An electrode surface of a horizontal semiconductor chip and a substrate are joined together through a plurality of first joint portions including a plurality of joint portions at which a plurality of electrodes formed on the electrode surface are joined to the substrate. A no-electrode surface of the horizontal semiconductor chip and a heatsink are joined together through a second joint portion at which the no-electrode surface and the heatsink are joined together. In a plan view from a direction normal to a principal surface of the substrate, when a region inside the outline of the rough shape of an aggregate of the first joint portions is a first joint region and a region inside the outline of the second joint portion is a second joint region, the first joint region and the second joint region are the same in position, shape, and size.

A method for producing a sinter layer connection between a substrate and a chip resulting in an electric and thermal connection therebetween and in reduced mechanical tensions within the chip. The method produces a sinter layer by applying a multitude of sinter elements of a base material forming the sinter layer in structured manner on a contact area of a main surface of a substrate; placing a chip to be joined to the substrate on the sinter elements; and heating and compressing the sinter elements to produce a structured sinter layer connecting the substrate and chip and extending within the contact area, the surface coverage density of the sinter elements on the substrate in a center region of the contact area being greater than the surface coverage density of the sinter elements in an edge region of the contact area, and at least one through channel, extending laterally as to the substrate's main surface being provided towards the contact area's edge. A large-area sinter element is situated in the contact area's center region, and circular sinter elements is situated in a contact area edge region. The sinter elements may also have notches. Also described is a related device.

Structures and methods are disclosed for fabricating optoelectronic solid state array devices. In one case a backplane and array of micro devices is aligned and connected through bumps.

Some embodiments relate to an electronic package. The electronic package includes a first die and a second die stacked onto the first die. A first encapsulant is positioned between the first die and the second die. The first encapsulant includes a first material that covers a first volume between the first die and the second die. A second encapsulant is positioned between the first die and the second die. The second encapsulant includes a second material that covers a second volume between the first die and the second die. The first material has a higher thermal conductivity than the second material, and the second material more effectively promotes electrical connections between the first die and the second die as compared to the first material.

Embodiments described herein provide for a pH sensor that comprises a substrate and an ion sensitive field effect transistor (ISFET) die. The ISFET die includes an ion sensing part that is configured to be exposed to a medium such that it outputs a signal related to the pH level of the medium. The ISFET die is bonded to the substrate with at least one composition of bonding agent material disposed between the ISFET die and the substrate. One or more strips of the at least one composition of bonding agent material is disposed between the substrate and the ISFET die in a first pattern.

In a method for fabricating a semiconductor, a first conductive pattern structure partially protruding upwardly from first insulating interlayer is formed in first insulating interlayer. A first bonding insulation layer pattern covering the protruding portion of first conductive pattern structure is formed on first insulating interlayer. A first adhesive pattern containing a polymer is formed on first bonding insulation layer pattern to fill a first recess formed on first bonding insulation layer pattern. A second bonding insulation layer pattern covering the protruding portion of second conductive pattern structure is formed on second insulating interlayer. A second adhesive pattern containing a polymer is formed on second bonding insulation layer pattern to fill a second recess formed on second bonding insulation layer pattern. The first and second adhesive patterns are melted. The first and second substrates are bonded with each other so that the conductive pattern structures contact each other.

A wafer level method of making a micro-electronic and/or micro-mechanic device, having a capping with electrical wafer through connections (vias), comprising the steps of providing a first wafer of a semiconductor material having a first and a second side and a plurality of holes and/or recesses in the first side, and a barrier structure extending over the wafer on the second side, said barrier comprising an inner layer an insulating material, such as oxide, and an outer layer of another material. Then, metal is applied in said holes so as to cover the walls in the holes and the bottom of the holes. The barrier structure is removed and contacts are provided to the wafer through connections on the back-side of the wafer. Bonding structures are provided on either of said first side or the second side of the wafer. The wafer is bonded to another wafer carrying electronic and micro-electronic/mechanic components, such that the first wafer forms a capping structure covering the second wafer. Finally the wafer is singulated to individual devices.

A semiconductor device has a pre-molded discrete electrical component and a first encapsulant deposited over the pre-molded discrete electrical component. A first conductive layer is formed over the first encapsulant and pre-molded discrete electrical component. An electrical component is disposed over the first conductive layer. A second encapsulant is deposited over the electrical component and first conductive layer. A second conductive layer is formed over the second encapsulant. A conductive pillar is formed between the first conductive layer and second conductive layer through the second encapsulant. The pre-molded discrete electrical component has a discrete component and a third encapsulant deposited around the discrete component. The discrete component has an electrical terminal, a finish formed over the electrical terminal, and a third conductive layer formed over the finish. An interconnect structure formed on the electrical component is oriented toward the first conductive layer or the second conductive layer.

A chip package structure is provided. The chip package structure includes a carrier substrate. The chip package structure includes a chip structure over the carrier substrate. The chip structure includes a semiconductor substrate and a device layer, the semiconductor substrate has a front surface and a back surface opposite to the front surface, the front surface faces the carrier substrate, and the device layer is between the front surface and the carrier substrate. The chip package structure includes a heat dissipation lid over the back surface of the semiconductor substrate. The heat dissipation lid has a plate portion and a first protruding portion under the plate portion, and the first protruding portion extends into the semiconductor substrate from the back surface.

A power semiconductor having a power semiconductor switch. The power semiconductor switch is cuboidal and has a switching path terminal on one side, a further switching path terminal on a side opposite thereto, and a control terminal for switching the power semiconductor switch. The control terminal is formed at a distance from the switching path terminal, on the side of the switching path terminal. The power semiconductor has a control contact element, connected to the control terminal, for the control terminal, a contact element connected to the switching path terminal, and a molded housing. A part of the surface is covered by the molding compound. An outward-facing contact surface of the contact elements can be contacted from the outside. The power semiconductor switch has a further switching path terminal which can be contacted from the outside directly.