embodiment includes: a bonding substrate which includes a first chip forming portion having first metal pads provided at a semiconductor substrate and a first circuit connected to the first metal pads, and a second chip forming portion having second metal pads joined to the first metal pads and a second circuit connected to the second metal pads and being bonded to the first chip forming portion; and an insulating film which is filled into a non-bonded region between the first chip forming portion and the second chip forming portion at an outer peripheral portion of the bonding substrate. At least a part of the insulating film contains at least one selected from the group consisting of silicon nitride and nitrogen-containing silicon carbide.

Representative implementations of techniques and devices are used to reduce or prevent conductive material diffusion into insulating or dielectric material of bonded substrates. Misaligned conductive structures can come into direct contact with a dielectric portion of the substrates due to overlap, especially while employing direct bonding techniques. A barrier interface that can inhibit the diffusion is disposed generally between the conductive material and the dielectric at the overlap.